Search Results (91)

The ultraviolet photodetectors based on In:Ga₂O₃/p-GaN heterojunctions were fabricated by depositing an In:Ga₂O₃ thin film on a p-GaN substrate under different oxygen pressures using the pulsed laser deposition method. The devices exhibit typical self-powered behavior and a broad-spectrum response within the wavelength range of 250–345 nm. Under low oxygen pressure, the self-powered response peak of photodetectors with negative response current is mainly located at 345 nm, corresponding to the p-GaN layer. When the oxygen pressure exceeds 5 Pa, the response peak at 250 nm related to the In:Ga₂O₃ layer becomes the predominant peak, and the response current is positive. Studies demonstrate that the response peaks at 345 nm and 250 nm of the devices could be modulated by varying the applied bias voltage. The results indicate that, as the reverse bias increases, the response peak in the near ultraviolet region gradually decreases, while the response peak in the solar blind ultraviolet region gradually increases. The tunable photoresponse mechanism is attributed to the changes in the spatial-charge region and built-in electric field caused by devices prepared under different oxygen pressures and by varying the reverse bias applied to the devices. Full article

Although tungsten oxide (WO₃)-based NO₂ sensors have been extensively studied, achieving high sensitivity at low operating temperatures remains a significant challenge. To address this limitation, we designed a WO₃/SiNWs heterojunction-based sensor, fabricated through metal-assisted chemical etching followed by hydrothermal synthesis. Structural and morphological analyses confirm the uniform integration of WO₃ nanorods onto SiNWs and the establishment of an effective p–n junction. The optimized sensor exhibits a response of 238 toward 1 ppm NO₂ at 127 °C with a response/recovery times of 14.8 s/99.2 s. The improved performance stems from the heterojunction-driven enhancement of charge carrier separation and surface adsorption sites, offering a viable route for developing low-power, high-performance gas sensors. Full article

High-temperature operation of AlGaN/GaN Heterojunction Field Effect Transistor embedded diaphragm-based MEMS pressure sensors have been investigated, which utilized their wide bandgap and piezo resistivity to perform stably at elevated temperatures. The performance of the pressure sensor was observed over a change in applied pressure of 35 kPa, which resulted in an experimentally measured change in drain–source resistance (ΔR_DS/R_DS(0)) of 0.32% at room temperature and 0.65% at 250 °C, respectively. Additionally, the COMSOL-based Finite Element (FE) Simulations, in conjunction with our developed theoretical model, was utilized to theoretically determine the change in drain–source resistance. This theoretically calculated ΔR_DS/R_DS(0) of 0.45% at room temperature closely aligns with the experimental observations. Moreover, the sensor exhibited a gate-bias-dependent tunability, with the enhancement of sensitivity under increasingly negative gate voltages. Furthermore, the sensors demonstrated a stable and repeatable sensing operation over multiple pressure cycles up to 300 °C, with a rapid response time of <10 ms, suggesting excellent potential for reliable, high-performance pressure sensing in harsh, high-temperature environments. Full article

Ethanolamine (EA) is a widely used yet toxic volatile organic compound (VOC). However, existing gas sensors for EA detection face persistent challenges in achieving exceptional sensitivity and low detection limits at room temperature (RT). In this study, a novel and high-performance EA sensor based on the MoO₃/BiOI composite was prefabricated using hydrothermal and cyclic impregnation methods. The response value toward 100 ppm EA reached 861.3, which was 3.5-times higher compared to that of pure MoO₃. In addition, the MoO₃/BiOI composite exhibited a low detection limit (0.13 ppm), excellent selectivity, short response/recovery times, exceptional repeatability and long-term stability. The outstanding gas sensing performance of the MoO₃/BiOI is attributed to the formation of a p-n heterojunction, synergistic effects between the two materials, abundant adsorbed oxygen species and superior charge transfer efficiency. The sensor developed in this work effectively addresses the long-standing challenges, demonstrating unprecedented practical application potential for EA gas detection. Simultaneously, this study provides a novel strategy, a new approach and a promising material for the subsequent development of advanced amine sensors. Full article

