Special Issue "Atomic Layer Deposition of Thin-Films"

A special issue of Coatings (ISSN 2079-6412).

Deadline for manuscript submissions: closed (31 December 2020).

Special Issue Editors

Dr. Bonggeun Shong
E-Mail Website
Guest Editor
Department of Chemical Engineering, Hongik University, Seoul 04066, Korea
Interests: surface chemistry; atomic layer deposition; area-selective atomic layer deposition; molecular layer deposition
Dr. Woo-Hee Kim
E-Mail Website
Co-Guest Editor
Department of Materials Science and Chemical Engineering, Hanyang University, Ansan 15588, Korea
Interests: atomic layer deposition; atomic layer etching; area-selective atomic layer deposition; bottom-up nanofabrication; semiconductor processing

Special Issue Information

Dear Colleagues,

Atomic layer deposition (ALD) is a thin film deposition technique based on sequential surface reactions of gas phase precursors and reactants. Currently, ALD is adopted as an essential process in the fabrication of microelectronic devices, and its applications toward controlled synthesis of various nanomaterials are expanding. Several techniques related to ALD are also emerging, such as atomic layer etching (ALE), area-selective atomic layer deposition (AS-ALD), and molecular layer deposition (MLD). Fundamental aspects of ALD, such as surface chemistry and nucleation theory, still demand further research.

The topics of interest of this Special Issue include, but are not limited to:

  • Deposition of thin films by ALD
  • Atomic layer etching (ALE)
  • Area-selective ALD (AS-ALD)
  • Molecular layer deposition (MLD)
  • Applications of ALD materials
  • Applications of ALD processes
  • Fundamental aspects of ALD
Prof. Bonggeun Shong
Prof. Woo-Hee Kim
Guest Editors

Manuscript Submission Information

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Keywords

  • atomic layer deposition (ALD)
  • atomic layer etching (ALE)
  • area-selective atomic layer deposition (AS-ALD)
  • molecular layer deposition (MLD)

Published Papers (4 papers)

