Special Issue "Atomic Layer Deposition of Thin-Films"

A special issue of Coatings (ISSN 2079-6412).

Deadline for manuscript submissions: 31 December 2020.

Special Issue Editors

Prof. Bonggeun Shong
Website
Guest Editor
Department of Chemical Engineering, Hongik University, Seoul 04066, Korea
Interests: surface chemistry; atomic layer deposition; area-selective atomic layer deposition; molecular layer deposition
Prof. Woo-Hee Kim
Website
Co-Guest Editor
Department of Materials Science and Chemical Engineering, Hanyang University, Ansan 15588, Korea
Interests: atomic layer deposition; atomic layer etching; area-selective atomic layer deposition; bottom-up nanofabrication; semiconductor processing

Special Issue Information

Dear Colleagues,

Atomic layer deposition (ALD) is a thin film deposition technique based on sequential surface reactions of gas phase precursors and reactants. Currently, ALD is adopted as an essential process in the fabrication of microelectronic devices, and its applications toward controlled synthesis of various nanomaterials are expanding. Several techniques related to ALD are also emerging, such as atomic layer etching (ALE), area-selective atomic layer deposition (AS-ALD), and molecular layer deposition (MLD). Fundamental aspects of ALD, such as surface chemistry and nucleation theory, still demand further research.

The topics of interest of this Special Issue include, but are not limited to:

  • Deposition of thin films by ALD
  • Atomic layer etching (ALE)
  • Area-selective ALD (AS-ALD)
  • Molecular layer deposition (MLD)
  • Applications of ALD materials
  • Applications of ALD processes
  • Fundamental aspects of ALD
Prof. Bonggeun Shong
Prof. Woo-Hee Kim
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Coatings is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • atomic layer deposition (ALD)
  • atomic layer etching (ALE)
  • area-selective atomic layer deposition (AS-ALD)
  • molecular layer deposition (MLD)

Published Papers (1 paper)

Order results
Result details
Select all
Export citation of selected articles as:

Research

Open AccessArticle
Influence of AlN and GaN Pulse Ratios in Thermal Atomic Layer Deposited AlGaN on the Electrical Properties of AlGaN/GaN Schottky Diodes
Coatings 2020, 10(5), 489; https://doi.org/10.3390/coatings10050489 - 19 May 2020
Abstract
Atomic layer deposited AlGaN with different AlN and GaN pulse ratios (2:1, 1:1, and 1:2) was used to prepare AlGaN/GaN Schottky diodes, and their current transport mechanisms were investigated using current–voltage (I–V) and capacitance–voltage (C–V) measurements. Under low reverse [...] Read more.
Atomic layer deposited AlGaN with different AlN and GaN pulse ratios (2:1, 1:1, and 1:2) was used to prepare AlGaN/GaN Schottky diodes, and their current transport mechanisms were investigated using current–voltage (I–V) and capacitance–voltage (C–V) measurements. Under low reverse bias condition, the sample with the pulse ratio of 2:1 was explained by Poole–Frenkel emission and the negative temperature dependence for the sample with the pulse ratio of 1:2 was associated with the acceptor levels in the AlGaN layer. Fast interface traps at 0.24–0.29 eV were observed for the samples with the pulse ratios of 1:1 and 1:2, whereas bulk traps at ~0.34 eV were observed for the sample with the pulse ratio of 2:1. Higher trap densities were obtained from the C–V hysteresis measurements when the pulse ratios were 1:1 and 1:2, indicating the presence of a charge trapping interfacial layer. According to the X-ray photoelectron spectroscopy spectra, the pulse ratio of 2:1 was found to have less oxygen-related defects in the AlGaN layer. Full article
(This article belongs to the Special Issue Atomic Layer Deposition of Thin-Films)
Back to TopTop