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Open AccessArticle

Improving the Thermoelectric Properties of the Half-Heusler Compound VCoSb by Vanadium Vacancy

Key Laboratory of Fluid and Power Machinery of Ministry of Education, School of Materials Science & Engineering, Xihua University, Chengdu 610039, China
Clean Energy Materials and Engineering Center, School of Electronic Science and Engineering, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Authors to whom correspondence should be addressed.
Materials 2019, 12(10), 1637;
Received: 18 March 2019 / Revised: 2 May 2019 / Accepted: 16 May 2019 / Published: 20 May 2019
(This article belongs to the Special Issue Heusler and Half-Heusler Compounds)
The effects of V vacancy on the thermoelectric performance of the half-Heusler compound VCoSb have been investigated in this study. A certain amount of CoSb secondary phase is generated in the VCoSb matrix when the content of V vacancy is more than 0.1 at%. According to the results, a ZT value of 0.6, together with a power factor of 29 μW cm−1 K−2 at 873 K, were achieved for the nonstoichiometric sample V0.9CoSb. This proved that moderate V vacancy could improve the thermoelectric (TE) properties of VCoSb. The noticeable improvements are mainly owing to the incremental Seebeck coefficient, which may benefit from the optimized carrier concentration. However, too much V vacancy will result in more CoSb impurity and deteriorate the TE performances of VCoSb owing to the increased thermal conductivity. View Full-Text
Keywords: Half-Heusler; VCoSb; vacancy; nonstoichiometry; thermoelectric Half-Heusler; VCoSb; vacancy; nonstoichiometry; thermoelectric
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Huang, L.; Wang, J.; Mo, X.; Lei, X.; Ma, S.; Wang, C.; Zhang, Q. Improving the Thermoelectric Properties of the Half-Heusler Compound VCoSb by Vanadium Vacancy. Materials 2019, 12, 1637.

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