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Crystals
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Dislocations in Heterostructures
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Dislocations in Heterostructures

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Crystal Engineering".

Deadline for manuscript submissions: closed (1 June 2020) | Viewed by 25746

Special Issue Editor

Dr. Sokolov Leonid Valentinovich

E-Mail Website
Guest Editor
Russian Academy of Sciences, Novosibirsk, Russia
Interests: GeSi/Si heterostructures; molecular beam epitaxy; structure of epitaxial films; dislocation movement

Special Issue Information

Dear Colleagues,

We are delighted to invite you to submit an article to the Special Issue of Crystals, “Dislocations in Heterostructures”.

Heterostructures are known as the basis for a wide class of semiconductor devices. There are solar cells, sensors, devices for information processing, and so on among them. Firstly, these are the matched heterostructures that have the same substrate crystal lattice and grown film parameters and type.

There is also considerable interest in mismatched heterostructures. However, their use is complicated due to a large number of structural defects. Dislocations are an obligatory attribute of a heterostructure, if the film thickness is sufficient for their introduction. Misfit dislocations play a positive role as they create an interface between materials with different crystal lattices. However, their introduction is followed by the emergence of the dislocations from crossing a film from an interface to a surface (threading dislocations). Each misfit dislocation has two threading  dislocations on its ends. Such dislocations, taking place in the active device area, worsen its characteristics or make its functions impossible. Thus, the main efforts are pooled to decrease the threading dislocations density. The success in this direction depends on taking into account many factors. Success in this direction depends on accounting for many factors. Among them are the speed of the dislocation movement, their interaction and dislocation reactions, and so on.

The Special Issue, “Dislocations in Heterostructures”, is aimed at publishing novel data concerning the mechanism of dislocations nucleation, movement, their interaction, and dislocation reactions in heterostructures. 

Dr. Sokolov Leonid Valentinovich
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Relief of heterostructures
  • Mechanisms of dislocations nucleation
  • Misfit dislocations
  • Threading dislocations
  • Interaction of dislocations

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Published Papers (6 papers)

