Search Results (843)

The growing demand for electric vehicles, renewable energy systems, and portable electronics has led to the widespread adoption of power conversion systems. Although advanced structures like the superjunction MOSFET have prolonged the viability of silicon in power applications, maintaining its dominance through cost efficiency, Si-based technology is ultimately constrained by its intrinsic limitations in critical electric fields. To address these constraints, research into wide bandgap semiconductors aims to minimize system footprint while maximizing efficiency. This study reviews the semiconductor landscape, demonstrating why Gallium Nitride (GaN) has emerged as the most promising technology for next-generation power applications. With a critical electric field of $3.75\mathrm{MV}/\mathrm{cm}$ ($12.5\times$ higher than Si), GaN facilitates power devices with lower conduction loss and higher frequency capability when compared to their Si counterpart. Furthermore, this paper surveys the GaN ecosystem, ranging from device modeling and packaging to monolithic ICs and switching converter implementations based on discrete transistors. While existing literature primarily focuses on discrete devices, this work addresses the critical gap regarding GaN monolithic integration. It synthesizes key challenges and achievements in the design of GaN integrated circuits, providing a comprehensive review that spans semiconductor technology, monolithic circuit architectures, and system-level applications. Reported data demonstrate monolithic stages reaching $30\mathrm{m}\Omega$ and $25\mathrm{MHz}$, exceeding Si performance limits. Additionally, the study reports on high-density hybrid implementations, such as a space-grade POL converter achieving $123.3\mathrm{kW}/\mathrm{L}$ with $90.9\%$ efficiency. Full article

Direct-starting of industrial motors has problems such as large current impact (five to eight times the rated current), mechanical stress damage, and low energy efficiency. This paper explores the technological innovations in motor soft-start driven by intelligent control and wide-bandgap semiconductors, and constructs a highly reliable and low energy consumption solution. Firstly, based on a material–device–algorithm system framework, a comparative study is conducted on the performance breakthroughs of SiC/GaN in replacing silicon-based devices. Secondly, an intelligent control model is established and a highly reliable system architecture is developed. A comprehensive review of recent literature indicates that SiC devices can reduce switching losses by up to 80%, and intelligent algorithms significantly improve control accuracy. System-level solutions reported in the industry demonstrate the capability to limit current to 1.5–3 times the rated current and achieve substantial carbon emission reductions. These technologies provide key technical support for the intelligent upgrading of industrial motor systems and the dual-carbon goal. In the future, development will continue to evolve in the direction of device miniaturization and other directions. Full article

Dislocation reduction in gallium nitride (GaN) epitaxial layers remains a critical challenge for high-performance GaN-based electronic devices. In this study, GaN epitaxial growth on newly-developed 4H-Silicon Carbide (SiC) meta-substrates was systematically investigated to elucidate the role of surface pattern geometry in modulating dislocation propagation. A series of truncated-hexagonal-pyramid meta-structures with a fixed array period and varying pattern ratios (R) were designed and fabricated to enable controlled tuning of the effective surface morphology. Atomic force microscopy confirmed comparable surface flatness for all samples after epitaxial growth. Cathodoluminescence analysis revealed a non-monotonic dependence of defect density on R, indicating the existence of an optimal pattern geometry. Among all configurations, the outstanding sample exhibited the lowest defect density, achieving a 54.96% reduction in threading dislocations (edge + mixed) compared with a planar reference. Cross-sectional transmission electron microscopy further confirmed a substantially reduced dislocation density and clear evidence of dislocation bending and termination near the meta-structured regions. These results demonstrate that geometry-engineered 4H-SiC meta-substrates provide an effective and scalable strategy for dislocation modulation in GaN epitaxy on SiC meta-substrates, offering a promising pathway toward advanced GaN power and RF devices. Full article

We report on the fabrication and characterization of InGaN-based ridge-waveguide laser diodes employing spin-on-glass (SOG) as the insulation and planarization layer. In contrast to conventional silicon dioxide (SiO₂) isolation deposited by PECVD, the SOG approach provides improved surface planarity, reduced processing complexity, and lower fabrication cost. The laser structures were grown on GaN substrates by MOCVD, with the active region consisting of In_0.11Ga_0.89N quantum wells. Following ridge formation and SOG deposition, an etch-back process was used to form the electrical contacts. We have demonstrated the formation of high-quality insulating surfaces with strong adhesion to the ridge sidewalls. When using a Ni protective layer, the fabricated devices exhibited favorable electrical and optical characteristics and achieved stable laser operation under both pulsed and continuous-wave conditions. These results indicate that the SOG-based insulation process represents a promising alternative for the scalable and cost-effective fabrication of InGaN laser diodes targeting advanced photonic applications. Full article

