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Article

Thermal and Electronic Transport Properties of the Half-Heusler Phase ScNiSb

1
Institute of Low Temperature and Structure Research, Polish Academy of Sciences, P. O. Box 1410, 50-950 Wrocław, Poland
2
Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Straße 40, 01187 Dresden, Germany
3
Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, 60-179 Poznań, Poland
*
Author to whom correspondence should be addressed.
Materials 2019, 12(10), 1723; https://doi.org/10.3390/ma12101723
Received: 13 May 2019 / Revised: 24 May 2019 / Accepted: 24 May 2019 / Published: 27 May 2019
(This article belongs to the Special Issue Heusler and Half-Heusler Compounds)
Thermoelectric properties of the half-Heusler phase ScNiSb (space group F 4 ¯ 3m) were studied on a polycrystalline single-phase sample obtained by arc-melting and spark-plasma-sintering techniques. Measurements of the thermopower, electrical resistivity, and thermal conductivity were performed in the wide temperature range 2–950 K. The material appeared as a p-type conductor, with a fairly large, positive Seebeck coefficient of about 240 μV K−1 near 450 K. Nevertheless, the measured electrical resistivity values were relatively high (83 μΩm at 350 K), resulting in a rather small magnitude of the power factor (less than 1 × 10−3 W m−1 K−2) in the temperature range examined. Furthermore, the thermal conductivity was high, with a local minimum of about 6 W m−1 K−1 occurring near 600 K. As a result, the dimensionless thermoelectric figure of merit showed a maximum of 0.1 at 810 K. This work suggests that ScNiSb could be a promising base compound for obtaining thermoelectric materials for energy conversion at high temperatures. View Full-Text
Keywords: Heusler alloys; thermoelectric; ScNiSb Heusler alloys; thermoelectric; ScNiSb
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MDPI and ACS Style

Synoradzki, K.; Ciesielski, K.; Veremchuk, I.; Borrmann, H.; Skokowski, P.; Szymański, D.; Grin, Y.; Kaczorowski, D. Thermal and Electronic Transport Properties of the Half-Heusler Phase ScNiSb. Materials 2019, 12, 1723. https://doi.org/10.3390/ma12101723

AMA Style

Synoradzki K, Ciesielski K, Veremchuk I, Borrmann H, Skokowski P, Szymański D, Grin Y, Kaczorowski D. Thermal and Electronic Transport Properties of the Half-Heusler Phase ScNiSb. Materials. 2019; 12(10):1723. https://doi.org/10.3390/ma12101723

Chicago/Turabian Style

Synoradzki, Karol; Ciesielski, Kamil; Veremchuk, Igor; Borrmann, Horst; Skokowski, Przemysław; Szymański, Damian; Grin, Yuri; Kaczorowski, Dariusz. 2019. "Thermal and Electronic Transport Properties of the Half-Heusler Phase ScNiSb" Materials 12, no. 10: 1723. https://doi.org/10.3390/ma12101723

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