Vacuum Deposition Technologies and Semiconductor Applications

A special issue of Coatings (ISSN 2079-6412). This special issue belongs to the section "Thin Films".

Deadline for manuscript submissions: closed (30 August 2024) | Viewed by 1764

Special Issue Editors


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Guest Editor
School of Microelectronics, Fudan University, Shanghai 200433, China
Interests: atomic layer deposition of thin films and their applications in nano devices

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Guest Editor
School of Materials Science and Engineering, Anhui University, Hefei 230601, China
Interests: functional thin-film deposition; thin-film transistors; CMOS devices; integration
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Special Issue Information

Dear Colleagues,

Nanoscale thin films play a fundamental role in various applications, encompassing coatings, surface treatments, semiconductor devices, and so on. The deposition of thin films allows for the refinement of elemental surface layers, ensuring specific functional properties while potentially utilizing cost-effective core materials. Among the many techniques enhancing the functional properties of engineering materials surfaces, vacuum methods play an important role in industrial practice. The aim of this Special Issue is to provide a platform where academics, industry experts, and researchers worldwide can share their research achievements and exchange experiences within the field of vacuum deposition and semiconductor applications. This SI warmly welcomes the works from the Conference on Chinese Vacuum Technologies and Semiconductor Applications 2023.

Topics of interest include but are not limited to:

  1. Theoretical and experimental research in vacuum thin-film deposition methods;
  2. Thin-film processes and related devices, including chemical vapour deposition (CVD); physical vapour deposition (PVD) and atomic layer deposition (ALD)...;
  3. The application of vacuum thin-film deposition, including memory, metal oxide semiconductor field effect transistors (MOSFETs), thin-film transistors (TFTs), sensors, ...

Prof. Dr. Hongliang Lu
Prof. Dr. Gang He
Guest Editors

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Keywords

  • vacuum thin-film deposition
  • surface and interface
  • memory device
  • MOSFET
  • thin-film transistors
  • sensors
  • semiconductor

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Published Papers (1 paper)

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Research

11 pages, 4401 KiB  
Article
High-Performance UV–Visible Broad Spectral Phototransistors Based on CuPc/Cs3Bi2I9 Heterojunction
by Yurui Wang, Benfu Jiang, Xijun Zhao, Yuxing Chen, Xinxin Pan, Qing Yu and Bo Yao
Coatings 2024, 14(8), 966; https://doi.org/10.3390/coatings14080966 - 2 Aug 2024
Viewed by 1170
Abstract
Phototransistors are three-terminal photodetectors that usually have a higher photocurrent gain than photodiodes due to the amplification of the gate electrode. In this work, a broad spectral phototransistor based on copper phthalocyanine (CuPc) and a Cs3Bi2I9 (CBI) heterojunction [...] Read more.
Phototransistors are three-terminal photodetectors that usually have a higher photocurrent gain than photodiodes due to the amplification of the gate electrode. In this work, a broad spectral phototransistor based on copper phthalocyanine (CuPc) and a Cs3Bi2I9 (CBI) heterojunction is fabricated by the full vacuum evaporation method. Due to the complementary UV–visible absorption of CuPc and CBI, the device exhibits superior performance under three different types of visible light illumination. The experimental results show that the structure of the organic/perovskite heterojunction active layer has the characteristics of good compatibility and a simple process. Meanwhile, by utilizing the superior light-absorption characteristics of perovskite materials and the strong exciton dissociation efficiency of a hetero-type heterojunction interface, the CuPc/CBI-PT exhibits a higher photoresponsivity, photosensitivity, specific detection rate, and lower operating voltage than the CuPc reference device. The stability test shows that the CuPc/CBI-PT can still obtain a 0.73 A/W photoresponsivity under 660 nm light illumination after being stored in the air for 360 h without any packaging. This indicates that the organic/perovskite heterojunction PT may be a good choice for the preparation of high-performance photodetectors. Full article
(This article belongs to the Special Issue Vacuum Deposition Technologies and Semiconductor Applications)
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