In this paper, a nano-layered transmission GaAs photocathode structure is proposed. The near-infrared absorption of the photocathode is enhanced by inserting a “sandwich” structure of nano-SiO₂ layer + Si₃N₄ nanopillar array + nano-SiO₂ layer between the cathode optical window and the photocathode. Compared with the flat film structure GaAs photocathode used in the current third-generations image intensifiers, the optical absorption of the optimized “sandwich” structure GaAs photocathode in the near-infrared band has been significantly improved: when the wavelength λ is 868 nm and 896 nm, the optical absorption is increased by 41.69%, 55.08%, respectively. The effects of structural parameters including film thickness and grating filling medium on the light absorption of photocathode are investigated. The results show that the near-infrared light absorption enhancement is the most obvious when Si₃N₄ is selected as the grating filling medium for the current design, and the deposition of SiO₂ film with 10 nm thickness could effectively prevent the damage of Si₃N₄ during bonding with the photocathode. The theoretical analyses offer important guidance in material selection and structural optimization in the grating cathode optical window used in the third-generation image intensifier for improving performance. Full article

We demonstrate the fabrication of air gaps in a PECVD SiN interlayer through lateral recess by employing two consecutive plasma etch steps on an AlN/SiN/Al₂O₃ stack. This approach enables the preservation of sub-100 nm openings in Al₂O₃, offering a potential optimization for the GaN-HEMT gate stack in RF applications while retaining low gate foot dimensions. A low-power, SF₆-based plasma etch is introduced, and time-dependent etch profiles reveal the formation of a skirt-like profile. The process exhibits excellent selectivity between SiN and Al₂O₃ etch rates. Furthermore, low-power SF₆ plasma produces a small self-bias voltage, and surface fluorine contamination which can subsequently be eliminated by annealing. Full article

Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) are key enablers of power-electronics converters for aerospace platforms, where high efficiency, weight reduction, and thermal robustness are critical requirements. This paper presents the main challenges associated with the use of these technologies, including protection requirements, electromagnetic compatibility, and thermal management, as well as the material advantages that enable higher switching frequencies and lower losses compared to conventional Si technologies. A comparative analysis of semiconductor technologies and suitable power-conversion topologies for the aerospace context is provided. Representative laboratory-scale experimental validation is presented, including the development of a DC–DC boost converter and a DC–AC full-bridge inverter, which are linked through the common DC-link and are used for interfacing batteries and an electrical motor, both based on GaN and SiC diodes. The results demonstrated the correct operation, with stable high-frequency performance under controlled laboratory conditions, supporting aerospace-oriented development, although evaluated in a laboratory environment, confirming the potential of WBG technologies for future power-conversion architectures. Full article

Sintered nano-silver is widely investigated as a die-attach material for next-generation power electronic modules due to its high thermal conductivity, favorable electrical performance, and stability at elevated temperatures. However, how bonding pressure and joint thickness jointly affect densification, interfacial diffusion, and mechanical reliability has not been systematically clarified, especially under the low-pressure conditions required for large-area SiC and GaN devices. In this work, nano-silver lap-shear joints with three bond-line thicknesses (50, 70, and 100 μm) were fabricated under two applied pressures (1.0 and 1.5 MPa) using a controlled sintering fixture. Shear testing and cross-sectional SEM were employed to evaluate the relationships between microstructural evolution and joint integrity. When the bonding pressure was increased from 1.0 to 1.5 MPa, more effective particle rearrangement and reduced pore connectivity were observed, together with improved metallurgical bonding at the Ag–Au interface, leading to a strength increase from 15.3 to 28.2 MPa. Although thicker joints exhibited slightly higher bulk relative density due to greater heat retention and accelerated local sintering, this densification advantage did not lead to improved mechanical performance. Instead, the lower strength of thicker joints is attributed to a narrower Ag–Au interdiffusion region, which limited the formation of continuous load-bearing paths at the interface. Fractographic analyses confirmed that failure occurred predominantly by interfacial delamination rather than cohesive fracture, indicating that the reliability of the joints under low-pressure sintering is governed by the quality of interfacial bonding rather than by overall densification. The experimental results show that, under low-pressure sintering conditions (1.0–1.5 MPa), variations in bonding pressure and bond-line thickness lead to distinct effects on joint performance, with the extent of Ag–Au interfacial interaction playing a key role in determining the mechanical robustness of the joints. Full article

