Electro-Thermal Transport in Nanometer-Scale Semiconductor Devices
A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".
Deadline for manuscript submissions: 20 February 2026 | Viewed by 20
Special Issue Editor
Interests: design of GaN RF power devices; homojunction epitaxial GaN devices; thermal transport theory and control techniques; micro/nanoelectronic integration
Special Issue Information
Dear Colleagues,
Understanding thermal and electrical transport in complex nanostructures is crucial for the development of next-generation materials and devices. As the size of materials approaches the nanoscale, their physical properties, especially thermal and electrical transportation, begin to exhibit unique behaviors influenced by factors such as composition, structure, and temperature. Modeling and prediction are important tools for understanding the thermophysical properties of nanostructures. A variety of theoretical and computational techniques are employed to simulate and measure such properties at the nanoscale, aiding researchers and engineers in improving the performance of these materials under various conditions
We are pleased to invite you to contribute original and review articles to this Special Issue regarding electro-thermal research on nanometric semiconductor devices. Potential topics include, but are not limited to, the following: electrical and thermal simulation, nanoscale characterization methods, thermal management for devices, energy conversion and storage, thermal boundary resistance modulation, and electro-thermal co-design.
We look forward to receiving your contributions.
Dr. Mei Wu
Guest Editor
Manuscript Submission Information
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Keywords
- nanomaterials and nanostructures
- electrical and thermal transport
- simulations
- characterization techniques
- thermal management
- electro-thermal co-design
- energy conversion and storage
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