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Crystals
Special Issues
Silicon-Based Photovoltaic Materials and Devices
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Silicon-Based Photovoltaic Materials and Devices

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Materials for Energy Applications".

Deadline for manuscript submissions: closed (30 November 2023) | Viewed by 1618

Special Issue Editors

Dr. Guanghong Wang

E-Mail Website
Guest Editor
Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, China
Interests: silicon-based solar cell; transparent conductive oxide; passivation layers; solar energy conversion
Prof. Dr. Chunlan Zhou

E-Mail Website
Guest Editor
Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, China
Interests: crystal silicon photovoltaics; defects; metastability; diffusion in semiconductors; material characterization
Dr. Libin Mo

E-Mail
Guest Editor
Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, China
Interests: silicon-based solar cell; metal electrode; interfacial contact; sintering aids; conductive paste

Special Issue Information

Dear Colleagues,

The aim of the journal Crystals is to disseminate research, development, application, measurement on materials science and technology related to silicon-based solar cells. Of particular interest are the silicon heterojunction solar cell, passivated emitter and rear cell and tunnel oxide passivated contact solar cell.

Dr. Guanghong Wang
Prof. Dr. Chunlan Zhou
Dr. Libin Mo
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • silicon-based solar cell
  • transparent conductive oxide
  • solar energy conversion
  • photovoltaic modules
  • photovoltaic system
  • bifacial photovoltaic module
  • inversion layer
  • surface passivation
  • AFORS-HET

Published Papers (1 paper)

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Research

11 pages, 3804 KiB  
Article
Composition Dependence Structural and Optical Properties of Silicon Germanium (SiχGe1−χ) Thin Films
by Syafiqa Nasir, Fuei Pien Chee, Bablu Kumar Ghosh, Muhammad Izzuddin Rumaling, Rosfayanti Rasmidi, Mivolil Duinong and Floressy Juhim
Crystals 2023, 13(5), 791; https://doi.org/10.3390/cryst13050791 - 9 May 2023
Cited by 1 | Viewed by 1407
Abstract
This study investigates the structural and optical characteristics of Silicon Germanium (SiGe) thin films with varying compositions and annealing temperatures for potential use in electronic and optoelectronic devices. Si0.8Ge0.2 and Si0.9Ge0.1 films were deposited onto a high-temperature [...] Read more.
This study investigates the structural and optical characteristics of Silicon Germanium (SiGe) thin films with varying compositions and annealing temperatures for potential use in electronic and optoelectronic devices. Si0.8Ge0.2 and Si0.9Ge0.1 films were deposited onto a high-temperature quartz substrate and annealed at 600 °C, 700 °C, and 800 °C before being evaluated using an X-Ray Diffractometer (XRD), Atomic Force Microscopy (AFM), and a UV-Vis Spectrometer for structural and optical properties. The results show that increasing the annealing temperature results in an increase in crystalline size for both compositions. The transmittance for Si0.8Ge0.2 decreases slightly with increasing temperature, while Si0.9Ge0.1 remains constant. The optical band gap for Si0.9Ge0.1 thin film is 5.43 eV at 800 °C, while Si0.8Ge0.2 thin film is 5.6 eV at the same annealing temperature. XRD data and surface analysis reveal significant differences between the band edges of SiGe nano-structure materials and bulk crystals. However, the possibility of a SiGe nano-crystal large band gap requires further investigation based on our study and related research works. Full article
(This article belongs to the Special Issue Silicon-Based Photovoltaic Materials and Devices)
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