Search Results (1,315)

In high energy density physics, the demand for precise detection of nanosecond-level fast physical processes is high. Ga:ZnO (GZO), GaN, and other fast scintillators are widely used in pulsed signal detection. However, many of them, especially wide-bandgap materials, still face issues of low luminous intensity and significant self-absorption. Therefore, an enhanced method was proposed to tune the wavelength of materials via coating perovskite quantum dot (QD) films. Three-layer samples based on GZO were primarily investigated and characterized. Radioluminescence (RL) spectra from each face of the samples, as well as their decay times, were obtained. Lower temperatures further enhanced the luminous intensity of the samples. Its overall luminous intensity increased by 2.7 times at 60 K compared to room temperature. The changes in the RL processes caused by perovskite QD and low temperatures were discussed using the light tuning and transporting model. In addition, an experiment under a pico-second electron beam was conducted to verify their pulse response and decay time. Accordingly, the samples were successfully applied in beam state monitoring of nanosecond pulsed proton beams, which indicates that GZO wafer coating with perovskite QD films has broad application prospects in pulsed radiation detection. Full article

Laser annealing of oxide functional thin films makes them compatible with substrates of various types, especially flexible materials. The effects of optical annealing on Ni-doped ZnO thin films were the subject of investigation and analysis in this study. Using pulsed laser deposition, we deposited polycrystalline ZnNiO films on sapphire and silicon substrates. The deposited film was annealed by laser heating. A continuous CO₂ laser was used for this purpose. The uniformly distributed long-wavelength radiation of the CO₂ laser can penetrate deeper from the surface of the thin film compared to short-wavelength lasers such as UV and IR lasers. After growth, optical post-annealing processes were applied to improve the conductive properties of the films. The crystallinity and surface morphology of the grown films and annealed films were analyzed using SEM, and their electrical parameters were evaluated using van der Pauw effect measurements. We used electrical conductivity measurements and investigated the photovoltaic properties of the ZnNiO film. After CO₂ laser annealing, changes in both the crystalline structure and surface appearance of ZnO were evident. Subsequent to laser annealing, the crystallinity of ZnO showed both change and degradation. High-power CO₂ laser annealing changed the structure to a mixed grain size. Surface nanostructuring occurred. This was confirmed by SEM morphological studies. After irradiation, the electrical conductivity of the films increased from 0.06 Sm/cm to 0.31 Sm/cm. The lifetime of non-equilibrium charge carriers decreased from 2.0·10⁻⁹ s to 1.2·10⁻⁹ s. Full article

The flexible transparent conductive films (TCFs) of a ZnS/Cu/Ag/TiO₂ multilayered structure were deposited on a flexible PET substrate with high surface roughness using magnetic sputtering, and the effects of structural characteristics on the performance of the films were analyzed. The TCFs with TiO₂/Cu/Ag/TiO₂ and ZnS/Cu/Ag/ZnS symmetric structures were also prepared for comparison. The TCF samples were deposited using ZnS, TiO₂, Cu and Ag targets, and they were analyzed using scanning electronic microscopy, atomic force microscopy, grazing incidence X-ray diffraction, spectrophotometry and a four-probe tester. The TCFs exhibit generally uniform surface morphology, excellent light transmittance and electrical conductivity with optimized structure. The optimal values are 84.40%, 5.52 Ω/sq and 33.19 × 10⁻³ Ω⁻¹ for the transmittance, sheet resistance and figure of merit, respectively, in the visible spectrum. The satisfactory properties of the asymmetric multilayered TCF deposited on a rough-surface substrate should be mainly attributed to the optimized structure parameters and reasonable interfacial compatibilities. Full article

Recently, with the development of automation technology in various fields, much research has been conducted on infrared photodetectors, which are the core technology of LiDAR sensors. However, most infrared photodetectors are expensive because they use compound semiconductors based on epitaxial processes, and they have low safety because they use the near-infrared (NIR) region that can damage the retina. Therefore, they are difficult to apply to automation technologies such as automobiles and factories where humans can be constantly exposed. In contrast, short-wavelength infrared photodetectors based on PbS QDs are actively being developed because they can absorb infrared rays in the eye-safe region by controlling the particle size of QDs and can be easily and inexpensively manufactured through a solution process. However, PbS QDs-based SWIR photodetectors have low chemical stability due to the electron/hole extraction layer processed by the solution process, making it difficult to manufacture them in the form of patterning and arrays. In this study, bulk NiO and ZnO were deposited by sputtering to achieve uniformity and patterning of thin films, and the performance of PbS QDs-based photodetectors was improved by optimizing the thickness and annealing conditions of the thin films. The fabricated photodetector achieved a high response characteristic of 114.3% through optimized band gap and improved transmittance characteristics. Full article

