Advanced 2D Materials and Wide-Band-Gap Compound Semiconductors: Epitaxial Growth, Characterization and Applications

A special issue of Coatings (ISSN 2079-6412). This special issue belongs to the section "Surface Engineering for Energy Harvesting, Conversion, and Storage".

Deadline for manuscript submissions: 31 January 2026 | Viewed by 1815

Special Issue Editors


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Guest Editor
National Applied Research Laboratories, Taiwan Instrument Research Institute (TIRI), 20 R&D Road VI, Hsinchu Science Park, Hsinchu 300092, Taiwan
Interests: epitaxial growth; 2D materials; III-nitride; MOCVD; materials analysis
Special Issues, Collections and Topics in MDPI journals

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Guest Editor
National Applied Research Laboratories, Taiwan Instrument Research Institute (TIRI), 20 R&D Road VI, Hsinchu Science Park, Hsinchu 300092, Taiwan
Interests: TMDs growth; III-nitride

Special Issue Information

Dear Colleagues,

We are excited to announce a Special Issue of Coatings, titled "Advanced 2D Materials and Wide Band Gap Compound Semiconductors: Epitaxial Growth, Characterization and Applications." This Special Issue will bring together innovative research and advancements in the realm of 2D materials and wide-band-gap semiconductors, which are crucial for the next generation of electronic, optoelectronic, and energy devices.

Compound semiconductors consisting of III-nitride elements and advanced 2D materials such as transition metal dichalcogenides (TMDs), graphene, and boron nitride (BN) have garnered significant attention due to their versatile applications in areas such as LEDs, solar cells, detectors, sensors, and energy harvesting. Historically, compound semiconductors have predominantly been used in optoelectronic devices. In recent years, van der Waals (vdW) epitaxy has emerged as a promising method for growing high-quality materials, including III-V semiconductors on 2D materials.

Van der Waals epitaxy (vdWE) has proven to be a useful approach for relaxing the requirements of lattice mismatch and thermal mismatch between nitride epilayers and substrates. By using vdWE, the stress in the epilayer can be sufficiently relaxed, allowing the epilayer to be easily exfoliated and transferred, which provides opportunities for novel device design and fabrication. Our goal is to broaden this research field to include various applications using emerging nanomaterials, meeting growing demand for advanced display and electronic devices.

We invite researchers, scientists, and engineers from academia, industry, and research institutions to submit their original research articles, reviews, and perspectives. This Special Issue will undergo a rigorous peer-review process to ensure the publication of high-quality and impactful research.

Topics of interest include, but are not limited to, the following:

  • New materials and characterization techniques;
  • LEDs and laser diodes (LDs);
  • Two-dimensional materials and Van der Waals heterostructures;
  • Epitaxial growth;
  • Power devices and their electrical and optical properties;
  • Semiconductor device technology;
  • Nanoscale characterization of nanomaterials;
  • Emerging nanomaterials and nanostructures.

Dr. Wei-Chun Chen
Dr. Wei-Lin Wang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Coatings is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • epitaxy
  • van der waals
  • TMDs
  • nitride
  • CVD

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Published Papers (1 paper)

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Research

14 pages, 4661 KiB  
Article
Ultra-High-Efficiency Solar Capture Device Based on InAs Top Microstructure
by Hao Luo, Yanying Zhu, Qianju Song, Yougen Yi, Zao Yi, Qingdong Zeng and Zhizhong Li
Coatings 2024, 14(10), 1297; https://doi.org/10.3390/coatings14101297 - 11 Oct 2024
Viewed by 1032
Abstract
Research on how to efficiently utilize solar energy can effectively address the current situation where excessive carbon emissions threaten the natural environment. The solar capture device, as the core component of the solar thermal photovoltaic system, can significantly enhance the absorption properties of [...] Read more.
Research on how to efficiently utilize solar energy can effectively address the current situation where excessive carbon emissions threaten the natural environment. The solar capture device, as the core component of the solar thermal photovoltaic system, can significantly enhance the absorption properties of the solar thermal photovoltaic system, which is of high research value in the solar energy application area. In this paper, a metamaterial broadband solar capture device based on the top microstructure of semiconductor InAs material is proposed. The model is fabricated from top to bottom with the semiconductor InAs material at the top with Ti material to make hollow cylindrical microstructures, and a combination of SiO2 material film, Ti material film, and Cu material film as the substrate. In addition to incorporating the properties of metamaterials, the model is also inspired by the quantum-limited domain effect of nano-semiconductors by using the incorporation of InAs top microstructures at the top to further improve the model’s absorption properties. The model was calculated to have an average absorption in the 280–2500 nm waveband of 96.15% and a weighted average absorption in the 280–4000 nm waveband of 97.71% at AM1.5. Results of calculating the model’s reflectivity in the 280–20,000 nm bands show that the reflectivity of the model is higher than 80% in all the bands after the wavelength of 7940 nm, so the model has a certain spectral selectivity. In addition, the thermal radiation efficiency of the model in the 280–2500 nm waveband, when it is used as a thermal emitter, is calculated to reach 94.40% in this paper. Meanwhile, the capture device has good angular insensitivity, which has high potential for practical applications. Full article
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