Yttrium oxide (Y₂O₃) has emerged as a key material for advanced solar-blind ultraviolet (SBUV) photodetectors, attributable to its large bandgap energy (~5.5 eV), high dielectric constant, excellent silicon compatibility, and robust thermal stability. To precisely tune its optical bandgap for optimal alignment with the intrinsic solar-blind region, this study prepared Y_1.5In_0.5O₃ ternary alloy films via co-sputtering, achieving an optimized bandgap of 4.70 eV. After optimizing the photosensitive layer, we fabricated a self-powered Pt/Y_1.5In_0.5O₃/p-GaN back-to-back heterojunction SBUV photodetector was fabricated based on the optimized photosensitive layer. Under photovoltaic operation (0 V), the resulting device exhibited impressive performance metrics: a narrow spectral response (FWHM ~50 nm), quick rise/decay times of 30 and 75 ms, respectively, and high operational durability (less than 0.8% photocurrent degradation over 100 cycles). The detector also maintained a low noise current level (2.95 × 10⁻¹² A/Hz^1/2 at 1 Hz) and a low noise-equivalent power (NEP) of 4.42 × 10⁻⁹ W/Hz^1/2, indicating high sensitivity to weak optical signals. These results establish Y_xIn_2−xO₃ ternary alloy as a viable material platform for SBUV detection and provide a new design strategy for developing highly sensitive, low-noise and spectrally selective ultraviolet photodetectors. Full article

Nitrogen oxides (NO_x) are major atmospheric pollutants, and their escalating emissions, driven by rapid economic development and urbanization, pose a severe threat to both the ecological environment and human health. Conventional denitrification technologies are often hampered by high costs, significant energy consumption, and stringent operational conditions, making them increasingly inadequate in the face of tightening environmental regulations. In this context, photocatalytic technology, particularly systems based on graphitic carbon nitride (g-C₃N₄), has garnered significant research interest for NO_x removal due to its visible-light responsiveness, high stability, and environmental benignity. To advance the performance of g-C₃N₄, numerous modification strategies have been explored, including morphology control, elemental doping, defect engineering, and heterostructure construction. These approaches effectively broaden the light absorption range, enhance the separation efficiency of photogenerated electron-hole pairs, and improve the adsorption and conversion capacities for NO_x. Notably, constructing heterojunctions between g-C₃N₄ and other materials (e.g., metal oxides, noble metals, metal–organic frameworks (MOFs)) has proven highly effective in boosting catalytic activity and stability. Furthermore, the underlying photocatalytic mechanisms, encompassing the generation and migration pathways of charge carriers, the redox reaction pathways of NO_x, and the influence of external factors like light intensity and reaction temperature, have been extensively investigated. From an application perspective, g-C₃N₄-based photocatalysis demonstrates considerable potential in flue gas denitrification, vehicle exhaust purification, and air purification. Despite these advancements, several challenges remain, such as limited solar energy utilization, rapid charge carrier recombination, and insufficient long-term stability, which hinder large-scale implementation. Future research should focus on further optimizing the material structure, developing greener synthesis routes, enhancing catalyst stability and poison resistance, and advancing cost-effective engineering applications to facilitate the practical deployment of g-C₃N₄-based photocatalytic technology in air pollution control. Full article

In this study, the effects of switching on the two-dimensional electron gas (2-DEG) channel in an E-mode GaN-on-Si HEMT are investigated using a GS-065-004-1-L device that is commercially available for educational practice. A practical prototype with a reduced number of components is proposed, with empirical concepts used to explain its predictive performance when a coreless transformer is series-connected to the E-mode GaN-on-Si HEMT for switching-mode conduction. Conduction modes arising at the p-GaN/n-AlGaN/i-GaN heterojunction in accordance with specifications from the manufacturer’s datasheet were validated using a didactic physical-based model dependent on semiconductor parameters of gallium nitride (GaN). Test circuit-examined waveforms were analyzed, which confirmed that the switching conduction mode of the 2-DEG channel is dependent on physical parameters such as switching operating frequency, temperature, low-field electron mobility, and space charge capacitance. Full article

Room-temperature (RT) gas sensors for nitrogen dioxide (NO₂) detection face persistent challenges, including reliance on high operating temperatures and inefficient charge carrier utilization under UV activation. To address these limitations, we engineered a p-n nano-heterojunction (NHJ) gas sensor by integrating p-type nickel oxide (NiO) nanoparticles onto n-type zinc oxide (ZnO) nanorods. This architecture leverages UV-driven carrier generation and interfacial electric fields at the NHJ to suppress recombination, enabling unprecedented RT performance. By optimizing thermal annealing conditions, we achieved a well-defined heterojunction with uniform NiO distribution on the top of the ZnO nanorods, validated through electron microscopy and X-ray photoelectron spectroscopy. The resulting sensor exhibits a 5.4-fold higher normalized response to 50 ppm NO₂ under 365 nm UV illumination compared to pristine ZnO, alongside rapid recovery and stable cyclability. The synergistic combination of UV-assisted carrier generation and heterojunction-driven interfacial modulation offers a promising direction for next-generation RT gas sensors aimed at environmental monitoring. Full article

