Advanced Nanomaterials for Thin Film Light-Emitting Diodes
A special issue of Coatings (ISSN 2079-6412). This special issue belongs to the section "Surface Engineering for Energy Harvesting, Conversion, and Storage".
Deadline for manuscript submissions: closed (30 December 2021) | Viewed by 436
Special Issue Editor
Special Issue Information
Dear Colleagues,
The technology of quantum-dot light-emitting diodes (QLED) is not only one of the major applications of colloidal nanocrystals, but also a promising candidate for high-quality printed displays. Inspired by the recent progress in both academia and industry, the display quality of QLED is supposed to surpass that of organic LED and many other competitors. The performance of a QLED pixel relies on the optoelectronic properties of each functional thin film in the multilayer structure. Currently, the solid assembly of quantum dots, also known as the emitting layer, is capable of highly efficient photoluminescence. Charge-transporting layers can provide balanced injection of electrons and holes, although there is still plenty of room to improve injection efficiency. Deep-level states may exist at the interface of functional layers, leading to unwanted charge transfer. More importantly, the optoelectronic properties of the thin-film stack, especially in blue devices, are still not reliable enough to enable industrialization of the technology.
This Special Issue will cover recent advances in materials synthesis, device fabrication, and device physics. In particular, study of device degradation, the positive aging effect, and development of characterization methods are welcome.
It is our pleasure to invite you to submit review articles, original papers, and communications to this Special Issue on “Functional Thin Films for Quantum-Dot Light-Emitting Diodes”.
Prof. Dr. Song Chen
Guest Editor
Manuscript Submission Information
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Keywords
- Quantum dot
- Light-emitting diodes
- Electroluminescence
- Photoluminescence
- Degradation
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