Special Issue "Advances in Micro- and Nano-Electronics"

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Microelectronics".

Deadline for manuscript submissions: 15 August 2022 | Viewed by 2133

Special Issue Editors

Dr. Padmanabhan Balasubramanian
E-Mail Website
Guest Editor
Hardware and Embedded Systems Lab, School of Computer Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
Interests: arithmetic circuits; asynchronous circuits; fault tolerance; reliability; digital circuits; VLSI; logic design; logic circuits; redundancy; logic synthesis; approximate computing
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Lidia Dobrescu
E-Mail Website
Guest Editor
Faculty of Electronics, Telecommunications and Information Technology, Universitatea POLITEHNICA din București, 060042 București, Romania
Interests: nanodevices series
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

This Special Issue is primarily meant to serve as a collection of extended versions of selected papers presented at the IEEE 32nd International Conference on Microelectronics (MIEL 2021). Nevertheless, we welcome regular research or review articles on all aspects of microelectronics and nanoelectronics. The topics of interest include, but are not limited to, the following:

  • Digital circuits and systems
  • Analog and Mixed signal circuits and systems
  • RFIC and Microwave integrated circuits
  • Biomedical circuits and systems
  • Neuromorphic circuits and systems
  • Circuits and systems for emerging computing technologies
  • Digital signal processing
  • Hardware for artificial intelligence and machine learning
  • Hardware for secure applications
  • Low power electronics and green computing
  • Thermal-aware electronics design
  • System-on-chip and Network-on-chip
  • Wireless sensors and systems
  • Embedded electronics for Internet of Things (IoT)
  • Nanoelectronics devices and circuits
  • Beyond CMOS technologies viz. nanoelectronics, molecular electronics, spintronics and spin-based computing, quantum cellular automata, photonic integrated circuits, etc.
  • Fault-tolerant electronic design
  • Modeling reliability versus ageing in low power electronics
  • Analysis of radiation impact on reliability of electronic devices, circuits, and systems

Dr. Padmanabhan Balasubramanian
Prof. Dr. Lidia Dobrescu
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2000 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • digital circuits
  • analog circuits
  • mixed-signal design
  • digital signal processing
  • biomedical engineering
  • neuromorphic computing
  • artificial intelligence
  • machine learning
  • computer hardware
  • hardware security
  • fault tolerance
  • radiation
  • semiconductors
  • thermal design
  • low power design
  • energy efficiency
  • wireless communication
  • sensors
  • Internet of Things (IoT)
  • embedded systems
  • nanoelectronics
  • beyond CMOS
  • emerging technologies

Published Papers (3 papers)

Order results
Result details
Select all
Export citation of selected articles as:

Research

Article
Study of Breakdown Voltage Stability of Gas-Filled Surge Arresters in the Presence of Gamma Radiation
Electronics 2022, 11(15), 2447; https://doi.org/10.3390/electronics11152447 - 05 Aug 2022
Viewed by 334
Abstract
The results presented in this article relate to the study of the impact of gamma radiation on the breakdown voltage of gas-filled surge arrester manufactured by CITEL, Littelfuse and EPCOS at an operating voltage of 230 V. Radium was considered as a source [...] Read more.
The results presented in this article relate to the study of the impact of gamma radiation on the breakdown voltage of gas-filled surge arrester manufactured by CITEL, Littelfuse and EPCOS at an operating voltage of 230 V. Radium was considered as a source of gamma radiation in this research. The stability of breakdown voltage as well as the reliability of gas-filled surge arresters of different manufacturers were investigated using different statistical methods. This gas component operation was based on processes that lead to electrical breakdown and discharge in gas. The breakdown voltage has a stochastic nature, and it is a subject of certain distribution. One thousand voltage measurements of breakdown voltage were carried out for each value of the voltage increase rate, from 1 V/s up to 10 V/s, with and without the presence of additional gamma radiation. The detailed statistical analysis of the obtained experimental data was performed for both cases for all three GFSA types. Moreover, the cumulative distribution functions of breakdown voltage were presented with the applied Weibull distribution fit. The coefficient of correlation as well as Pearson χ2 test showed the strength of the relationship between the experimental distribution functions and the Weibull distribution fits. The values of the Weibull distribution coefficients for all voltage increase rates and for all components were also analyzed with and without gamma radiation. Full article
(This article belongs to the Special Issue Advances in Micro- and Nano-Electronics)
Show Figures

Figure 1

Communication
Commercial P-Channel Power VDMOSFET as X-ray Dosimeter
Electronics 2022, 11(6), 918; https://doi.org/10.3390/electronics11060918 - 16 Mar 2022
Viewed by 575
Abstract
The possibility of using commercial p-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray beams is [...] Read more.
The possibility of using commercial p-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray beams is examined. The eight gate voltages from 0 to 21 V are applied, and the dependence of the sensitivity on the gate voltage is well fitted using the proposed equation. Regarding X-ray energy, the sensitivity first increases and then decreases as a consequence of the behavior of the mass energy-absorption coefficients and is the largest for RQR8 beam. As the mass energy-absorption coefficients of SiO2 are not found in the literature, the mass energy-absorption coefficients of silicon are used. The behavior of irradiated transistors during annealing at room temperature without gate polarization is also considered. Full article
(This article belongs to the Special Issue Advances in Micro- and Nano-Electronics)
Show Figures

Figure 1

Article
Sensitivity Characterization of Multi-Band THz Metamaterial Sensor for Possible Virus Detection
Electronics 2022, 11(5), 699; https://doi.org/10.3390/electronics11050699 - 24 Feb 2022
Cited by 1 | Viewed by 546
Abstract
The recent COVID-19 pandemic has shown that there is a substantial need for high-precision reliable diagnostic tests able to detect extremely low virus concentrations nearly instantaneously. Since conventional methods are fairly limited, there is a need for an alternative method such as THz [...] Read more.
The recent COVID-19 pandemic has shown that there is a substantial need for high-precision reliable diagnostic tests able to detect extremely low virus concentrations nearly instantaneously. Since conventional methods are fairly limited, there is a need for an alternative method such as THz spectroscopy with the utilization of THz metamaterials. This paper proposes a method for sensitivity characterization, which is demonstrated on two chosen multi-band THz metamaterial sensors and samples of three different subtypes of the influenza A virus. Sensor models have been simulated in WIPL-D software in order to analyze their sensitivity both graphically and numerically around all resonant peaks in the presence of virus samples. The sensor with a sandwiched structure is shown to be more suitable for detecting extremely thin virus layers. The distribution of the electric field for this sensor suggests a possibility of controlling the two resonant modes independently. The sensor with cross-shaped patches achieves significantly better Q-factors and refractive sensitivities for both resonant peaks. The reasoning can be found in the wave–sample interaction enhancement due to the better electromagnetic field confinement. A high Q-factor of around 400 at the second resonant frequency makes the sensor with cross-shaped patches a promising candidate for potential applications in THz sensing. Full article
(This article belongs to the Special Issue Advances in Micro- and Nano-Electronics)
Show Figures

Figure 1

Back to TopTop