Preparation and Application of Nanowires

Dear colleagues,

The first semiconductor microwires were grown using the vapor–liquid–solid method in 1964. At the beginning of the 2000s, a rapid development of semiconductor nanowires began through the use of modern epitaxy techniques. This has resulted in tremendous progress in nanowire synthesis, characterization, and applications. One important advantage of nanowires is that they allow for a very efficient relaxation of elastic stress induced by lattice mismatch, thus enabling dislocation-free growth on dissimilar substrates such as silicon for III-V nanowires, and in nanowire heterostructures. Semiconductor nanowires are now widely considered as fundamental blocks of nanoscience and nanotechnology. This Special Issue will share the latest achievements in preparation, fundamental studies, and applications of nanowires in different material systems. Special emphasis will be put on the synthesis methods for fabrication of highly regular arrays of nanowires, ternary III–V nanowires and heterostructures based on such nanowires, morphological and crystal phase control in nanowires, advanced characterization techniques, and nanowires applications in electronics, photonics, and sensing.

Prof. Vladimir G. Dubrovskii
Guest Editor

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