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Research

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13 pages, 4791 KiB  
Article
Comparative Study of ZnO Nanostructures Grown on Variously Orientated GaN and AlxGa1−xN: The Role of Polarization, and Surface Pits
by Zhiyuan Gao, Liwei Lu, Xiaowei Xue, Jiangjiang Li, Lihuan Zhao, Dilshad Ahmad and Hongda Li
Crystals 2019, 9(12), 663; https://doi.org/10.3390/cryst9120663 - 9 Dec 2019
Cited by 2 | Viewed by 2736
Abstract
Through comparing ZnO directly grown on the substrates of a-plane, c-plane, and (11-22) plane GaN and AlxGa1−xN (0.06 ≤ x ≤ 1), the roles of different factors that may influence growth have been studied. Seeded by surface pits, ZnO [...] Read more.
Through comparing ZnO directly grown on the substrates of a-plane, c-plane, and (11-22) plane GaN and AlxGa1−xN (0.06 ≤ x ≤ 1), the roles of different factors that may influence growth have been studied. Seeded by surface pits, ZnO nanowire (NW) preferentially grew along the polarized direction on top of the nonpolar GaN (laterally aligned), polar GaN and AlGaN (vertically aligned), and semipolar GaN (obliquely upward aligned). Nanosheets were easily formed when the polarized surface of the AlGaN film was not intact. The kinetic effect of polarization must be considered to explain the high aspect ratio of NWs along the polarized direction. It was found that dislocation affected NW growth through the surface pits, which provided excellent nucleation sites. If the surface pits on GaN could be controlled to distribute uniformly, self-organized ZnO NW array could be controllably and directly grown on GaN. Moreover, surface pits could also seed for nanosheet growth in AlN, since Al(OH)4− would presumably bind to the Zn2+ terminated surface and suppress the kinetic effects of polarization. Full article
(This article belongs to the Special Issue Dislocations in Heterostructures)
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9 pages, 2351 KiB  
Article
Origin of Nanoscale Incipient Plasticity in GaAs and InP Crystal
by Dariusz Chrobak, Michał Trębala, Artur Chrobak and Roman Nowak
Crystals 2019, 9(12), 651; https://doi.org/10.3390/cryst9120651 - 7 Dec 2019
Cited by 6 | Viewed by 2791
Abstract
In this article, we exhibit the influence of doping on nanoindentation-induced incipient plasticity in GaAs and InP crystals. Nanoindentation experiments carried out on a GaAs crystal show a reduction in contact pressure at the beginning of the plastic deformation caused by an increase [...] Read more.
In this article, we exhibit the influence of doping on nanoindentation-induced incipient plasticity in GaAs and InP crystals. Nanoindentation experiments carried out on a GaAs crystal show a reduction in contact pressure at the beginning of the plastic deformation caused by an increase in Si doping. Given that the substitutional Si defects cause a decrease in the pressure of the GaAs-I → GaAs-II phase transformation, we concluded that the elastic–plastic transition in GaAs is a phase-change-driven phenomenon. In contrast, Zn- and S-doping of InP crystals cause an increase in contact pressure at the elastic–plastic transition, revealing its dislocation origin. Our mechanical measurements were supplemented by nanoECR experiments, which showed a significant difference in the flow of the electrical current at the onset of plastic deformation of the semiconductors under consideration. Full article
(This article belongs to the Special Issue Dislocations in Heterostructures)
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12 pages, 8890 KiB  
Article
LT-AlSb Interlayer as a Filter of Threading Dislocations in GaSb Grown on (001) GaAs Substrate Using MBE
by Agata Jasik, Jacek Ratajczak, Iwona Sankowska, Andrzej Wawro, Dariusz Smoczyński and Krzysztof Czuba
Crystals 2019, 9(12), 628; https://doi.org/10.3390/cryst9120628 - 28 Nov 2019
Cited by 2 | Viewed by 3233
Abstract
We report on the role of AlSb material in the reduction of threading dislocation density (TDD) in the GaSb/AlSb/GaAs system. The AlSb layers were grown using low-temperature (LT) MBE, exploiting the interfacial misfit (IMF) dislocation array. AlSb layers with four different thicknesses in [...] Read more.
We report on the role of AlSb material in the reduction of threading dislocation density (TDD) in the GaSb/AlSb/GaAs system. The AlSb layers were grown using low-temperature (LT) MBE, exploiting the interfacial misfit (IMF) dislocation array. AlSb layers with four different thicknesses in the range of 1–30 nm were investigated. The results showed the inhibiting role of LT-AlSb layers in the reduction of TDD. Values of TDD as low as 2.2 × 106 and 6.3 × 106 cm−2 for samples with thin and thick AlSb layers were obtained, respectively. The filtering role of AlSb material was proven despite the IMF-AlSb/GaAs interface’s imperfectness caused by the disturbance of a 90° dislocation periodic array by, most likely, 60° dislocations. The dislocation lines confined to the region of AlSb material were visible in HRTEM images. The highest crystal quality and smoother surface of 1.0 μm GaSb material were obtained using 9 nm thick AlSb interlayer. Unexpectedly, the comparative analysis of the results obtained for the GaSb/LT-AlSb/GaAs heterostructure and our best results for the GaSb/GaAs system showed that the latter can achieve both higher crystal quality and lower dislocation density. Full article
(This article belongs to the Special Issue Dislocations in Heterostructures)
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9 pages, 1595 KiB  
Article
Fabrication of Pyramid Structure Substrate Utilized for Epitaxial Growth Free-Standing GaN
by Ruixian Yu, Baoguo Zhang, Lei Zhang, Yongzhong Wu, Haixiao Hu, Lei Liu, Yongliang Shao and Xiaopeng Hao
Crystals 2019, 9(11), 547; https://doi.org/10.3390/cryst9110547 - 23 Oct 2019
Cited by 4 | Viewed by 2985
Abstract
Metal–organic chemical vapor deposition (MOCVD)-grown GaN on sapphire substrate was etched by hot phosphoric acids. Pyramid structures were obtained in the N-polar face of the MOCVD–GaN. Details of the formation process and morphology of the structures were discussed. The crystallographic plane index of [...] Read more.
Metal–organic chemical vapor deposition (MOCVD)-grown GaN on sapphire substrate was etched by hot phosphoric acids. Pyramid structures were obtained in the N-polar face of the MOCVD–GaN. Details of the formation process and morphology of the structures were discussed. The crystallographic plane index of the pyramid facet was calculated dependent on the symmetry of the wurtzite crystal structure and the tilt angle. The substrates with pyramid structures were utilized in subsequent hydride vapor phase epitaxy (HVPE) growth of GaN. Free-standing crystals were obtained, while HVPE-grown GaN achieved a certain thickness. Raman spectroscopy was employed to obtain the stress conditions of the HVPE–GaN without and with sapphire substrate. The mechanism of the self-separation process was discussed. This facile wet etching method may provide a simple way to acquire free-standing GaN by HVPE growth. Full article
(This article belongs to the Special Issue Dislocations in Heterostructures)
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Review

