Thermal and Electronic Transport Properties of the Half-Heusler Phase ScNiSb

3m) were studied on a polycrystalline single-phase sample obtained by arc-melting and spark-plasma-sintering techniques. Measurements of the thermopower, electrical resistivity, and thermal conductivity were performed in the wide temperature range 2–950 K. The material appeared as a p-type conductor, with a fairly large, positive Seebeck coefficient of about 240 μV K⁻¹ near 450 K. Nevertheless, the measured electrical resistivity values were relatively high (83 μΩm at 350 K), resulting in a rather small magnitude of the power factor (less than 1 × 10⁻³ W m⁻¹ K⁻²) in the temperature range examined. Furthermore, the thermal conductivity was high, with a local minimum of about 6 W m⁻¹ K⁻¹ occurring near 600 K. As a result, the dimensionless thermoelectric figure of merit showed a maximum of 0.1 at 810 K. This work suggests that ScNiSb could be a promising base compound for obtaining thermoelectric materials for energy conversion at high temperatures. View Full-Text

Keywords: Heusler alloys; thermoelectric; ScNiSb

▼ Show Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited

Share and Cite

MDPI and ACS Style

Synoradzki, K.; Ciesielski, K.; Veremchuk, I.; Borrmann, H.; Skokowski, P.; Szymański, D.; Grin, Y.; Kaczorowski, D. Thermal and Electronic Transport Properties of the Half-Heusler Phase ScNiSb. Materials 2019, 12, 1723. https://doi.org/10.3390/ma12101723

AMA Style

Synoradzki K, Ciesielski K, Veremchuk I, Borrmann H, Skokowski P, Szymański D, Grin Y, Kaczorowski D. Thermal and Electronic Transport Properties of the Half-Heusler Phase ScNiSb. Materials. 2019; 12(10):1723. https://doi.org/10.3390/ma12101723

Chicago/Turabian Style

Synoradzki, Karol, Kamil Ciesielski, Igor Veremchuk, Horst Borrmann, Przemysław Skokowski, Damian Szymański, Yuri Grin, and Dariusz Kaczorowski. 2019. "Thermal and Electronic Transport Properties of the Half-Heusler Phase ScNiSb" Materials 12, no. 10: 1723. https://doi.org/10.3390/ma12101723

Find Other Styles

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Metrics

Abstract views Pdf views Html views

Article Menu

Thermal and Electronic Transport Properties of the Half-Heusler Phase ScNiSb

Abstract

Share and Cite

Article Metrics

Article Access Statistics

Article Access Map by Country/Region

Further Information

Guidelines

MDPI Initiatives

Follow MDPI