The key question for understanding the corrosion phenomena of Si₃N₄-SiC material in Al reduction cells is as follows: does the interaction with gases promote future step corrosion by molten cryolite (bath) or does cryolite interact with the Si₃N₄-SiC refractory and deteriorate the properties of the refractory material? More probably the reactions of silicon carbide and silicon nitride with gases, which result in the formation of silica, occur before the reactions of silica with molten cryolite. The corrosion of Si₃N₄-SiC material in the reduction cell may take place by “gas-solid” reaction and by “liquid-solid” reaction. There are several variants of lab corrosion tests for the evaluation of the corrosion resistance of Si₃N₄-SiC material to cryolite. The results of the investigation of Si₃N₄-SiC lab corrosion tests give no direct evidence of selective dissolution at a specific phase (Si₃N₄ or SiC, α-Si₃N₄ or β-Si₃N₄) in cryolite. The existing variants of lab corrosion testing require clarification. Full article

This review summarizes the use of Auger Electron Spectroscopy (AES) for microchemical analysis of two different types of dielectric/(Al,Ga)N-based systems: (i) extrinsic dielectric PECVD SiO₂, ALD Al₂O₃, and ECR-CVD SiN_x films on Al_xGa_1−xN/GaN structures in the context of their application in microelectronic power devices and (ii) intrinsic Al₂O₃ films on AlN epitaxial layers grown by high-temperature oxidation for nanostructured technology of various gas/ion sensors. Particular attention is given to AES depth profiling across complete multilayer cross-sections, combining qualitative analysis of spectral line shape and intensity evolution as well as kinetic energy shifts with quantitative elemental depth distributions. This approach enables identification of chemical states and oxidation-related transformations at dielectric/semiconductor interfaces. Reported results demonstrate that AES provides micro- to nanometer-scale chemical information essential for distinguishing interfacial from the bulk properties. The capabilities and inherent limitations of AES depth profiling, including sputter-induced artifacts are also addressed, highlighting the role of optimized experimental conditions in reliable interface analysis. Full article

Acidic agricultural soils are frequently challenged by co-occurring heavy metal contamination and greenhouse gas (GHG) emissions. While biochar is widely used for integrated remediation, the specific role of silicon (Si) in modulating its effectiveness in cadmium (Cd) stabilization and nitrous oxide (N₂O) mitigation remains insufficiently understood. This study evaluated the co-remediation efficacy of two types of high-Si (bamboo leaves, ML; rice straw, RS) and two types of low-Si (Camellia oleifera leaves, CL; Camellia oleifera shells, CS) biochar, produced at 450 °C, within a Cd-contaminated and nitrogen-fertilized acidic soil. Results from a 90-day incubation showed that while all biochar effectively immobilized Cd, the low-Si CL biochar exhibited a superior stabilization efficiency of 66.2%. This enhanced performance was attributed to its higher soil organic carbon (SOC) and moderate dissolved organic carbon (DOC) release, which facilitated robust Cd²⁺ sorption and complexation. In contrast, high-Si biochar was more effective in mitigating cumulative N₂O emissions (up to 67.8%). This mitigation was strongly associated with an elevated abundance of the nosZ gene (up to 48.1%), which catalyzes the terminal step of denitrification. Soil pH and DOC were identified as pivotal drivers regulating both Cd bioavailability and N₂O dynamics. Collectively, low-Si biochar is preferable for Cd stabilization in acidic soils, whereas high-Si biochar is more effective at elevating pH and reducing N₂O emissions. These findings emphasize that optimizing co-remediation outcomes necessitates a targeted approach, selecting biochar based on the specific contamination profile and desired environmental benefits. Full article

We investigated the radio frequency (RF) performance of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on silicon carbide substrates, featuring two distinct T-shaped gate structures. A comparative analysis between a silicon nitride (SiN_x)-passivated T-gate and a floating T-gate design reveals significant differences in parasitic capacitance and high-frequency behavior. The floating gate structure effectively reduces fringe capacitance, resulting in improved cut-off frequency (f_T) and maximum oscillation frequency (f_max), achieving f_T = 82.7 GHz and f_max = 80.2 GHz, respectively. These enhancements underscore the critical importance of optimizing gate structures to advance GaN-based HEMTs for high-speed and high-power applications. The findings provide valuable insights for the design of future RF and millimeter-wave (mm-wave) devices. Full article