Fruit and vegetable production is often impacted by microbial pathogens that compromise the quality of produce and lead to significant economic losses at the postharvest stages. Due to their efficacy, agrochemicals are widely applied in disease management; nevertheless, this practice has led to the appearance of microbial strains resistant to these types of agrochemicals. Additionally, there is growing concern among consumers about the presence of these chemical residues in fruits and the negative impacts they cause on multiple ecosystems. In response, there is a growing need for safe, effective, green, and sustainable disease control technologies. Bionanocomposites, with their unique ability to combine nanomaterials and biopolymers that have attractive properties, represents a promising alternative for postharvest disease control. These technologies allow for the development of functional coatings and films with antimicrobial, antioxidant, and barrier properties, which are critical for extending shelf life and preserving fruit quality. Recent advances have demonstrated that integrating nanoparticles, such as ZnO, TiO₂, Ag, and chitosan-based nanosystems, into biopolymeric matrices, like alginate, pectin, starch, or cellulose, can enhance mechanical strength, regulate gas exchange, and control the release of active agents. This review presents systematized information that is focused on the creation of coatings and films based on bionanocomposites for the management of disease in fruits and vegetables. It also discusses the use of diverse biopolymers and nanomaterials and their impact on the quality and shelf life of fruits and vegetables. Full article

Excessive levels of Pb²⁺ and Cd²⁺ in seawater pose significant combined toxicity to marine organisms, resulting in harmful effects and further threatening human health through biomagnification in the food chain. Traditional methods for detecting marine Pb²⁺ and Cd²⁺ rely on laboratory analyses, which are hindered by limitations such as sample degradation during transport and complex operational procedures. In this study, we present an electrochemical sensor based on intelligent mobile detection devices. By combining G-COOH-MWCNTs/ZnO with differential pulse voltammetry, the sensor enables the efficient, simultaneous detection of Pb²⁺ and Cd²⁺ in seawater. The G-COOH-MWCNTs/ZnO composite film is prepared via drop-coating and is applied to a glassy carbon electrode. The film is characterized using cyclic voltammetry, electrochemical impedance spectroscopy, and scanning electron microscopy, while Pb²⁺ and Cd²⁺ are quantified using differential pulse voltammetry. Using a 0.1 mol/L sodium acetate buffer (pH 5.5), a deposition potential of −1.1 V, and an accumulation time of 300 s, a strong linear correlation was observed between the peak response currents of Pb²⁺ and Cd²⁺ and their concentrations in the range of 25–450 µg/L. The detection limits were 0.535 µg/L for Pb²⁺ and 0.354 µg/L for Cd²⁺. The sensor was applied for the analysis of seawater samples from Maowei Sea, achieving recovery rates for Pb²⁺ ranging from 97.7% to 103%, and for Cd²⁺ from 97% to 106.1%. These results demonstrate that the sensor exhibits high sensitivity and stability, offering a reliable solution for the on-site monitoring of heavy metal contamination in marine environments. Full article

Magnesium-containing multi-principal element alloys (MPEAs) are promising for lightweight applications due to their low density, high specific strength, and biocompatibility. This study examines two Mg-Ti-Zn alloy compositions, equal molar MgTiZn (TZ) and Mg₄TiZn (4TZ), synthesized via ball milling followed by spark plasma sintering, focusing on their microstructures and corrosion behaviors. X-ray diffraction and transmission electron microscopy revealed the formation of intermetallic phases, including Ti₂Zn and Mg₂₁Zn₂₅ in TZ, while 4TZ exhibited a predominantly Mg-rich phase. Potentiodynamic polarization and immersion tests in 0.1 M NaCl solution showed that both alloys had good corrosion resistance, with values of 3.65 ± 0.65 µA/cm² for TZ and 4.58 ± 1.64 µA/cm² for 4TZ. This was attributed to the formation of a TiO₂-rich surface film in the TZ, as confirmed by X-ray photoelectron spectroscopy (XPS), which contributed to enhanced passivation and lower corrosion current density. Both alloys displayed high hardness, 5.5 ± 1.0 GPa for TZ and 5.1 ± 0.9 GPa for 4TZ, and high stiffness, with Young’s modulus values of 98.2 ± 11.2 GPa for TZ and 100.8 ± 9.6 GPa for 4TZ. These findings highlight the potential of incorporating Ti and Zn via mechanical alloying to improve the corrosion resistance of Mg-containing MPEAs and Mg-based alloys. Full article

