This article proposes a compact model for the radiation-sensitive field-effect transistor (RADFET). The model represents the basic I–V characteristics of the MOSFET device and includes the effects of threshold voltage shift as a function of abs...
The RADFET VT06 developed by Varadis (Cork, Ireland), which is aimed at high-dose applications, mainly for spacecraft missions, has been characterized by low- and high-energy proton beams at two different facilities, the Accelerator National Centre (...
We report on a procedure for extracting the SPICE model parameters of a RADFET sensor with a dielectric HfO2/SiO2 double-layer. RADFETs, traditionally fabricated as PMOS transistors with SiO2, are enhanced by incorporating high-k dielectric materials...
The paper suggests a design of radiation sensors based on metal-oxide-semiconductor (MOS) structures and p-channel radiation sensitive field effect transistors (RADFET) which are capable to function under conditions of high-field tunnel injection of...
This article provides a review of semiconductor based ionising radiation sensors to measure accumulated dose and detect individual strikes of ionising particles. The measurement of ionising radiation (
We report here complete 6-month results from the orbiting Space Environment Survivability of Living Organisms (SESLO) experiment. The world’s first and only long-duration live-biology cubesat experiment, SESLO was executed by one of two 10-cm c...