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Nanomaterials
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Nanoscale Photonics and Optoelectronics
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Nanoscale Photonics and Optoelectronics

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanophotonics Materials and Devices".

Deadline for manuscript submissions: 12 September 2025 | Viewed by 951

Special Issue Editors

Prof. Dr. Heyuan Guan

E-Mail Website
Guest Editor
Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Jinan University, Guangzhou 510632, China
Interests: metamaterial optoelectronic devices; subwavelength micro–nano grating devices; controllable structure thin-film devices; two-dimensional material optoelectronic devices
Dr. Tiefeng Yang

E-Mail Website
Guest Editor
Department of Optoelectronic Engineering, Jinan University, Guangzhou 510632, China
Interests: optoelectronic hybrid integration systems based on LiNbO3; exploration and manipulation of novel low-dimensional functional semiconductors; optoelectronic devices utilizing ferroelectric properties; micro-nano processing and integration techniques

Special Issue Information

Dear Colleagues,

Nanoscale photonics is an interdisciplinary subject that combines nanotechnology and photonics, mainly focusing on the manipulation, transmission, emission, and detection of light at the nanoscale. It explores how nanomaterials and nanostructures can be used to achieve novel optical properties and functions, such as enhanced light absorption and efficient luminescence. Optoelectronics focuses on the interconversion of light and electrons and the development and application of related devices. When combined with nanotechnology, the performance of optoelectronic devices can be further improved to achieve smaller sizes, higher efficiency, and better functions.

Nanophotonics provides new ideas and technical means for optoelectronics, and the practical demand of optoelectronics has also promoted nanophotonics research. The integration of nanoscale photonics, optoelectronics, and nanophotonics is crucial to the development of many fields, such as the information technology, energy, and biomedicine fields.

This Special Issue aims to collate and present recent research related to nanoscale photonics and optoelectronics, including but not limited to research on computational science and the synthesis, preparation, and applications of nanophotonic and optoelectronic devices. Both original research article and review papers are welcomed to this Special Issue.

We look forward to receiving your contributions.

Prof. Dr. Heyuan Guan
Dr. Tiefeng Yang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nanophotonics
  • metasurface
  • integrated nanoscale electronics and optoelectronics
  • photodetector
  • nanoscale devices
  • nanomaterials

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Published Papers (3 papers)

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Research

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11 pages, 2689 KiB  
Article
Growth of Zn–N Co-Doped Ga2O3 Films by a New Scheme with Enhanced Optical Properties
by Daogui Liao, Yijun Zhang, Ruikang Wang, Tianyi Yan, Chao Li, He Tian, Hong Wang, Zuo-Guang Ye, Wei Ren and Gang Niu
Nanomaterials 2025, 15(13), 1020; https://doi.org/10.3390/nano15131020 - 1 Jul 2025
Abstract
Gallium oxide (Ga2O3), as a wide-bandgap semiconductor material, is highly expected to find extensive applications in optoelectronic devices, high-power electronics, gas sensors, etc. However, the photoelectric properties of Ga2O3 still need to be improved before its [...] Read more.
Gallium oxide (Ga2O3), as a wide-bandgap semiconductor material, is highly expected to find extensive applications in optoelectronic devices, high-power electronics, gas sensors, etc. However, the photoelectric properties of Ga2O3 still need to be improved before its devices become commercially viable. As is well known, doping is an effective method to modulate the various properties of semiconductor materials. In this study, Zn–N co-doped Ga2O3 films with various doping concentrations were grown in situ on sapphire substrates by atomic layer deposition (ALD) at 250 °C, followed by post-annealing at 900 °C. The post-annealed undoped Ga2O3 film showed a highly preferential orientation, whereas with the increase in Zn doping concentration, the preferential orientation of Ga2O3 films was deteriorated, turning it into an amorphous state. The surface roughness of the Ga2O3 thin films is largely affected by doping. As a result of post-annealing, the bandgaps of the Ga2O3 films can be modulated from 4.69 eV to 5.41 eV by controlling the Zn–N co-doping concentrations. When deposited under optimum conditions, high-quality Zn–N co-doped Ga2O3 films showed higher transmittance, a larger bandgap, and fewer defects compared with undoped ones. Full article
(This article belongs to the Special Issue Nanoscale Photonics and Optoelectronics)
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12 pages, 8647 KiB  
Article
Generation of Higher-Order Poincaré Beams with Polarization States Varying Along the Propagation Direction Based on Dielectric Metasurfaces
by Kaixin Zhao, Teng Ma, Manna Gu, Qingrui Dong, Haoyan Zhou, Yuantao Wang, Wenxin Wang, Chuanfu Cheng and Chunxiang Liu
Nanomaterials 2025, 15(7), 478; https://doi.org/10.3390/nano15070478 - 22 Mar 2025
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Abstract
Vector beams (VBs) with longitudinally varying polarization states provide a new dimension for light field manipulation, and promote the advancements of related areas such as optical metrology, longitudinal depth detection, and classical and quantum communications. In this study, we propose a half-wave plate [...] Read more.
Vector beams (VBs) with longitudinally varying polarization states provide a new dimension for light field manipulation, and promote the advancements of related areas such as optical metrology, longitudinal depth detection, and classical and quantum communications. In this study, we propose a half-wave plate dielectric metasurface based on a spatial partitioning method, realizing the longitudinal manipulation of the polarization states of higher-order Poincaré (HOP) beams by changing the elliptical polarization state of the incident light and selecting the appropriate propagation distances. The metasurface is composed of two sub-metasurfaces, and the two sets of a-Si:H meta-atoms are uniformly arranged on concentric rings of different radii with an equal interval. The propagation and Pancharatnam–Berry phases are utilized to construct the axicon and helical phase profiles. As a result, two sub-metasurfaces, respectively, generate the first- and second-order VBs with longitudinally varying polarization states. The polarization states of generated VBs correspond to points on different meridians of nth-order HOP spheres from the south pole to the north pole. The consistency between the theoretical and simulated results demonstrates the feasibility and practicability of the proposed method. This study provides an innovative strategy to extend the modulation of light fields from two-dimensional to three-dimensional space. Full article
(This article belongs to the Special Issue Nanoscale Photonics and Optoelectronics)
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Review