The article suggests a simple one-step sol–gel method for synthesizing nanostructured zinc oxide films co-doped with copper and aluminum. It shows the possibility of forming hierarchical ZnO:Al:Cu nanostructures combining branches of different sizes and ranks and quasi-spherical fractal aggregates. It demonstrates the use of the synthesized samples as highly efficient photocatalysts providing the decomposition of toxic dyes (methyl orange) under the action of both ultraviolet radiation and visible light. It establishes the contribution of the average crystallite size, the proportion of zinc atoms in the crystalline phase, their nanostructure, as well as X-ray amorphous phases of copper and aluminum to the efficiency of the photocatalysis process. Full article

Gallium oxide (Ga₂O₃), as a wide-bandgap semiconductor material, is highly expected to find extensive applications in optoelectronic devices, high-power electronics, gas sensors, etc. However, the photoelectric properties of Ga₂O₃ still need to be improved before its devices become commercially viable. As is well known, doping is an effective method to modulate the various properties of semiconductor materials. In this study, Zn–N co-doped Ga₂O₃ films with various doping concentrations were grown in situ on sapphire substrates by atomic layer deposition (ALD) at 250 °C, followed by post-annealing at 900 °C. The post-annealed undoped Ga₂O₃ film showed a highly preferential orientation, whereas with the increase in Zn doping concentration, the preferential orientation of Ga₂O₃ films was deteriorated, turning it into an amorphous state. The surface roughness of the Ga₂O₃ thin films is largely affected by doping. As a result of post-annealing, the bandgaps of the Ga₂O₃ films can be modulated from 4.69 eV to 5.41 eV by controlling the Zn–N co-doping concentrations. When deposited under optimum conditions, high-quality Zn–N co-doped Ga₂O₃ films showed higher transmittance, a larger bandgap, and fewer defects compared with undoped ones. Full article

This study presents the influence of pH control agents and pH value on the physical properties of ZnO thin films obtained by chemical bath deposition. ZnO thin films were synthesized on glass substrates using precursor solutions of different pHs prepared from two bases: sodium hydroxide (NaOH) and ammonia (NH₃). The effect of pH values on the morphological, structural, and optical properties of ZnO thin films was investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), and UV–Visible spectroscopy. XRD results showed that all the synthesized ZnO thin films are polycrystalline and crystallize in a hexagonal wurtzite structure. The crystallite size, calculated using the Debye–Scherrer formula, varied from 10.50 nm to 11.69 nm for ZnO thin films obtained with NH₃ and from 20.79 nm to 27.76 nm for those obtained with NaOH. FTIR analysis confirmed the presence of functional groups. SEM images indicated that not only the base but also the pH affects the morphology of the films, giving rise to different granular shapes. Overall, the ZnO thin films obtained with NaOH looked more mesoporous compared to those obtained with NH₃. Optical characterization results showed that whatever the base used, the pH of the precursor solution affected the ZnO thin film transmittance. Films synthesized with NH₃ exhibited the best transmittance (80%) at pH 8.5, while the best transmittance (81%) of films synthesized with NaOH was obtained at pH 8 in the visible region. Based on optical and morphological properties, ZnO films obtained from NH₃ at pH 8.5 are found to be more suitable as photoanodes in dye-sensitized solar cells. Full article

This research examines the effect of annealing temperature on the growth orientation of zinc oxide (ZnO) nanorods and its subsequent influence on NO₂ gas sensing efficiency. Zinc oxide (ZnO) nanorods were synthesized using the chemical bath deposition method, followed by annealing at 300, 400, and 500 °C. Diffraction analysis confirmed that both non-annealed and annealed ZnO nanorods crystallize in a hexagonal wurtzite structure. However, increasing the annealing temperature shifts the growth orientation from the c-axis (002) toward the (100) and (101) directions. Microscopy images (FE-SEM) revealed a reduction in nanorod diameter as the annealing temperature increases. Optical characterization using UV–visible and photoluminescence spectroscopy indicated shifts in the band gap energy and emission properties. Contact angle measurements demonstrated the hydrophobic nature of the films. Gas sensing tests at 200 °C revealed that the ZnO thin film annealed at 400 °C achieved the highest NO₂ response of 5.88%. The study highlights the critical role of annealing in modifying the crystallinity, growth orientation, and defect states of ZnO thin films, ultimately enhancing their NO₂ detection capability. Full article