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19 pages, 4363 KiB  
Review
Dislocation Analysis in SiGe Heterostructures by Large-Angle Convergent Beam Electron Diffraction
by Heiko Groiss
Crystals 2020, 10(1), 5; https://doi.org/10.3390/cryst10010005 - 19 Dec 2019
Cited by 5 | Viewed by 8393
Abstract
Dislocations play a crucial role in self-organization and strain relaxation mechanisms in SiGe heterostructures. In most cases, they should be avoided, and different strategies exist to exploit their nucleation properties in order to manipulate their position. In either case, detailed knowledge about their [...] Read more.
Dislocations play a crucial role in self-organization and strain relaxation mechanisms in SiGe heterostructures. In most cases, they should be avoided, and different strategies exist to exploit their nucleation properties in order to manipulate their position. In either case, detailed knowledge about their exact Burgers vectors and possible dislocation reactions are necessary to optimize the fabrication processes and the properties of SiGe materials. In this review a brief overview of the dislocation mechanisms in the SiGe system is given. The method of choice for dislocation characterization is transmission electron microscopy. In particular, the article provides a detailed introduction into large-angle convergent-beam electron diffraction, and gives an overview of different application examples of this method on SiGe structures and related systems. Full article
(This article belongs to the Special Issue Dislocations in Heterostructures)
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14 pages, 2028 KiB  
Review
Interaction of Dislocations and Interfaces in Crystalline Heterostructures: A Review of Atomistic Studies
by Zhibo Zhang, Cancan Shao, Shuncheng Wang, Xing Luo, Kaihong Zheng and Herbert M. Urbassek
Crystals 2019, 9(11), 584; https://doi.org/10.3390/cryst9110584 - 7 Nov 2019
Cited by 23 | Viewed by 5163
Abstract
Interfaces in heterostructures of crystalline materials could strongly affect the slip of dislocations. Such interfaces have become one of the most popular methods to tailor material strength and ductility. This review focuses on the interaction of dislocations and interfaces in heterostructures, in which [...] Read more.
Interfaces in heterostructures of crystalline materials could strongly affect the slip of dislocations. Such interfaces have become one of the most popular methods to tailor material strength and ductility. This review focuses on the interaction of dislocations and interfaces in heterostructures, in which at least one component is metallic, as investigated by molecular dynamics, in order to systematically summarize our understanding about how dislocations interact with the interfaces. All the possible heterostructures of metallic materials are covered, such as twin boundaries, grain boundaries, bi-metal interfaces and metal/non-metal interfaces. Dislocations may either penetrate the interfaces by inducing steps into the interfaces or dissociate within the interfaces, depending on the type and orientation of the interface as well as the applied strain. Related dislocation interactions at the interface are also presented. In addition, we also discuss the effect of dislocation types, of applied strain and of the deformation method on the interaction of dislocations and interfaces. Full article
(This article belongs to the Special Issue Dislocations in Heterostructures)
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