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Research

Article
Plasma-Enhanced Atomic Layer Deposition of Zirconium Oxide Thin Films and Its Application to Solid Oxide Fuel Cells
Coatings 2021, 11(3), 362; https://doi.org/10.3390/coatings11030362 - 22 Mar 2021
Cited by 2 | Viewed by 747
Abstract
Zirconium oxides were deposited using plasma-enhanced atomic layer deposition (PEALD) involving (2-(N-methylamino)1-MethylEthyleneCyclopentadienyl)Bis(DiMethylAmino)Zr (abbreviated as CMEN-Zr) and oxygen plasma as zirconium and oxygen sources. The zirconium oxide thin films demonstrate temperature-independent growth rates per cycle of 0.94 A/cycle at 150–215 °C. The deposited ZrO [...] Read more.
Zirconium oxides were deposited using plasma-enhanced atomic layer deposition (PEALD) involving (2-(N-methylamino)1-MethylEthyleneCyclopentadienyl)Bis(DiMethylAmino)Zr (abbreviated as CMEN-Zr) and oxygen plasma as zirconium and oxygen sources. The zirconium oxide thin films demonstrate temperature-independent growth rates per cycle of 0.94 A/cycle at 150–215 °C. The deposited ZrO2 thin films were characterized using numerous analytical tools, i.e., X-ray photoelectron spectroscopy for chemical bonding state and composition, X-ray diffraction for crystallinity, atomic force microscopy for surface morphology, field-emission scanning electron microscopy for cross-sectional analysis, spectroscopic ellipsometry and UV–visible spectrophotometry for optical characterization, capacitance–voltage measurements for dielectric constants and atomic defects, and current–voltage characteristics for electrical information. The insulating features of the crystalline and stoichiometric ZrO2 films were implemented in the anode composites to evaluate the influence of ALD-based nano-features on the electrochemical performance of solid oxide fuel cells, with the main emphasis on anode performance. The presence of nanomaterials on Ni/YSZ anode composites is analyzed to determine the negative effects on electrochemical performance and the degradation of cell performance of solid oxide fuel cells (SOFCs). The artificial design was proven to be effective in controlling the cell performance as long as proper material design was adopted in SOFC electrodes. Full article
(This article belongs to the Special Issue Atomic Layer Deposition of Thin-Films)
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Article
Low-Damage and Self-Limiting (Al)GaN Etching Process through Atomic Layer Etching Using O2 and BCl3 Plasma
Coatings 2021, 11(3), 268; https://doi.org/10.3390/coatings11030268 - 25 Feb 2021
Cited by 2 | Viewed by 920
Abstract
This paper reports on the use of low-damage atomic layer etching (ALE) performed using O2 and BCl3 plasma for etching (Al)GaN. The proposed ALE process led to excellent self-limiting etch characteristics with a low direct current (DC) self-bias, which resulted in [...] Read more.
This paper reports on the use of low-damage atomic layer etching (ALE) performed using O2 and BCl3 plasma for etching (Al)GaN. The proposed ALE process led to excellent self-limiting etch characteristics with a low direct current (DC) self-bias, which resulted in a high linearity between the etching depth and number of cycles. The etching damage was evaluated using several methods, including atomic force microscopy, photoluminescence (PL), and X-ray photoelectron spectroscopy, and the IV properties of the recessed Schottky diodes were compared with those of digital etching performed using O2 plasma and HCl solution. The electrical characteristics of the recessed Schottky diode fabricated using the proposed ALE process were superior to those of the diodes fabricated using the conventional digital etching process. Moreover, the ALE process yielded a higher PL intensity and N/(Al + Ga) ratio of the etched AlGaN surface, along with a smoother etched surface. Full article
(This article belongs to the Special Issue Atomic Layer Deposition of Thin-Films)
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Article
Adsorption of Titanium Halides on Nitride and Oxide Surfaces during Atomic Layer Deposition: A DFT Study
Coatings 2020, 10(8), 712; https://doi.org/10.3390/coatings10080712 - 23 Jul 2020
Cited by 4 | Viewed by 1270
Abstract
Various processes based on atomic layer deposition (ALD) have been reported for growing Ti-based thin films such as TiN and TiO2. To improve the uniformity and conformity of thin films grown via ALD, fundamental understanding of the precursor–substrate surface reactions is [...] Read more.
Various processes based on atomic layer deposition (ALD) have been reported for growing Ti-based thin films such as TiN and TiO2. To improve the uniformity and conformity of thin films grown via ALD, fundamental understanding of the precursor–substrate surface reactions is required. Herein, we present a density functional theory (DFT) study of the initial nucleation process of some titanium halide precursors (TiCl4, TiBr4, and TiI4) on Si surfaces having –OH or –NH2 functional groups. We consider the most favorable adsorption site in the reaction between the precursor and functional group of the surface, based on the thermodynamics and kinetics of the reaction. Sequential dissociation reaction mechanisms of halide ligands were systematically investigated. The exothermicity of the dissociative adsorption was found to be in the order of: TiI4 > TiBr4 > TiCl4. In addition, the precursors were observed to be more exothermic and show higher reaction rate constant when adsorbed on the –OH–terminated surface than on the –NH2–terminated surface. These observations reveal the selectivity of deposition by surface functional groups. Full article
(This article belongs to the Special Issue Atomic Layer Deposition of Thin-Films)
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Article
Influence of AlN and GaN Pulse Ratios in Thermal Atomic Layer Deposited AlGaN on the Electrical Properties of AlGaN/GaN Schottky Diodes
Coatings 2020, 10(5), 489; https://doi.org/10.3390/coatings10050489 - 19 May 2020
Cited by 3 | Viewed by 1240
Abstract
Atomic layer deposited AlGaN with different AlN and GaN pulse ratios (2:1, 1:1, and 1:2) was used to prepare AlGaN/GaN Schottky diodes, and their current transport mechanisms were investigated using current–voltage (I–V) and capacitance–voltage (C–V) measurements. Under low reverse [...] Read more.
Atomic layer deposited AlGaN with different AlN and GaN pulse ratios (2:1, 1:1, and 1:2) was used to prepare AlGaN/GaN Schottky diodes, and their current transport mechanisms were investigated using current–voltage (I–V) and capacitance–voltage (C–V) measurements. Under low reverse bias condition, the sample with the pulse ratio of 2:1 was explained by Poole–Frenkel emission and the negative temperature dependence for the sample with the pulse ratio of 1:2 was associated with the acceptor levels in the AlGaN layer. Fast interface traps at 0.24–0.29 eV were observed for the samples with the pulse ratios of 1:1 and 1:2, whereas bulk traps at ~0.34 eV were observed for the sample with the pulse ratio of 2:1. Higher trap densities were obtained from the C–V hysteresis measurements when the pulse ratios were 1:1 and 1:2, indicating the presence of a charge trapping interfacial layer. According to the X-ray photoelectron spectroscopy spectra, the pulse ratio of 2:1 was found to have less oxygen-related defects in the AlGaN layer. Full article
(This article belongs to the Special Issue Atomic Layer Deposition of Thin-Films)
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