In this paper, a novel enhancement-mode β-Ga₂O₃-based FinFET structure with a gate formed by the NiO/β-Ga₂O₃ heterojunction named HJ-FinFET has been proposed, and the excellent performance of the device has also been demonstrated. The primary operational mechanism of this structure involves integrating p-type NiO on both sides of the fin-shaped channel, which forms p-n junctions with β-Ga₂O₃. The depletion regions thus generated are utilized to establish electron channels, enabling enhancement-mode operation. The reverse p-NiO/n-Ga₂O₃ heterojunction diode is integrated to reduce the reverse free-wheeling loss. Compared with the conventional devices, the threshold voltage of the HJ-FinFET is greatly improved, and normally off operation is realized, showing a positive threshold voltage of 2.14 V. Meanwhile, the simulated breakdown voltage of the HJ-FinFET reaches 2.65 kV with specific on-resistance (R_on,sp) of 2.48 mΩ·cm² and the power figure of merit (PFOM = BV²/R_on,sp) reaches 2840 MW/cm², respectively. In addition, the influence of the doping concentration of the heterojunction layer constituting the gate, the doping concentration of the drift layer, and the channel width on the electrical characteristics of the devices were focused on. This structure provides a feasible idea for high-performance β-Ga₂O₃-based FinFET. Full article

H₂S detection is critical for personal and industrial safety. Generally, metal oxide-based H₂S sensors exhibit no response at room temperature (RT). In this study, CuO/ZnWO₄ (C-ZWO) nanocomposites were prepared via a two-step hydrothermal process and applied to RT H₂S sensing. The results show that the C-ZWO sensors exhibit an elevated response value at RT and balanced gas-sensing properties at 100 °C. Significantly, the response value of a 10% C-ZWO sensor to 25 ppm of H₂S at RT is 651.6 with a response time of 78 s, which is 310.3 times that of the ZnWO₄ sensor (2.1). The systemic characterization results suggest that the enhanced RT H₂S-sensing properties are ascribed to the synergistic effects of the growth-specific surface area and oxygen vacancy occupancy, the enhanced oxygen reduction ability, and the formation of the p–n heterojunction structure between CuO and ZnWO₄. The C-ZWO nanocomposites possess added active sites for H₂S adsorption and dissociation, with the p–n heterojunction giving rise to higher electrical resistance, and thus, the follow-up produces a high response value even at RT. Full article

This study systematically investigates the effects of trap concentration on self-heating and terahertz (THz) responses in GaN HEMTs using Sentaurus TCAD. Traps, inherently unavoidable in semiconductors, can be strategically introduced to engineer specific energy levels that establish competitive dynamics between the electron momentum relaxation time and the carrier lifetime. A simulation-based exploration of this mechanism provides significant scientific value for enhancing device performance through self-heating mitigation and THz response optimization. An AlGaN/GaN heterojunction HEMT model was established, with trap concentrations ranging from 0 to $5\times {10}^{17} {\mathrm{c}\mathrm{m}}^{-3}$. The analysis reveals that traps significantly enhance channel current (achieving 3× gain at $1\times 10^{17} {\mathrm{c}\mathrm{m}}^{-3}$) via new energy levels that prolong carrier lifetime. However, elevated trap concentrations (>$1\times {10}^{16} {\mathrm{c}\mathrm{m}}^{-3}$) exacerbate self-heating-induced current collapse, reducing the min-to-max current ratio to 0.9158. In THz response characterization, devices exhibit a distinct DC component (${\mathrm{U}}_{\mathrm{d}\mathrm{c}}$) under non-resonant detection ($\mathsf{\omega }\mathsf{\tau }\ll 1$). At a trap concentration of $1\times {10}^{15} {\mathrm{c}\mathrm{m}}^{-3}$, ${\mathrm{U}}_{\mathrm{d}\mathrm{c}}$ peaks at $0.12 \mathrm{V}$ when ${\mathrm{V}}_{\mathrm{g}}\mathrm{D}\mathrm{C}=-7.8 \mathrm{V}$. Compared to trap-free devices, a maximum response attenuation of 64.89% occurs at ${\mathrm{V}}_{\mathrm{g}}\mathrm{D}\mathrm{C}=-4.9 \mathrm{V}$. Furthermore, ${\mathrm{U}}_{\mathrm{d}\mathrm{c}}$ demonstrates non-monotonic behavior with concentration, showing local maxima at $4\times {10}^{15} {\mathrm{c}\mathrm{m}}^{-3}$ and $7\times {10}^{15} {\mathrm{c}\mathrm{m}}^{-3}$, attributed to plasma wave damping and temperature-gradient-induced electric field variations. This research establishes trap engineering guidelines for GaN HEMTs: a concentration of $4\times {10}^{15} {\mathrm{c}\mathrm{m}}^{-3}$ optimally enhances conductivity while minimizing adverse impacts on both self-heating and the THz response, making it particularly suitable for high-sensitivity terahertz detectors. Full article

