Design and Application of Spintronic Devices

A special issue of Magnetochemistry (ISSN 2312-7481). This special issue belongs to the section "Spin Crossover and Spintronics".

Deadline for manuscript submissions: 30 September 2025 | Viewed by 932

Special Issue Editor

School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, China
Interests: spintronics devices; new molecular magnets; low-dimensional materials; multifunctional materials
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Spintronic devices represent a leading field in modern electronics, allowing the spin of electrons—in addition to their charge—to store and process information. This emerging technology offers the potential to overcome the limitations of traditional electronic devices, such as energy consumption and scalability. By harnessing the quantum mechanical properties of electron spin, spintronics promises faster, more efficient, and more reliable computation. Applications range from high-performance memory devices to energy-efficient sensors and quantum computing systems. The design of spintronic devices involves the intricate manipulation of magnetic materials and nanostructures, often using novel concepts such as spin-transfer torque and magnetic tunnel junctions. As the field continues to evolve, spintronic devices are poised to revolutionize the electronics industry, leading to more sustainable and powerful computing solutions in the future.

Guest Editors

Dr. Lin Zhu
Guest Editor

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Keywords

  • spintronic devices
  • electron spin
  • magnetic materials
  • nanostructures spin
  • transfer torque
  • magnetic tunnel junctions
  • high-performance memory
  • energy-efficient sensors
  • quantum computing systems

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Published Papers (1 paper)

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Research

13 pages, 3859 KiB  
Article
Design of a 2–4 Decoder Based on All-Spin Logic and Magnetic Tunnel Junction
by Sen Wang, Yongfeng Zhang and Dan Shan
Magnetochemistry 2025, 11(2), 17; https://doi.org/10.3390/magnetochemistry11020017 - 15 Feb 2025
Viewed by 472
Abstract
A 2–4 decoder based on all-spin logic (ASL) and magnetic tunnel junction (MTJ) is proposed. The decoder employs five-input minority gates to realize three-input NOR gates, which reduces the circuit size compared to the three-input minority gates. Simultaneously, the inputs of the original [...] Read more.
A 2–4 decoder based on all-spin logic (ASL) and magnetic tunnel junction (MTJ) is proposed. The decoder employs five-input minority gates to realize three-input NOR gates, which reduces the circuit size compared to the three-input minority gates. Simultaneously, the inputs of the original and reverse variables are implemented by initializing the MTJ fixed layer magnetization in different directions, which avoids the use of inverters. In addition, the 2–4 decoder adopts a single-input single-fan-out (SISF) structure, which reduces the channel length. To illustrate the advantages of the five-input minority gate, inverter-free structure, and SISF structures in designing the proposed 2–4 decoder, a second 2–4 decoder is proposed that uses three-input minority gates, inverters, and a single-input multiple-fan-out structure. Compared with the second decoder, the first decoder has the layout area reduced to 37.9%, the total channel length reduced to 40.8%, and the number of clock cycles reduced to one-third. Importantly, the design methods used in this work, such as multi-input minority gates, SISF structure, and inverter-free structure, provide an interesting approach for designing large-scale ASL logic circuits. Full article
(This article belongs to the Special Issue Design and Application of Spintronic Devices)
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