Photonic Integrated Circuits for Optical Communications

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Optics and Lasers".

Deadline for manuscript submissions: closed (30 November 2020) | Viewed by 20371

Special Issue Editors


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Guest Editor
Departamento de Electrónica, Telecomunicações e Informática, Universidade de Aveiro, 3810-193 Aveiro, Portugal
Interests: access networks; optical processing; photonic integration

E-Mail Website
Guest Editor
Instituto de Telecomunicações, Aveiro, 3810-193, Aveiro, Portugal
Interests: optical communications; artificial intelligence
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

The unprecedented demands on the Internet due to the proliferation of several bandwidth-intensive multimedia technologies, applications and services have resulted in huge broadband connections. The demands of communication systems can be efficiently attended to with the emerging super-channel transmission and large-scale photonic solutions. There has been a great prospect for exceptionally low-cost photonic solutions with the fabrication of silicon photonic devices in complementary metal oxide semiconductor (CMOS) environments. Silicon chip-based integrated optics technology and other variants like InP and SiN have been attracting considerable interest as they encourage the easy fabrication of very complex photonic integrated circuits (PIC) for optical communications. This helps to alleviate the complexity of optical components and stability limitation. Therefore, PIC helps in enhancing the system feasibility by offering advantages such as a low footprint, low power consumption and cost effectiveness. PICs have the potential of enabling high density, high data rates and flexible solutions in telecommunications and other fields. From intra-chip to chip-to-chip and chip-to-board, PICs may be used and will enable great advances when they have matured sufficiently and developed for all ecosystems, following the integrated electronics example. However, like any other emerging technologies, PIC design comes with a number of specific challenges such as thermal management, packaging, RF interface management, circuit modelling and ecosystem development, that demand concerted efforts to be addressed. We invite prospective authors to submit innovative and high-quality papers with original perspectives on any of the PIC-related topics.

Prof. Dr. António Luís Jesus Teixeira
Dr. Isiaka Alimi
Guest Editors

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Keywords

  • Photonic integrated circuits related materials
  • Optical waveguides
  • Optical coupling techniques (chip to fiber, chip to chip, other)
  • Optics to chip interfaces
  • Optoelectronic interfaces for photonic integrated circuits
  • Optical packaging of photonic integrated circuits
  • Passive photonic integration
  • Active photonic integration
  • Integrated photonic circuit designs and tools for communications
  • Tunable technologies for photonic integration
  • Filtering, tunable or not, in optical integration
  • Photonic integrated complex circuits and functions for communications (routing, buffering, memory, switching, packet and burst processing, etc.)
  • RF- and microwave-related photonic integration
  • Lidar related photonic integration
  • Innovative components and concepts for photonic integration
  • Photonics integrated circuits processes, roadmapping and ecosystem development (private runs, MPW, other)

Published Papers (6 papers)

