III-Nitride-Based Light-Emitting Devices
A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Materials for Energy Applications".
Deadline for manuscript submissions: closed (10 February 2023) | Viewed by 24460
Special Issue Editors
Interests: InGaN; micro-LEDs; III-nitride semiconductors; MOCVD growth; optoelectronics; semiconductor materials and devices
Special Issue Information
Dear Colleagues,
III-nitride semiconductors are wide bandgap materials, and their alloys can cover a wide spectral range, from ultraviolet to infrared. The invention and development of efficient InGaN-based blue light-emitting diodes (LEDs) represents a tremendously successful use of these semiconductors. High-performance devices such as violet/blue/green LEDs and laser diodes (LDs) have been commercialized using the established technology of epitaxial growth and device processing.
Advanced epitaxial growth and device processing technologies should be explored to develop novel light-emitting devices. These technologies can contribute to developing high-performance devices such as micro-LEDs, visible light-based communication, and UV-LEDs. Many emerging applications of light-emitting devices have been demonstrated; therefore, proper LED epitaxial growth and processing techniques must be developed.
We would like to invite researchers to contribute to this Special Issue. The potential topics include, but are not limited to:
- Long-wavelength emissions of InGaN-based LEDs;
- Micro-LEDs for displays and light communication;
- Visible/UV LDs;
- UV LEDs;
- Low-dimensional structures/nanostructures;
- LED processing;
- Material growth on novel substrates;
- LED epitaxy and characterization.
Dr. Daisuke Iida
Dr. Zhe Zhuang
Guest Editors
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Keywords
- light-emitting diodes (LEDs)
- micro-LEDs
- laser diodes (LDs)
- UV LEDs
- InGaN
- AlGaN
- nanostructures
- epitaxial growth
- MOVPE
- MBE
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