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Coatings
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Thin Films for Electronic Devices
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Thin Films for Electronic Devices

A special issue of Coatings (ISSN 2079-6412). This special issue belongs to the section "Thin Films".

Deadline for manuscript submissions: closed (30 April 2022) | Viewed by 10124

Special Issue Editors

Prof. Dr. Nam-Hoon Kim

E-Mail Website
Guest Editor
Department of Electrical Engineering, Chosun University, Gwangju 61452, Republic of Korea
Interests: semiconductor devices & process; thin films; electrical/optical properties
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Liang He

E-Mail Website
Guest Editor
School of Mechanical Engineering, Sichuan University, Chengdu 610065, China
Interests: integration of nanomaterial into microsystem; micromachining of carbon-MEMS and integrated microdevice; power-MEMS and on-chip integrated microsystem
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Over the past few decades, the rapid development of advanced materials and devices for electronics has led mainstream research. Thin films for novel devices continue to be an innovative area in physics, materials science, chemistry, and electronics engineering. This Special Issue of Coatings on “Thin Films for Electronic Devices” encompasses all aspects of advanced thin films for state-of-the-art optoelectonic, photonic, energy, electronic, and neuromorphic devices in the field of their properties, fabrication, characterization, and applications. The aim of this Special Issue is to present the latest experimental and theoretical developments of thin films for diverse electronic devices, through a combination of original research papers and review articles from leading groups around the world.

In particular, the topic of interest includes but is not limited to:

  • Prospect of future thin films from the perspective of electronic devices;
  • Fundamental studies and modeling of thin films for electronic devices;
  • Novel thin films for newly developed devices in a wide range of optoelectronics, photonics, photovoltaics, thermoelectrics, sensing, and neuromorphics;
  • Fabrication technologies for novel devices;
  • Characterization/properties/surface/interface/defect/boundary/reliability.

Prof. Dr. Nam-Hoon Kim
Prof. Dr. Liang He
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Coatings is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Published Papers (3 papers)

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Research

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14 pages, 4647 KiB  
Article
Ce and Y Co-Doping Effects for (Ba0.85Ca0.15)(Zr0.1Ti0.9)O3 Lead-Free Ceramics
by Chao Li, Jin-Su Baek and Jung-Hyuk Koh
Coatings 2021, 11(10), 1248; https://doi.org/10.3390/coatings11101248 - 14 Oct 2021
Cited by 4 | Viewed by 1495
Abstract
CeO2 and Y2O3 were co-doped to (Ba0.85Ca0.15)(Zr0.1Ti0.9)O3 ceramics and sintered by conventional solid-state reaction process to form x wt.% CeO2-y wt.% Y2O3 doped (Ba0.85 [...] Read more.
CeO2 and Y2O3 were co-doped to (Ba0.85Ca0.15)(Zr0.1Ti0.9)O3 ceramics and sintered by conventional solid-state reaction process to form x wt.% CeO2-y wt.% Y2O3 doped (Ba0.85Ca0.15)(Zr0.1Ti0.9)O3 (CexYy-BCZT) ceramics. The effects of different contents of CeO2-Y2O3 dopants to the (Ba0.85Ca0.15) (Zr0.1Ti0.9)O3 composition were analyzed by studying the phase, surface microstructure, piezoelectric and ferroelectric properties of BCZT ceramics. In this study, we have shown that co-doping a small amount of CeO2 and Y2O3 will not change the phase structure of (Ba0.85Ca0.15)(Zr0.1Ti0.9)O3 ceramics. However, the proper introduction of CeO2 and Y2O3 can improve the piezoelectric constant and electromechanical coupling coefficient of BCZT ceramic samples. Moreover, these dopants can promote the grain growth process in (Ba0.85Ca0.15) (Zr0.1Ti0.9)O3 ceramics. C0.04Y0.02 doped (Ba0.85Ca0.15)(Zr0.1Ti0.9)O3 ceramic has the best piezoelectric properties compared with other composition, the results are as follows: Relative density = 96.9%, Kp = 0.583, and d33 = 678 pC/N, V = 8.9 V. It means that this Ce0.04Y0.02 doped (Ba0.85Ca0.15)(Zr0.1Ti0.9)O3 ceramic is a desired material in the application of lead-free ceramics. Full article
(This article belongs to the Special Issue Thin Films for Electronic Devices)
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12 pages, 2096 KiB  
Article
Te-Embedded Nanocrystalline PbTe Thick Films: Structure and Thermoelectric Properties Relationship
by Tingjun Wu, Jae-Hong Lim, Kyu-Hwan Lee, Jiwon Kim and Nosang V. Myung
Coatings 2021, 11(3), 356; https://doi.org/10.3390/coatings11030356 - 21 Mar 2021
Cited by 4 | Viewed by 2075
Abstract
The Te-embedded PbTe nanocrystallline thick films (i.e., 50 µm) were electrodeposited, where the fraction and average grain size of PbTe and Te phases were tuned by adjusting the applied potential followed by post thermal treatment. The crystal grain boundary and Te nano-inclusion in [...] Read more.
The Te-embedded PbTe nanocrystallline thick films (i.e., 50 µm) were electrodeposited, where the fraction and average grain size of PbTe and Te phases were tuned by adjusting the applied potential followed by post thermal treatment. The crystal grain boundary and Te nano-inclusion in the films played critical roles in their thermoelectric properties. The Te-embedded PbTe thick film with the average grain size of around 100 nm showed lower energy barrier height (EB = 0.023 eV) than thick films with the average grain size of a few tens of nm (EB = 0.11). Although decrease in the energy barrier reduced the Seebeck coefficient, however, it enhanced the electrical conductivity, which resulted in an increase in power factor (PF). The highest power factor was 183 μw K−2 cm−1, achieved at the energy barrier of 0.023 eV. Full article
(This article belongs to the Special Issue Thin Films for Electronic Devices)
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Review

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28 pages, 5260 KiB  
Review
Research Progress of Biomimetic Memristor Flexible Synapse
by Huiling Zhang, Ruping Liu, Huiqing Zhao, Zhicheng Sun, Zilong Liu, Liang He and Ye Li
Coatings 2022, 12(1), 21; https://doi.org/10.3390/coatings12010021 - 25 Dec 2021
Cited by 18 | Viewed by 5197
Abstract
With the development of the Internet of things, artificial intelligence, and wearable devices, massive amounts of data are generated and need to be processed. High standards are required to store and analyze this information. In the face of the explosive growth of information, [...] Read more.
With the development of the Internet of things, artificial intelligence, and wearable devices, massive amounts of data are generated and need to be processed. High standards are required to store and analyze this information. In the face of the explosive growth of information, the memory used in data storage and processing faces great challenges. Among many types of memories, memristors have received extensive attentions due to their low energy consumption, strong tolerance, simple structure, and strong miniaturization. However, they still face many problems, especially in the application of artificial bionic synapses, which call for higher requirements in the mechanical properties of the device. The progress of integrated circuit and micro-processing manufacturing technology has greatly promoted development of the flexible memristor. The use of a flexible memristor to simulate nerve synapses will provide new methods for neural network computing and bionic sensing systems. In this paper, the materials and structure of the flexible memristor are summarized and discussed, and the latest configuration and new materials are described. In addition, this paper will focus on its application in artificial bionic synapses and discuss the challenges and development direction of flexible memristors from this perspective. Full article
(This article belongs to the Special Issue Thin Films for Electronic Devices)
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