Recent advancements in biomarker technology have revolutionized diagnostic and monitoring applications, yet their potential in food quality assessment remains largely untapped. Herein, we report a breakthrough in gas-sensitive nanocomposite engineering through the design of α-Fe₂O₃-NiO heterostructures synthesized via a single-step hydrothermal protocol. The introduction of NiO led to increased oxygen vacancies and active sites, thereby reducing the sensor’s operating temperature. Additionally, the P-N heterojunction structure promoted the redistribution of electrons and hole, thus enhancing its conductivity. The optimized sensor exhibited high sensitivity (75.5% at 100 ppm), fast response/recovery (20 s/92 s), and perfect selectivity for NH₃ at room temperature. In the end, based on this sensor and combined with a Programmable Logic Controller (PLC), a rapid and nondestructive meat spoilage detection system was constructed to reflect the degree of spoilage of meat with the help of NH₃ concentration, providing a valuable strategy for the application of biomarker detection in the food industry. Full article

Triethylamine (TEA), a volatile organic compound (VOC), has important applications in industrial production. However, TEA has an irritating odor and potential toxicity, making it necessary to develop sensitive TEA gas sensors with high efficiency. This study focused on preparing LaFeO₃ nanoparticles modified by SnS₂ nanosheets (SnS₂/LaFeO₃ composite) using a hydrothermal method together with sol–gel technique. According to the comparison results of the gas-sensing performance between pure LaFeO₃ and SnS₂/LaFeO₃ composite with varying composition ratios, 5% SnS₂/LaFeO₃ sensor had a sensitivity for TEA that was 3.2 times higher than pure LaFeO₃ sensor. The optimized sensor operates at 140 °C and demonstrates strong stability, selectivity, and long-term durability. Detailed analyses revealed that the SnS₂ nanosheets enhanced oxygen vacancy (O_V) content and carrier mobility through heterojunction formation with LaFeO₃. This study provides insights into improving gas-sensing performance via p-n heterostructure design and proposes a novel LaFeO₃-based material for TEA detection. Full article

Thin TiO₂–SnO₂ nanocomposite films with high gas sensitivity to NO₂ were synthesized by oxidative pyrolysis and comprehensively studied. The composite structure and quantitative composition of the obtained film nanomaterials have been confirmed by X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and energy dispersive X-ray spectroscopy, which causes the presence of n-n heterojunctions and provides improved gas-sensitive properties. The sensor based on the 3TiO₂–97SnO₂ film has the maximum responses, which is explained by the existence of a strong surface electric field formed by large surface potentials in the region of TiO₂–SnO₂ heterojunctions detected by the Kelvin probe force microscopy method. Exposure to low-intensity radiation (no higher than 0.2 mW/cm², radiation wavelength—400 nm) leads to a 30% increase in the sensor response relative to 7.7 ppm NO₂ at an operating temperature of 200 °C and a humidity of 60% RH. At room temperature (20 °C), under humidity conditions, the response is 1.8 when exposed to 0.2 ppm NO₂ and 85 when exposed to 7.7 ppm. The lower sensitivity limit is 0.2 ppm NO₂. The temporal stability of the proposed sensors has been experimentally confirmed. Full article

We propose a novel ultraviolet (UV) phototransistor (PT) architecture based on an AlGaN/GaN high electron mobility transistor (HEMT) with a buried p-GaN layer. In the dark, the polarization-induced two-dimensional electron gas (2DEG) at the AlGaN/GaN heterojunction interface is depleted by the buried p-GaN and the conduction channel is closed. Under UV illumination, the depletion region shrinks to just beneath the AlGaN/GaN interface and the 2DEG recovers. The retraction distance of the depletion region during device turn-on operation is comparable to the thickness of the AlGaN barrier layer, which is an order of magnitude smaller than that in the conventional p-GaN/AlGaN/GaN PT, whose retraction distance spans the entire GaN channel layer. Consequently, the proposed device demonstrates significantly enhanced weak-light detection capability and improved switching speed. Silvaco Atlas simulations reveal that under a weak UV intensity of 100 nW/cm², the proposed device achieves a photocurrent density of 1.68 × 10⁻³ mA/mm, responsivity of 8.41 × 10⁵ A/W, photo-to-dark-current ratio of 2.0 × 10⁸, UV-to-visible rejection ratio exceeding 10⁸, detectivity above 1 × 10¹⁹ cm·Hz^1/2/W, and response time of 0.41/0.41 ns. The electron concentration distributions, conduction band variations, and 2DEG recovery behaviors in both the conventional and novel structures under dark and weak UV illumination are investigated in depth via simulations. Full article