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Synaptic Devices Using Nanomaterials for Neuromorphic System
This special issue belongs to the section “Surface Characterization, Deposition and Modification“.
Special Issue Information
Dear Colleagues,
Neuromorphic system is actively being studied as an alternative to overcome the von Neumann data bottleneck. The weight update in synaptic devices including two-terminal and three-terminal types is very important for neuromorphic system on the hardware level. Low energy, a lot of multi-level conductance levels, high dynamic range, high endurance, long retention, and linear and symmetric weight updates are important requirements for a good synaptic device. By introducing nanomaterials such as nanoparticles, organic molecules, inorganic–organic hybrids and composites, ferroelectricity, alloy materials, quantum dots, graphene, 2D materials, as well as conventional oxide and nitride materials, the synaptic device’s performances can be enhanced. Synaptic devices include a transistor-type three-terminal, PRAM, MRAM, as well as two-terminal memristors for this Special Issue.
Prof. Sungjun Kim
Guest Editor
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Keywords
- Memristor
- Resistive switching
- Synaptic devices
- Neuromorphic
- Nanomaterials
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