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Applied Sciences
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Antenna and Radio-Frequency Technologies for 5G and 6G Wireless Communications
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Antenna and Radio-Frequency Technologies for 5G and 6G Wireless Communications

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Electrical, Electronics and Communications Engineering".

Deadline for manuscript submissions: closed (20 May 2025) | Viewed by 2592

Special Issue Editors

Dr. Shu-Han Liao

E-Mail Website
Guest Editor
Department of Electrical Engineering, Tamkang University, New Taipei City 251, Taiwan
Interests: wireless communication systems; Internet of Things applications; 5G/B5G and next-generation communication (6G) technology; smart healthcare
Prof. Dr. Donald Y.C. Lie

E-Mail Website
Guest Editor
Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX 79409, USA
Interests: low−power RF/analog integrated circuits & System−on−a−Chip (SoC) design and test; interdisciplinary research on medical electronics, biosensors & biosignal processing
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Fifth-generation (5G) mobile technology is currently attracting extensive research interest from both industry and academia, with a specific focus on its opportunities and challenges. It is expected that 6G will bring forth a great revolution in communication technologies, as it will enable the creation of an Internet of Everything. Compared to 5G technology, in the future, 6G technology is expected to allow for even higher throughputs, even shorter latency times, greater component density, and the mass integration of artificial intelligence in all segments constituting the network.

This Special Issue encourages high-quality papers that advance the state of the art and practical applications of 5G and 6G wireless communications. This feature topic will bring together academic and industrial researchers to identify and discuss the significant opportunities and challenges in applying antenna and Radio-Frequency technologies to the understanding and design of modern network systems.

Dr. Shu-Han Liao
Prof. Dr. Donald Y.C. Lie
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Applied Sciences is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • fifth generation (5G)
  • sixth generation (6G) wireless system
  • antenna
  • Radio-Frequency technologies

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Published Papers (2 papers)

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24 pages, 5904 KiB  
Article
High-Gain Dual-Band Microstrip Antenna for 5G mmWave Applications: Design, Optimization, and Experimental Validation
by Bilal Okan Icmez and Cetin Kurnaz
Appl. Sci. 2025, 15(7), 3993; https://doi.org/10.3390/app15073993 - 4 Apr 2025
Viewed by 573
Abstract
This study presents a novel dual-band microstrip antenna operating at 28/38 GHz, which is designed for fifth generation (5G) and next-generation communications. The objective was to create a high-gain, single-element solution that addresses millimeter-wave (mmWave) challenges, like attenuation and signal loss, offering a [...] Read more.
This study presents a novel dual-band microstrip antenna operating at 28/38 GHz, which is designed for fifth generation (5G) and next-generation communications. The objective was to create a high-gain, single-element solution that addresses millimeter-wave (mmWave) challenges, like attenuation and signal loss, offering a more efficient alternative to complex array antennas. The antenna was designed using Rogers RT/duroid 5880 as a substrate, and CST simulations were used to optimize the return loss, gain, and efficiency. Analytical methods and parametric analyses were used to further optimize the design. Additionally, an SMP connector was integrated into the simulated model using Antenna Magus software, followed by further refinement through additional parametric studies. The final compact antenna (33 × 27 × 1.6 mm3) demonstrates excellent performance with simplified fabrication. The antenna achieved bandwidths of 1.12 GHz at 28 GHz and 1.27 GHz at 38 GHz, with remarkably low return loss values of −53.04 dB and −83.65 dB, respectively. The gain values reached 7.82 dBi at 28 GHz and 8.98 dBi at 38 GHz—prototype measurements closely aligned with simulations, confirming reliability. This study introduces a high-performance, single-element antenna that is both simple and complex. The meticulous optimization process, including SMP connector variations, minimized the fabrication sensitivity and improved the overall performance, thereby marking a significant advancement in antenna design. Full article
(This article belongs to the Special Issue Antenna and Radio-Frequency Technologies for 5G and 6G Wireless Communications)
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14 pages, 12507 KiB  
Article
Broadband Millimeter-Wave Front-End Module Design Considerations in FD-SOI CMOS vs. GaN HEMTs
by Clint Sweeney, Donald Y. C. Lie, Jill C. Mayeda and Jerry Lopez
Appl. Sci. 2024, 14(23), 11429; https://doi.org/10.3390/app142311429 - 9 Dec 2024
Viewed by 1113
Abstract
Millimeter-wave (mm-Wave) phased array systems need to meet the transmitter (Tx) equivalent isotropic radiated power (EIRP) requirement, and that depends mainly on the design of two key sub-components: (1) the antenna array and (2) the Tx power amplifier (PA) in the front-end-modules (FEMs). [...] Read more.
Millimeter-wave (mm-Wave) phased array systems need to meet the transmitter (Tx) equivalent isotropic radiated power (EIRP) requirement, and that depends mainly on the design of two key sub-components: (1) the antenna array and (2) the Tx power amplifier (PA) in the front-end-modules (FEMs). Simulations using an electromagnetic (EM) solver carried out in Cadence AWR with AXIEM suggest that for two uniform square patch antenna arrays at 24 GHz, the 4 element array has ~6 dB lower antenna gain and twice the half power beam width (HPBW) compared to the 16 element array. We also present measurements and post-layout parasitic-extracted (PEX) EM simulation data taken on two broadband mm-Wave PAs designed in our lab that cover the key portions of the fifth-generation (5G) FR2-band (i.e., 24.25–52.6 GHz) that lies between the super-high-frequency (SHF, i.e., 3–30 GHz) band and the extremely-high-frequency (EHF, i.e., 30–300 GHz) band: one designed in a 22 nm fully depleted silicon on insulator (FD-SOI) CMOS process, and the other in an advanced 40 nm Gallium Nitride (GaN) high-electron-mobility transistor (HEMT) process. The FD-SOI PA achieves saturated output power (POUT,SAT) of ~14 dBm and peak power-added efficiency (PAE) of ~20% with ~14 dB of gain and 3 dB bandwidth (BW) from ~19.1 to 46.5 GHz in measurement, while the GaN PA achieves measured POUT,SAT of ~24 dBm and peak PAE of ~20% with ~20 dB gain and 3 dB BW from ~19.9 to 35.2 GHz. The PAs’ measured data are in good agreement with the PEX EM simulated data, and 3rd Watt-level GaN PA design data are also presented, but with simulated PEX EM data only. Assuming each antenna element will be driven by one FEM and each phased array targets the same 65 dBm EIRP, millimeter wave (mm-Wave) antenna arrays using the Watt-level GaN PAs and FEMs are expected to achieve roughly 2× wider HPBW with 4× reduction in the array size compared with the arrays using Si FEMs, which shall alleviate the thorny mm-Wave line-of-sight (LOS)-blocking problems significantly. Full article
(This article belongs to the Special Issue Antenna and Radio-Frequency Technologies for 5G and 6G Wireless Communications)
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