Advanced Semiconductor/Memory Materials and Devices

Dear Colleagues,

There is always a need for high-performance information and data storage systems, which emerging memory technology has made possible. With new developments in architecture innovation and performance optimization, memory device design, systems, and materials play an essential role in emerging memory technology. This Special Issue mainly focuses on the advances in materials and devices for memory applications. We welcome articles, communications, and reviews on the state of the art in emerging memory applications, such as advanced fabrication based on various materials and memory types, improvement of electrical performances and functions of memory devices, as well as implementation for neuromorphic computing.

The potential topics include, but are not limited to, the following:

• Promising memory devices and technology, such as resistive random-access memory (RRAM), ferroelectric RAM (FRAM), magnetoresistive RAM (MRAM), phase-change memory (PCM), spin-transfer torque RAM (STTRAM), FeFET memory, etc.;
• Functional materials for memory applications, including metal and metal oxides/nitrides, silicon and titanium compounds, thin films, nanoparticles, polymers, organic/inorganic–organic hybrids and composites, ferroelectric materials, graphene, carbon nanotubes, carbon-based materials, quantum dots, perovskites, phase change and 2D materials, etc.

Prof. Dr. Sungjun Kim
Dr. Jung-Kyu Lee
Guest Editors

Manuscript Submission Information

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