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26 pages, 3149 KiB  
Review
Research Progress and Future Perspectives on Photonic and Optoelectronic Devices Based on p-Type Boron-Doped Diamond/n-Type Titanium Dioxide Heterojunctions: A Mini Review
by Shunhao Ge, Dandan Sang, Changxing Li, Yarong Shi, Qinglin Wang and Dao Xiao
Nanomaterials 2025, 15(13), 1003; https://doi.org/10.3390/nano15131003 - 29 Jun 2025
Viewed by 175
Abstract
Titanium dioxide (TiO2) is a wide-bandgap semiconductor material with broad application potential, known for its excellent photocatalytic performance, high chemical stability, low cost, and non-toxicity. These properties make it highly attractive for applications in photovoltaic energy, environmental remediation, and optoelectronic devices. [...] Read more.
Titanium dioxide (TiO2) is a wide-bandgap semiconductor material with broad application potential, known for its excellent photocatalytic performance, high chemical stability, low cost, and non-toxicity. These properties make it highly attractive for applications in photovoltaic energy, environmental remediation, and optoelectronic devices. For instance, TiO2 is widely used as a photocatalyst for hydrogen production via water splitting and for degrading organic pollutants, thanks to its efficient photo-generated electron–hole separation. Additionally, TiO2 exhibits remarkable performance in dye-sensitized solar cells and photodetectors, providing critical support for advancements in green energy and photoelectric conversion technologies. Boron-doped diamond (BDD) is renowned for its exceptional electrical conductivity, high hardness, wide electrochemical window, and outstanding chemical inertness. These unique characteristics enable its extensive use in fields such as electrochemical analysis, electrocatalysis, sensors, and biomedicine. For example, BDD electrodes exhibit high sensitivity and stability in detecting trace chemicals and pollutants, while also demonstrating excellent performance in electrocatalytic water splitting and industrial wastewater treatment. Its chemical stability and biocompatibility make it an ideal material for biosensors and implantable devices. Research indicates that the combination of TiO2 nanostructures and BDD into heterostructures can exhibit unexpected optical and electrical performance and transport behavior, opening up new possibilities for photoluminescence and rectifier diode devices. However, applications based on this heterostructure still face challenges, particularly in terms of photodetector, photoelectric emitter, optical modulator, and optical fiber devices under high-temperature conditions. This article explores the potential and prospects of their combined heterostructures in the field of optoelectronic devices such as photodetector, light emitting diode (LED), memory, field effect transistor (FET) and sensing. TiO2/BDD heterojunction can enhance photoresponsivity and extend the spectral detection range which enables stability in high-temperature and harsh environments due to BDD’s thermal conductivity. This article proposes future research directions and prospects to facilitate the development of TiO2 nanostructured materials and BDD-based heterostructures, providing a foundation for enhancing photoresponsivity and extending the spectral detection range enables stability in high-temperature and high-frequency optoelectronic devices field. Further research and exploration of optoelectronic devices based on TiO2-BDD heterostructures hold significant importance, offering new breakthroughs and innovations for the future development of optoelectronic technology. Full article
(This article belongs to the Special Issue Nanoscale Photonics and Optoelectronics)
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