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Crystals
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Growth, Structural Identification, and Characterization of Semiconductor Alloys and Low-Dimensional...
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Growth, Structural Identification, and Characterization of Semiconductor Alloys and Low-Dimensional Heterostructures

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Crystalline Metals and Alloys".

Deadline for manuscript submissions: 10 July 2025 | Viewed by 1044

Special Issue Editor

Prof. Dr. Devki Talwar

E-Mail Website
Guest Editor
1. Department of Physics, University of North Florida, 1 UNF Drive, Jacksonville, FL 32224-7699, USA
2. Department of Physics, Indiana University of Pennsylvania, 975 Oakland Avenue, 56 Weyandt Hall, Indiana, PA 15705-1087, USA
Interests: physics of semiconductors; lattice dynamics of low-dimensional semiconductors; band structure calculations; identifications and characterization of defects; infrared and Raman scattering spectroscopy; optical characterization of defects in semiconductors
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Structural, electrical, phonon, and thermodynamic characteristics of bulk semiconductor alloys and heterostructures (multi-quantum wells (MQWs) and superlattices (SLs)) have provided strong foundations for the advancement of modern technology. These efforts have helped scientists and engineers to design electronic devices to meet growing societal needs, viz., photovoltaics, fuel cells, batteries, thermo-electrics, and photonics as well as information and data storage for biological and medical applications. This Special Issue on “Growth, Structural Identification, and Characterization of Semiconductor Alloys and Low-Dimensional Heterostructures” deals with different aspects of novel bulk elemental (group IV) and/or compound semiconductors (e.g., III-V, III-N, II-VI, and IV-IV), their alloys, and low-dimensional heterostructures—especially for comprehending their structural, electronic, vibrational, and thermal transport characteristics. 

Prof. Dr. Devki Talwar
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • epitaxial growth including (MBE, CVD, MOCVD, etc.)
  • group-IV elemental semiconductors and alloys
  • III-V, III-N, II-VI, and IV-IV compound semiconductors and alloys
  • designing low-dimensional heterostructures (MQWs, SLs, etc.) for devices
  • IR, Raman scattering, photoluminescence, spectroscopic ellipsometry, characterization techniques, etc.
  • simulations of structural, electronic, vibrational, and thermal transport in MQWs and SLs

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Published Papers (2 papers)

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Research

18 pages, 7452 KiB  
Article
Anisotropy of Voltage Sensitivity of Bow-Tie Microwave Diodes Containing 2DEG Layer
by Algirdas Sužiedėlis, Steponas Ašmontas, Jonas Gradauskas, Aurimas Čerškus, Andžej Lučun, Maksimas Anbinderis and Ihor Zharchenko
Crystals 2025, 15(4), 367; https://doi.org/10.3390/cryst15040367 - 17 Apr 2025
Viewed by 134
Abstract
Microwave Bow-Tie Diodes operate across a broad frequency range, including THz radiation detection and THz imaging applications. When fabricated using modulation-doped structures, these diodes exhibit enhanced detection properties that are best characterized by voltage sensitivity. The sensitivity is influenced by multiple factors, including [...] Read more.
Microwave Bow-Tie Diodes operate across a broad frequency range, including THz radiation detection and THz imaging applications. When fabricated using modulation-doped structures, these diodes exhibit enhanced detection properties that are best characterized by voltage sensitivity. The sensitivity is influenced by multiple factors, including diode design, semiconductor material quality, and the characteristics of the ohmic contacts. In this study, we examine how the electrical properties of modulation-doped bow-tie diodes are affected by their orientation relative to the crystallographic axes. Extensive investigations on various bow-tie diodes exposed to broadband microwave radiation, both in darkness and under white and infrared light illumination, enabled us to identify the optimal diode designs and illumination conditions for maximizing sensitivity to electromagnetic radiation. Based on our findings, we provide recommendations for diode design and illumination conditions to enhance the diode’s sensitivity to microwave radiation while minimizing illumination-induced effects on electrical properties. Full article
(This article belongs to the Special Issue Growth, Structural Identification, and Characterization of Semiconductor Alloys and Low-Dimensional Heterostructures)
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21 pages, 8328 KiB  
Article
Impact of Buffer Layer on Electrical Properties of Bow-Tie Microwave Diodes on the Base of MBE-Grown Modulation-Doped Semiconductor Structure
by Algirdas Sužiedėlis, Steponas Ašmontas, Jonas Gradauskas, Aurimas Čerškus, Aldis Šilėnas and Andžej Lučun
Crystals 2025, 15(1), 50; https://doi.org/10.3390/cryst15010050 - 3 Jan 2025
Cited by 2 | Viewed by 616
Abstract
Bow-tie diodes on the base of modulation-doped semiconductor structures are often used to detect radiation in GHz to THz frequency range. The operation of the bow-tie microwave diodes is based on carrier heating phenomena in an epitaxial semiconductor structure with broken geometrical symmetry. [...] Read more.
Bow-tie diodes on the base of modulation-doped semiconductor structures are often used to detect radiation in GHz to THz frequency range. The operation of the bow-tie microwave diodes is based on carrier heating phenomena in an epitaxial semiconductor structure with broken geometrical symmetry. However, the electrical properties of bow-tie diodes are highly dependent on the purity of the grown epitaxial layer—specifically, the minimal number of defects—and the quality of the ohmic contacts. The quality of MBE-grown semiconductor structure depends on the presence of a buffer layer between a semiconductor substrate and an epitaxial layer. In this paper, we present an investigation of the electrical and optical properties of planar bow-tie microwave diodes fabricated using modulation-doped semiconductor structures grown via the MBE technique, incorporating either a GaAs buffer layer or a GaAs–AlGaAs super-lattice buffer between the semi-insulating substrate and the active epitaxial layer. These properties include voltage sensitivity, electrical resistance, I–V characteristic asymmetry, nonlinearity coefficient, and photoluminescence. The investigation revealed that the buffer layer, as well as the illumination with visible light, strongly influences the properties of the bow-tie diodes. Full article
(This article belongs to the Special Issue Growth, Structural Identification, and Characterization of Semiconductor Alloys and Low-Dimensional Heterostructures)
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