The development of cost-effective non-noble metal catalysts for the partial oxidation of methane (POM) remains a key strategy for producing hydrogen-rich syngas while mitigating greenhouse gas emissions. In this study, cobalt-supported alumina (Co/Al₂O₃) catalysts were prepared using 5 wt.% of Co and calcined at 600, 700, and 800 °C. Subsequently, Co/Al₂O₃ catalysts were promoted with 10 wt.% Mg, Si, Ti, and Zr at the optimized calcination temperature. The catalysts were systematically characterized by FT-IR, XRD, N₂ physisorption, H₂-TPR, and XPS analyses. Catalytic activity tests for POM of CH₄ were conducted at 600 °C (CH₄/O₂ = 2 and GHSV = 14,400 mL g⁻¹ h⁻¹). Catalysts calcined at 700 °C (5Co/Al_700) exhibited the highest activity among unpromoted samples, with CH₄ conversion of 43.9% and H₂ yield of 41.8%. The superior performance was attributed to its high surface area and the abundance of reducible Co³⁺ species, generating a greater number of Co⁰ active sites. XPS results confirmed the structural stability of γ-Al₂O₃ and preserved Co–Al interactions across calcination temperatures, while promoters mainly modulated Co dispersion and redox accessibility. Among the promoted catalysts, the activity order followed: 5Co/10ZrAl > 5Co/10MgAl> unpromoted-5Co/Al_700 > 5Co/10SiAl > 5Co/10TiAl. Si and Ti promoted catalysts acquired less concentration of active sites and less activity as well. The concentration of reducible species as well as initial activity towards POM are comparable over Zr and Mg-promoted catalysts. However, earlier one has a higher edge of reducibility and sustained constant activity over time in a stream study. The Zr-promoted catalyst exhibited superior reducibility and remarkable stability, achieving 47.3% CH₄ conversion and 44.4% H₂ yield sustained over 300 min time-on-stream. TEM analysis of spent 5Co/10ZrAl indicated that Zr promotion suppressed graphitic carbon formation. Full article

Scanning electron microscopy (SEM) is widely used for nanoscale imaging and the study of surface fine structure. However, its image quality is often limited by low secondary electron (SE) yield and surface charging, especially on insulating or micro-structured materials. In this study, we introduce a non-destructive technique that significantly improves SEM image acquisition by irradiating the specimen surface with ultraviolet (UV) light during observation. This approach leverages the photoelectric effect to enhance SE emission, resulting in a higher signal-to-noise ratio and improved image contrast in SEM imaging. Experiments were conducted using an in situ UV irradiation module on three representative samples: a 1 µm thick gold film (Au) deposited on a 525 µm thick silicon (Si) substrate, a black silicon (b-Si) sample, and a GaN substrate. The results demonstrate clear SE signal enhancement and effective charge mitigation under UV illumination. This UV-assisted SEM technique offers a simple and practical approach to improving electron-beam-based imaging and is expected to expand capabilities for high-contrast observation of nanoscale materials. Full article

Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are pivotal for next-generation power-switching applications, but their reliability under high electric fields remains constrained by lattice mismatches and high dislocation densities in heterogeneous substrates. Herein, we systematically investigate the electrical performance and reliability of GaN-on-GaN HEMTs in comparison to conventional GaN-on-SiC HEMTs via DC characterization, reverse gate step stress, off-state drain step stress, and on-state electrical stress tests. Notably, the homogeneous epitaxial structure of GaN-on-GaN devices reduces dislocation density by 83.3% and minimizes initial tensile stress, which is obtained through HRXRD and Raman spectroscopy. The GaN-on-GaN HEMTs exhibit a record BFOM of 950 MW/cm², enabled by a low specific on-resistance (R_ON-SP) of 0.6 mΩ·cm² and a high breakdown voltage (BV) of 755 V. They withstand gate voltages up to −200 V and drain voltages beyond 200 V without significant degradation, whereas GaN-on-SiC HEMTs fail at −95 V (reverse gate stress) and 150 V (off-state drain stress). The reduced dislocation density suppresses leakage channels and defect-induced degradation, as confirmed by post-stress Schottky/transfer characteristics and Frenkel–Poole emission analysis. These findings establish GaN-on-GaN technology as a transformative solution for power electronics, offering a unique combination of high efficiency and long-term stability for demanding high-voltage applications. Full article