Next Article in Journal
New Modulation Technique in Smart Grid Interfaced Multilevel UPQC-PV Controlled via Fuzzy Logic Controller
Next Article in Special Issue
Study of Breakdown Voltage Stability of Gas-Filled Surge Arresters in the Presence of Gamma Radiation
Previous Article in Journal
An Open-Source System for Generating and Computer Grading Traditional Non-Coding Assignments
Previous Article in Special Issue
Sensitivity Characterization of Multi-Band THz Metamaterial Sensor for Possible Virus Detection
 
 
Communication

Commercial P-Channel Power VDMOSFET as X-ray Dosimeter †

1
Faculty of Electronic Engineering, University of Niš, 18000 Nis, Serbia
2
Center of Microelectronic Technologies, Institute of Chemistry, Technology and Metallurgy, University of Belgrade, 11000 Belgrade, Serbia
3
Department of Electronics and Computer Technology, University of Granada, 18014 Granada, Spain
4
Department of Radiation and Environmental Protection, “Vinča” Institute of Nuclear Sciences, 11000 Belgrade, Serbia
5
IHP—Leibniz-Institut für Innovative Mikroelektronik, 15236 Frankfurt, Germany
*
Author to whom correspondence should be addressed.
This paper is an extension version of the conference paper: Ristić, G.S.; Jevtić, A.S.; Ilić, S.D.; Dimitrijević, S.; Veljković, S.; Palma, A.J.; Stanković, S.; Andjelković, M.S. Sensitivity of unbiased commercial p-channel power VDMOSFETs to X-ray radiation. In Proceedings of the IEEE 32nd International Conference on Microelectronics (MIEL 2021), Nis, Serbia, 12–14 September 2021; pp. 341–344. https://doi.org/10.1109/MIEL52794.2021.9569096.
Academic Editors: Padmanabhan Balasubramanian and Lidia Dobrescu
Electronics 2022, 11(6), 918; https://doi.org/10.3390/electronics11060918
Received: 13 December 2021 / Revised: 15 February 2022 / Accepted: 24 February 2022 / Published: 16 March 2022
(This article belongs to the Special Issue Advances in Micro- and Nano-Electronics)
The possibility of using commercial p-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray beams is examined. The eight gate voltages from 0 to 21 V are applied, and the dependence of the sensitivity on the gate voltage is well fitted using the proposed equation. Regarding X-ray energy, the sensitivity first increases and then decreases as a consequence of the behavior of the mass energy-absorption coefficients and is the largest for RQR8 beam. As the mass energy-absorption coefficients of SiO2 are not found in the literature, the mass energy-absorption coefficients of silicon are used. The behavior of irradiated transistors during annealing at room temperature without gate polarization is also considered. View Full-Text
Keywords: VDMOSFETs; X-ray; irradiation; sensitivity; fading VDMOSFETs; X-ray; irradiation; sensitivity; fading
Show Figures

Figure 1

MDPI and ACS Style

Ristić, G.S.; Ilić, S.D.; Veljković, S.; Jevtić, A.S.; Dimitrijević, S.; Palma, A.J.; Stanković, S.; Andjelković, M.S. Commercial P-Channel Power VDMOSFET as X-ray Dosimeter. Electronics 2022, 11, 918. https://doi.org/10.3390/electronics11060918

AMA Style

Ristić GS, Ilić SD, Veljković S, Jevtić AS, Dimitrijević S, Palma AJ, Stanković S, Andjelković MS. Commercial P-Channel Power VDMOSFET as X-ray Dosimeter. Electronics. 2022; 11(6):918. https://doi.org/10.3390/electronics11060918

Chicago/Turabian Style

Ristić, Goran S., Stefan D. Ilić, Sandra Veljković, Aleksandar S. Jevtić, Strahinja Dimitrijević, Alberto J. Palma, Srboljub Stanković, and Marko S. Andjelković. 2022. "Commercial P-Channel Power VDMOSFET as X-ray Dosimeter" Electronics 11, no. 6: 918. https://doi.org/10.3390/electronics11060918

Find Other Styles
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Back to TopTop