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Research

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8 pages, 2639 KiB  
Article
JFET Integration Using a Foundry SOI Photonics Platform
by Shuxia Li, N. Garry Tarr and Winnie N. Ye
Appl. Sci. 2019, 9(19), 3964; https://doi.org/10.3390/app9193964 - 21 Sep 2019
Cited by 2 | Viewed by 2814
Abstract
We explore the monolithic integration of conventional electronics with SOI photonics using the commercial silicon photonics foundry technology offered by A*STAR’s Institute of Microelectronics (IME). This process offers optical waveguide modulators and photodetectors, but was not intended to support transistors. We present the [...] Read more.
We explore the monolithic integration of conventional electronics with SOI photonics using the commercial silicon photonics foundry technology offered by A*STAR’s Institute of Microelectronics (IME). This process offers optical waveguide modulators and photodetectors, but was not intended to support transistors. We present the implementation of junction field effect transistors (JFETs) integrated with optical waveguides and photodetectors. A simple SPICE model is developed for the JFETs based on the available ion implant parameters, and the geometry feature size allowed by the technology’s layout rules. We have demonstrated the monolithic integration of photonics and electronics circuits. This work could be useful for application in waveguide sensors and optical telecommunications. Full article
(This article belongs to the Special Issue Photonic Integrated Circuits for Optical Communications)
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9 pages, 1075 KiB  
Article
Analysis of Optical Integration between Si3N4 Waveguide and a Ge-Based Optical Modulator Using a Lateral Amorphous GeSi Taper at the Telecommunication Wavelength of 1.55 µm
by Worawat Traiwattanapong, Kazumi Wada and Papichaya Chaisakul
Appl. Sci. 2019, 9(18), 3846; https://doi.org/10.3390/app9183846 - 13 Sep 2019
Cited by 7 | Viewed by 2589
Abstract
We report on the theoretical investigation of using an amorphous Ge0.83Si0.17 lateral taper to enable a low-loss small-footprint optical coupling between a Si3N4 waveguide and a low-voltage Ge-based Franz–Keldysh optical modulator on a bulk Si substrate using [...] Read more.
We report on the theoretical investigation of using an amorphous Ge0.83Si0.17 lateral taper to enable a low-loss small-footprint optical coupling between a Si3N4 waveguide and a low-voltage Ge-based Franz–Keldysh optical modulator on a bulk Si substrate using 3D Finite-Difference Time-Domain (3D-FDTD) simulation at the optical wavelength of 1550 nm. Despite a large refractive index and optical mode size mismatch between Si3N4 and the Ge-based modulator, the coupling structure rendered a good coupling performance within fabrication tolerance of advanced complementary metal-oxide semiconductor (CMOS) processes. For integrated optical modulator performance, the Si3N4-waveguide-integrated Ge-based on Si optical modulators could simultaneously provide workable values of extinction ratio (ER) and insertion loss (IL) for optical interconnect applications with a compact footprint. Full article
(This article belongs to the Special Issue Photonic Integrated Circuits for Optical Communications)
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12 pages, 5693 KiB  
Article
Polarimetry for Photonic Integrated Circuits
by Moritz Baier, Axel Schoenau, Francisco M. Soares and Martin Schell
Appl. Sci. 2019, 9(15), 2987; https://doi.org/10.3390/app9152987 - 25 Jul 2019
Viewed by 2590
Abstract
Photonic integrated circuits (PICs) play a key role in a wide range of applications. Very often, the performance of PICs depends strongly on the state of polarization of light. Classically, this is regarded as undesirable, but more and more applications emerge that make [...] Read more.
Photonic integrated circuits (PICs) play a key role in a wide range of applications. Very often, the performance of PICs depends strongly on the state of polarization of light. Classically, this is regarded as undesirable, but more and more applications emerge that make explicit use of polarization dependence. In either case, the characterization of the polarization properties of a PIC can be a nontrivial task. We present a way of characterizing PICs in terms of their full Müller matrix, yielding a complete picture of their polarization properties. The approach is demonstrated by carrying out measurements of fabricated PICs. Full article
(This article belongs to the Special Issue Photonic Integrated Circuits for Optical Communications)
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9 pages, 2812 KiB  
Article
Polymer-Based Microring Resonator with the Multimode Interference Coupler Operating at Very-Near-Infrared Wavelengths
by Huanlin Lv, Yuxin Liang, Zhenlin Wu, Xiuyou Han, Geert Morthier and Mingshan Zhao
Appl. Sci. 2019, 9(13), 2715; https://doi.org/10.3390/app9132715 - 4 Jul 2019
Cited by 10 | Viewed by 3061
Abstract
A microring resonator with the multimode interference coupler is fabricated on the polymer platform by using UV-based soft nanoimprint technique. A unique class of fluorinated polymer, perfluoropolyether (PFPE), is employed for the fabrication of the flexible soft mold. By optimizing the proportion between [...] Read more.
A microring resonator with the multimode interference coupler is fabricated on the polymer platform by using UV-based soft nanoimprint technique. A unique class of fluorinated polymer, perfluoropolyether (PFPE), is employed for the fabrication of the flexible soft mold. By optimizing the proportion between Ormocore and the thinner maT, the microring resonator is fabricated almost without residual layer. The fabricated device with a Q-factor up to 2.3 × 104 is demonstrated for very-near-infrared wavelengths, which shows high potential for sensing applications. Full article
(This article belongs to the Special Issue Photonic Integrated Circuits for Optical Communications)
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12 pages, 3392 KiB  
Article
Improving the Lot Fabrication Stability and Performance of Silica Optical Films during PECVD
by Yu Zheng, Piaopiao Gao, Zhixin Xiao, Jianying Zhou, Ji’an Duan and Bo Chen
Appl. Sci. 2019, 9(4), 785; https://doi.org/10.3390/app9040785 - 22 Feb 2019
Cited by 5 | Viewed by 2695
Abstract
Silica optical film specifications are determined by their processing capability and their fabrication stability. Here, a statistical process control (SPC) approach usually used in planar lightwave circuits (PLC) is adopted to analyze the stability of the silica optical film fabrication process. Apart from [...] Read more.
Silica optical film specifications are determined by their processing capability and their fabrication stability. Here, a statistical process control (SPC) approach usually used in planar lightwave circuits (PLC) is adopted to analyze the stability of the silica optical film fabrication process. Apart from the raw materials, certain key external factors have to be taken into consideration during the PLC process, such as temperature, relative humidity, process variation and machine aging. The fabrication process can be adjusted according to SPC-based results in real-time, so as to produce high quality silica optical film. By using this method, it is possible to assess the effectiveness of older production lines and extend their production capacity at minimal cost. Full article
(This article belongs to the Special Issue Photonic Integrated Circuits for Optical Communications)
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Review

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19 pages, 2606 KiB  
Review
Photonic Integrated Circuits for NGPON2 ONU Transceivers (Invited)
by Cátia Pinho, Francisco Rodrigues, Ana Maia Tavares, Carla Rodrigues, Cláudio Emanuel Rodrigues and António Teixeira
Appl. Sci. 2020, 10(11), 4024; https://doi.org/10.3390/app10114024 - 10 Jun 2020
Cited by 6 | Viewed by 5595
Abstract
The development of photonic integrated circuits (PIC) for access network applications, such as passive optical networks (PON), constitutes a very attractive ecosystem due to PON’s potential mass market. The implementation of PIC solutions in this context is expected to facilitate the possibility of [...] Read more.
The development of photonic integrated circuits (PIC) for access network applications, such as passive optical networks (PON), constitutes a very attractive ecosystem due to PON’s potential mass market. The implementation of PIC solutions in this context is expected to facilitate the possibility of increasing the complexity and functionalities of devices at a potentially lower cost. We present a review addressing the prominent access network market requirements and the main restrictions stemming from its specific field of application. Higher focus is given to PON devices for the optical network unit (ONU) and the implications of designing a device ready for market by discussing its various perspectives in terms of technology and cost. The discussed PIC solutions/approaches in this paper are mainly based on indium phosphide (InP) technology, due to its monolithic integration capabilities. A comprehensive set of guidelines considering the current technology limitations, benefits, and processes are presented. Additionally, key current approaches and efforts are analyzed for PON next generations, such as next-generation PON 2 (NGPON2) and high-speed PON (HSP). Full article
(This article belongs to the Special Issue Photonic Integrated Circuits for Optical Communications)
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