Special Issue "Dislocations in Heterostructures"

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Crystal Engineering".

Deadline for manuscript submissions: closed (20 October 2019).

Special Issue Editor

Dr. Sokolov Leonid Valentinovich
E-Mail Website
Guest Editor
Russian Academy of Sciences, Novosibirsk, Russia
Interests: GeSi/Si heterostructures; molecular beam epitaxy; structure of epitaxial films; dislocation movement

Special Issue Information

Dear Colleagues,

We are delighted to invite you to submit an article to the Special Issue of Crystals, “Dislocations in Heterostructures”.

Heterostructures are known as the basis for a wide class of semiconductor devices. There are solar cells, sensors, devices for information processing, and so on among them. Firstly, these are the matched heterostructures that have the same substrate crystal lattice and grown film parameters and type.

There is also considerable interest in mismatched heterostructures. However, their use is complicated due to a large number of structural defects. Dislocations are an obligatory attribute of a heterostructure, if the film thickness is sufficient for their introduction. Misfit dislocations play a positive role as they create an interface between materials with different crystal lattices. However, their introduction is followed by the emergence of the dislocations from crossing a film from an interface to a surface (threading dislocations). Each misfit dislocation has two threading  dislocations on its ends. Such dislocations, taking place in the active device area, worsen its characteristics or make its functions impossible. Thus, the main efforts are pooled to decrease the threading dislocations density. The success in this direction depends on taking into account many factors. Success in this direction depends on accounting for many factors. Among them are the speed of the dislocation movement, their interaction and dislocation reactions, and so on.

The Special Issue, “Dislocations in Heterostructures”, is aimed at publishing novel data concerning the mechanism of dislocations nucleation, movement, their interaction, and dislocation reactions in heterostructures. 

Dr. Sokolov Leonid Valentinovich
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Relief of heterostructures
  • Mechanisms of dislocations nucleation
  • Misfit dislocations
  • Threading dislocations
  • Interaction of dislocations

Published Papers (2 papers)

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Research

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Open AccessArticle
Fabrication of Pyramid Structure Substrate Utilized for Epitaxial Growth Free-Standing GaN
Crystals 2019, 9(11), 547; https://doi.org/10.3390/cryst9110547 - 23 Oct 2019
Abstract
Metal–organic chemical vapor deposition (MOCVD)-grown GaN on sapphire substrate was etched by hot phosphoric acids. Pyramid structures were obtained in the N-polar face of the MOCVD–GaN. Details of the formation process and morphology of the structures were discussed. The crystallographic plane index of [...] Read more.
Metal–organic chemical vapor deposition (MOCVD)-grown GaN on sapphire substrate was etched by hot phosphoric acids. Pyramid structures were obtained in the N-polar face of the MOCVD–GaN. Details of the formation process and morphology of the structures were discussed. The crystallographic plane index of the pyramid facet was calculated dependent on the symmetry of the wurtzite crystal structure and the tilt angle. The substrates with pyramid structures were utilized in subsequent hydride vapor phase epitaxy (HVPE) growth of GaN. Free-standing crystals were obtained, while HVPE-grown GaN achieved a certain thickness. Raman spectroscopy was employed to obtain the stress conditions of the HVPE–GaN without and with sapphire substrate. The mechanism of the self-separation process was discussed. This facile wet etching method may provide a simple way to acquire free-standing GaN by HVPE growth. Full article
(This article belongs to the Special Issue Dislocations in Heterostructures)
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Review

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Open AccessReview
Interaction of Dislocations and Interfaces in Crystalline Heterostructures: A Review of Atomistic Studies
Crystals 2019, 9(11), 584; https://doi.org/10.3390/cryst9110584 - 07 Nov 2019
Abstract
Interfaces in heterostructures of crystalline materials could strongly affect the slip of dislocations. Such interfaces have become one of the most popular methods to tailor material strength and ductility. This review focuses on the interaction of dislocations and interfaces in heterostructures, in which [...] Read more.
Interfaces in heterostructures of crystalline materials could strongly affect the slip of dislocations. Such interfaces have become one of the most popular methods to tailor material strength and ductility. This review focuses on the interaction of dislocations and interfaces in heterostructures, in which at least one component is metallic, as investigated by molecular dynamics, in order to systematically summarize our understanding about how dislocations interact with the interfaces. All the possible heterostructures of metallic materials are covered, such as twin boundaries, grain boundaries, bi-metal interfaces and metal/non-metal interfaces. Dislocations may either penetrate the interfaces by inducing steps into the interfaces or dissociate within the interfaces, depending on the type and orientation of the interface as well as the applied strain. Related dislocation interactions at the interface are also presented. In addition, we also discuss the effect of dislocation types, of applied strain and of the deformation method on the interaction of dislocations and interfaces. Full article
(This article belongs to the Special Issue Dislocations in Heterostructures)
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