This study developed cholesteric liquid crystal broadband reflective films using zinc oxide nanoparticles (ZnO NPs) and homotriazine UV-absorbing dye (UV-1577) to enhance infrared shielding. Unlike benzotriazole-based UV absorber UV-327, which suffers from volatility and contamination, UV-1577 exhibits superior compatibility with liquid crystals, higher UV absorption efficiency, and enhanced processing stability due to its larger molecular structure. By synergizing UV-1577 with ZnO NPs, we achieved a gradient UV intensity distribution across the film thickness, inducing a pitch gradient that broadened the reflection bandwidth to 915 nm and surpassing the performance of previous systems using UV-327/ZnO NPs (<900 nm). We conducted a detailed examination of the factors influencing the reflective bandwidth. These included the UV-1577/ZnO NP ratio, the concentrations of the polymerizable monomer (RM257) and chiral dopant (R5011), along with polymerization temperature, UV irradiation intensity, and irradiation time. The resultant films demonstrated efficient ultraviolet shielding via the UV-1577/ZnO NPs collaboration and infrared shielding through the induced pitch gradient. This work presents a scalable strategy for energy-saving smart windows. Full article

We report the fabrication and characterization of Al-doped ZnO (AZO) optoelectronic synaptic devices based on sol–gel-derived thin films with varying Al concentrations (0~4.0 wt%). Structural and optical analyses reveal that moderate Al doping modulates the crystal orientation, optical bandgap, and defect levels of ZnO films. Notably, 2.0 wt% Al doping yields the widest bandgap (3.31 eV), stable PL emission, and uniform deep-level absorption without inducing significant lattice disorder. Synaptic performance, including learning–forgetting dynamics and persistent photoconductivity (PPC), is strongly dependent on Al concentration. The 2.0 wt% AZO device exhibits the lowest forgetting rate and longest memory retention due to optimized trap formation, particularly Al–oxygen vacancy complexes that enhance carrier lifetime. Visual memory simulations using a 3 × 3 pixel array under patterned UV illumination further confirm superior long-term memory (LTM) behavior at 2.0 wt%, with stronger excitatory postsynaptic current (EPSC) retention during repeated stimulation. These results demonstrate that precise doping control via the sol–gel method enables defect engineering in oxide-based neuromorphic devices. Our findings provide an effective strategy for designing low-cost, scalable optoelectronic synapses with tunable memory characteristics suitable for future in-sensor computing and neuromorphic vision systems. Full article

Artificial photoelectric synapses exhibit great potential for overcoming the Von Neumann bottleneck in computational systems. All-inorganic halide perovskites hold considerable promise in photoelectric synapses due to their superior photon-harvesting efficiency. In this study, a novel wavy-structured CsPbBr₃/ZnO hybrid film was realized by depositing zinc oxide (ZnO) onto island-like CsPbBr₃ film via atomic layer deposition (ALD) at 70 °C. Due to the capability of ALD to grow high-quality films over small surface areas, dense and thin ZnO film filled the gaps between the island-shaped CsPbBr₃ grains, thereby enabling reduced light-absorption losses and efficient charge transport between the CsPbBr₃ light absorber and the ZnO electron-transport layer. This ZnO/island-like CsPbBr₃ hybrid synaptic transistor could operate at a drain-source voltage of 1.0 V and a gate-source voltage of 0 V triggered by green light (500 nm) pulses with low light intensities of 0.035 mW/cm². The device exhibited a quiescent current of ~0.5 nA. Notably, after patterning, it achieved a significantly reduced off-state current of 10⁻¹¹ A and decreased the quiescent current to 0.02 nA. In addition, this transistor was able to mimic fundamental synaptic behaviors, including excitatory postsynaptic currents (EPSCs), paired-pulse facilitation (PPF), short-term to long-term plasticity (STP to LTP) transitions, and learning-experience behaviors. This straightforward strategy demonstrates the possibility of utilizing neuromorphic synaptic device applications under low voltage and weak light conditions. Full article

Kesterite (CZTS/CZTSSe) thin-film solar cells are considered an eco-friendly, earth-abundant, and low-cost photovoltaic technology that can fulfill our future energy needs. Due to its outstanding properties including tunable bandgap and high absorption coefficient, the power conversion efficiency (PCE) has reached over 14%. However, toxic cadmium sulfide (CdS) is commonly used as an n-type buffer layer in kesterite thin-film solar cells (KTFSCs) to form a better p–n junction with the p-type CZTS/CZTSSe absorber. In addition to its toxicity, the CdS buffer layer shows parasitic absorption at low wavelengths (400–500 nm) owing to its low bandgap (2.4 eV). For the last few years, several efforts have been made to substitute CdS with an eco-friendly, Cd-free, cost-effective buffer layer with alternative large-bandgap materials such as ZnSnO, Zn (O, S), In₂Se₃, ZnS, ZnMgO, and TiO₂, which showed significant advances. Herein, we summarize the key findings of the research community using a Cd-free buffer layer in KTFSCs to provide a current scenario for future work motivating researchers to design new materials and strategies to achieve higher performance. Full article