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Commercial P-Channel Power VDMOSFET as X-ray Dosimeter †

Faculty of Electronic Engineering, University of Niš, 18000 Nis, Serbia
Center of Microelectronic Technologies, Institute of Chemistry, Technology and Metallurgy, University of Belgrade, 11000 Belgrade, Serbia
Department of Electronics and Computer Technology, University of Granada, 18014 Granada, Spain
Department of Radiation and Environmental Protection, “Vinča” Institute of Nuclear Sciences, 11000 Belgrade, Serbia
IHP—Leibniz-Institut für Innovative Mikroelektronik, 15236 Frankfurt, Germany
Author to whom correspondence should be addressed.
This paper is an extension version of the conference paper: Ristić, G.S.; Jevtić, A.S.; Ilić, S.D.; Dimitrijević, S.; Veljković, S.; Palma, A.J.; Stanković, S.; Andjelković, M.S. Sensitivity of unbiased commercial p-channel power VDMOSFETs to X-ray radiation. In Proceedings of the IEEE 32nd International Conference on Microelectronics (MIEL 2021), Nis, Serbia, 12–14 September 2021; pp. 341–344.
Academic Editors: Padmanabhan Balasubramanian and Lidia Dobrescu
Electronics 2022, 11(6), 918;
Received: 13 December 2021 / Revised: 15 February 2022 / Accepted: 24 February 2022 / Published: 16 March 2022
(This article belongs to the Special Issue Advances in Micro- and Nano-Electronics)
The possibility of using commercial p-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray beams is examined. The eight gate voltages from 0 to 21 V are applied, and the dependence of the sensitivity on the gate voltage is well fitted using the proposed equation. Regarding X-ray energy, the sensitivity first increases and then decreases as a consequence of the behavior of the mass energy-absorption coefficients and is the largest for RQR8 beam. As the mass energy-absorption coefficients of SiO2 are not found in the literature, the mass energy-absorption coefficients of silicon are used. The behavior of irradiated transistors during annealing at room temperature without gate polarization is also considered. View Full-Text
Keywords: VDMOSFETs; X-ray; irradiation; sensitivity; fading VDMOSFETs; X-ray; irradiation; sensitivity; fading
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MDPI and ACS Style

Ristić, G.S.; Ilić, S.D.; Veljković, S.; Jevtić, A.S.; Dimitrijević, S.; Palma, A.J.; Stanković, S.; Andjelković, M.S. Commercial P-Channel Power VDMOSFET as X-ray Dosimeter. Electronics 2022, 11, 918.

AMA Style

Ristić GS, Ilić SD, Veljković S, Jevtić AS, Dimitrijević S, Palma AJ, Stanković S, Andjelković MS. Commercial P-Channel Power VDMOSFET as X-ray Dosimeter. Electronics. 2022; 11(6):918.

Chicago/Turabian Style

Ristić, Goran S., Stefan D. Ilić, Sandra Veljković, Aleksandar S. Jevtić, Strahinja Dimitrijević, Alberto J. Palma, Srboljub Stanković, and Marko S. Andjelković. 2022. "Commercial P-Channel Power VDMOSFET as X-ray Dosimeter" Electronics 11, no. 6: 918.

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