Special Issue "Heusler and Half-Heusler Compounds"
A special issue of Materials (ISSN 1996-1944).
Deadline for manuscript submissions: closed (31 October 2019).
The increasing interest in Heusler and half-Heusler compounds, since the first discovery of the 1st Cu2MnAl Heusler compound by the German scientist Friedrich Heusler in 1903, passing 100,000 publications in 2017, with more than 1500 reported compounds, is due to their high potential for a wide variety of applications in future energy fields (including thermoelectrics, solar cells) and spintronics. New ferromagnetic, semiconducting, or even topological-insulating Heusler and half-Heusler compositions with unique properties are constantly reported, highlighting their scientific and applicative significance. The more than 250 semiconducting phases reported to date can be tuned to modify their energy gaps, from 0 to 4 eV, using chemical composition and process parameter variations. Magnetism can be controlled in the metallic phases and combining superconductivity with topological states can lead to new multifunctional materials.
New compositions and superstructures based on Heusler and half-Heusler compounds are being reported and investigated, both experimentally and theoretically (including by using the density functional theory, DFT) to understand the role of defects (e.g., grain boundaries, vacancies, etc.) and multi-phase interactions on their physical properties.
Among the semiconducting compounds, half-Heuslers exhibit superior mechanical properties, enabling their potential use in various applications, including thermoelectrics, in which the materials are subjected to large thermal gradients and cycles.
There are many other possible applications and phenomena related to Heusler and half-Heusler compounds and the field is rapidly advancing into new areas of discovery.
It is my pleasure to invite you to submit a manuscript for this Special Issue. Full papers, communications, and reviews are all welcome.Prof. Yaniv Gelbstein
Manuscript Submission Information
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