Quantum Dot Materials and Their Optoelectronic Applications

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanophotonics Materials and Devices".

Deadline for manuscript submissions: 15 September 2025 | Viewed by 429

Special Issue Editors


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Guest Editor
School of Physics, Northwest University, Xi’an 710127, China
Interests: quantum dot solar cell; nanomaterials; photodectector
Special Issues, Collections and Topics in MDPI journals
College of Materials Science and Chemical Engineering, Qingdao Innovation and Development Base of Harbin Engineering University, Harbin Engineering University, Harbin 150001, China
Interests: quantum dot solar cells; perovskite solar cells; electrochromic device; organic and inorganic optical materials; charge dynamics
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Quantum dots (QDs) have been attracting immense attention recently owing to their quantum-size effect bandgap tunability from the visible to infrared range, strong absorption with a high molar extinction coefficient, and new phenomena, such as multiple exciton generation (MEG) and low-cost solution processability. This makes QDs promising in various applications, for instance, light-emitting diodes (LEDs), photodetectors, and solar cells. The present Special Issue is the continuation of the previous one and aims to collect further studies and results about the novel synthesis and passivation methods of QD materials, the new progress of QD-based optoelectronic applications, and the charge dynamics in those devices.

Prof. Dr. Yaohong Zhang
Dr. Guohua Wu
Guest Editors

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Keywords

  • quantum dot
  • solar cells
  • light-emitting diode
  • photodetector
  • passivation
  • charge dynamics

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Published Papers (1 paper)

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Research

21 pages, 9529 KiB  
Article
Development of a Highly Reliable PbS QDs-Based SWIR Photodetector Based on Metal Oxide Electron/Hole Extraction Layer Formation Conditions
by JinBeom Kwon, Yuntae Ha, Suji Choi and Donggeon Jung
Nanomaterials 2025, 15(14), 1107; https://doi.org/10.3390/nano15141107 - 16 Jul 2025
Viewed by 247
Abstract
Recently, with the development of automation technology in various fields, much research has been conducted on infrared photodetectors, which are the core technology of LiDAR sensors. However, most infrared photodetectors are expensive because they use compound semiconductors based on epitaxial processes, and they [...] Read more.
Recently, with the development of automation technology in various fields, much research has been conducted on infrared photodetectors, which are the core technology of LiDAR sensors. However, most infrared photodetectors are expensive because they use compound semiconductors based on epitaxial processes, and they have low safety because they use the near-infrared (NIR) region that can damage the retina. Therefore, they are difficult to apply to automation technologies such as automobiles and factories where humans can be constantly exposed. In contrast, short-wavelength infrared photodetectors based on PbS QDs are actively being developed because they can absorb infrared rays in the eye-safe region by controlling the particle size of QDs and can be easily and inexpensively manufactured through a solution process. However, PbS QDs-based SWIR photodetectors have low chemical stability due to the electron/hole extraction layer processed by the solution process, making it difficult to manufacture them in the form of patterning and arrays. In this study, bulk NiO and ZnO were deposited by sputtering to achieve uniformity and patterning of thin films, and the performance of PbS QDs-based photodetectors was improved by optimizing the thickness and annealing conditions of the thin films. The fabricated photodetector achieved a high response characteristic of 114.3% through optimized band gap and improved transmittance characteristics. Full article
(This article belongs to the Special Issue Quantum Dot Materials and Their Optoelectronic Applications)
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