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Nanomaterials
Special Issues
Electro-Thermal Transport in Nanometer-Scale Semiconductor Devices
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Electro-Thermal Transport in Nanometer-Scale Semiconductor Devices

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: 25 August 2026 | Viewed by 2588

Special Issue Editor

Dr. Mei Wu

E-Mail Website
Guest Editor
National Engineering Research Center of Wide Band-Gap Semiconductor, Faculty of Integrated Circuit, Xidian University, Xi'an 710126, China
Interests: design of GaN RF power devices; homojunction epitaxial GaN devices; thermal transport theory and control techniques; micro/nanoelectronic integration

Special Issue Information

Dear Colleagues,

Understanding thermal and electrical transport in complex nanostructures is crucial for the development of next-generation materials and devices. As the size of materials approaches the nanoscale, their physical properties, especially thermal and electrical transportation, begin to exhibit unique behaviors influenced by factors such as composition, structure, and temperature. Modeling and prediction are important tools for understanding the thermophysical properties of nanostructures. A variety of theoretical and computational techniques are employed to simulate and measure such properties at the nanoscale, aiding researchers and engineers in improving the performance of these materials under various conditions

We are pleased to invite you to contribute original and review articles to this Special Issue regarding electro-thermal research on nanometric semiconductor devices. Potential topics include, but are not limited to, the following: electrical and thermal simulation, nanoscale characterization methods, thermal management for devices, energy conversion and storage, thermal boundary resistance modulation, and electro-thermal co-design.

We look forward to receiving your contributions.

Dr. Mei Wu
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 250 words) can be sent to the Editorial Office for assessment.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nanomaterials and nanostructures
  • electrical and thermal transport
  • simulations
  • characterization techniques
  • thermal management
  • electro-thermal co-design
  • energy conversion and storage

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Published Papers (2 papers)

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Research

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13 pages, 3982 KB  
Article
High Reliability and Breakdown Voltage of GaN HEMTs on Free-Standing GaN Substrates
by Shiming Li, Mei Wu, Ling Yang, Hao Lu, Bin Hou, Meng Zhang, Xiaohua Ma and Yue Hao
Nanomaterials 2025, 15(24), 1882; https://doi.org/10.3390/nano15241882 - 15 Dec 2025
Cited by 1 | Viewed by 991
Abstract
Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are pivotal for next-generation power-switching applications, but their reliability under high electric fields remains constrained by lattice mismatches and high dislocation densities in heterogeneous substrates. Herein, we systematically investigate the electrical performance and reliability of [...] Read more.
Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are pivotal for next-generation power-switching applications, but their reliability under high electric fields remains constrained by lattice mismatches and high dislocation densities in heterogeneous substrates. Herein, we systematically investigate the electrical performance and reliability of GaN-on-GaN HEMTs in comparison to conventional GaN-on-SiC HEMTs via DC characterization, reverse gate step stress, off-state drain step stress, and on-state electrical stress tests. Notably, the homogeneous epitaxial structure of GaN-on-GaN devices reduces dislocation density by 83.3% and minimizes initial tensile stress, which is obtained through HRXRD and Raman spectroscopy. The GaN-on-GaN HEMTs exhibit a record BFOM of 950 MW/cm2, enabled by a low specific on-resistance (RON-SP) of 0.6 mΩ·cm2 and a high breakdown voltage (BV) of 755 V. They withstand gate voltages up to −200 V and drain voltages beyond 200 V without significant degradation, whereas GaN-on-SiC HEMTs fail at −95 V (reverse gate stress) and 150 V (off-state drain stress). The reduced dislocation density suppresses leakage channels and defect-induced degradation, as confirmed by post-stress Schottky/transfer characteristics and Frenkel–Poole emission analysis. These findings establish GaN-on-GaN technology as a transformative solution for power electronics, offering a unique combination of high efficiency and long-term stability for demanding high-voltage applications. Full article
(This article belongs to the Special Issue Electro-Thermal Transport in Nanometer-Scale Semiconductor Devices)
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Review

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24 pages, 8244 KB  
Review
Recent Advances in Diamond-Capped GaN HEMTs for RF Application
by Yuanmeng Xiang, Mei Wu, Haolun Sun, Shiming Li, Hongda Chen, Jiamin Wei, Binyan Yan, Ling Yang, Meng Zhang, Hao Lu, Bin Hou, Xiaohua Ma and Yue Hao
Nanomaterials 2026, 16(4), 224; https://doi.org/10.3390/nano16040224 - 9 Feb 2026
Viewed by 1120
Abstract
Self-heating effects severely limit the performance of gallium nitride high-electron-mobility transistors (GaN HEMTs) in high-power radio frequency (RF) applications. Diamond capping technology leveraging diamond’s exceptional thermal conductivity (>2000 W/m·K) has emerged as a highly promising near-junction cooling solution. However, its integration with GaN [...] Read more.
Self-heating effects severely limit the performance of gallium nitride high-electron-mobility transistors (GaN HEMTs) in high-power radio frequency (RF) applications. Diamond capping technology leveraging diamond’s exceptional thermal conductivity (>2000 W/m·K) has emerged as a highly promising near-junction cooling solution. However, its integration with GaN HEMTs faces challenges including lattice/thermal mismatch, high thermal boundary resistance (TBR), and process compatibility. This review summarizes recent progress in high-thermal-conductivity diamond film growth, TBR optimization, thermal simulations, and the integrated process with GaN devices. These technological breakthroughs enable diamond-capped GaN HEMTs with an excellent comprehensive performance. Continued advances in these fields will be critical for fully releasing the capabilities of diamond capping technology for GaN HEMTs in high-frequency and high-power applications. Full article
(This article belongs to the Special Issue Electro-Thermal Transport in Nanometer-Scale Semiconductor Devices)
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