Graphene-Based Field-Effect Transistors

Dear Colleagues,

Transistors are elementary units of almost all electronic systems. Due to the limitations of Moore's law and traditional semiconductor transistors, for the purpose of improving transistors’ response frequency and broadening their capabilities in neuromorphological calculation, energy harvesting, sensors and so on, numerous contributions have been made to develop nano-material-based solutions. Among them, graphene-based field-effect transistors (GFETs) have been proved to be an optimum candidate in the next post-Si generation due to graphene’s superior high theoretical charge-carrier speed and electron mobility, extremely high transconductance gain, etc. GFETs can be retrospected to the finding of graphene; up until now, GFETs have been the focus of attention in many fields, such as nanometer-sized high-speed logic circuits, synaptic devices and sensors for the detection of gas, DNA, protein, and viruses, etc. 

In this respect, the design and fabrication of GFETs, their implementation in high-speed logic circuits, and their applications in artificial synapses and sensors are all the focusing topics of this Special Issue, especially the efforts or novel ideas in the disciplines of the artificial synapses, sensors, electronic skin, power-generation and storage devices, and so on. 

We would like to invite researchers and scientists to publish their works in this Special Issue with research papers and review articles focusing on trends in GFETs, from fundamental research to applications. The focus of this Issue includes but is not limited to sensors, synaptic devices, modelling and simulation.

Prof. Dr. Yunfang Jia
Dr. Zhongrong Wang
Guest Editors

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