applsci-logo

Journal Browser

Journal Browser

Recent Advances in CMP Slurries and Post-CMP Cleaning

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Mechanical Engineering".

Deadline for manuscript submissions: closed (1 July 2023) | Viewed by 14616

Special Issue Editors


E-Mail Website
Guest Editor
Department of Chemical and Biomolecular Engineering & Center for Advanced Materials Processing, Clarkson University, Potsdam, NY 13699, USA
Interests: chemical mechanical polishing; cleaning process; nanoparticles; adsorption; slurry; dispersion

E-Mail Website
Guest Editor
Samsung Semiconductor R&D Center, Hwaseong-si, Gyeonggi-do, Korea
Interests: semiconductor process; electrochemistry; chemical mechanical planarization; slurry; galvanic corrosion
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,  

Semiconductor technology has grown rapidly in recent decades as emerging technologies such as autonomous driving, artificial intelligence (AI), 5G communications, the Internet of Things (IoT), and large-scale data processing are increasingly integrated into our daily lives. Semiconductor innovation is a key driver of progress in many of these emerging technologies.

Chemical mechanical planarization (CMP) is one of the most critical processes for high-volume and high-yield semiconductor manufacturing. CMP has evolved and become increasingly sophisticated over the years and has enabled the development of state-of-the-art semiconductor devices. One of the current goals of CMP is to accelerate the discovery of new materials and their integration into semiconductor manufacturing, which requires an understanding of the fundamental principles of materials and their performances during the CMP process.

This Special Issue will cover recent advances in our fundamental understanding, advanced technologies, and new material development with a focus on CMP slurries and post-CMP cleaning for advanced technology nodes. This will bring together a diverse set of leading researchers and engineers—from academic to industrial and fundamental principles to fab-based CMP processes—who focus on new materials, advances in materials characterization, materials design, modeling, and fundamental material science in the CMP field.

Prof. Dr. Jihoon Seo
Dr. Kangchun Lee
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Applied Sciences is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • semiconductor manufacturing processing
  • chemical mechanical planarization (CMP)
  • post-CMP cleaning
  • slurry
  • polishing

Benefits of Publishing in a Special Issue

  • Ease of navigation: Grouping papers by topic helps scholars navigate broad scope journals more efficiently.
  • Greater discoverability: Special Issues support the reach and impact of scientific research. Articles in Special Issues are more discoverable and cited more frequently.
  • Expansion of research network: Special Issues facilitate connections among authors, fostering scientific collaborations.
  • External promotion: Articles in Special Issues are often promoted through the journal's social media, increasing their visibility.
  • e-Book format: Special Issues with more than 10 articles can be published as dedicated e-books, ensuring wide and rapid dissemination.

Further information on MDPI's Special Issue polices can be found here.

Published Papers (3 papers)

Order results
Result details
Select all
Export citation of selected articles as:

Research

16 pages, 6789 KiB  
Article
Simulation and Experimental Investigation of the Radial Groove Effect on Slurry Flow in Oxide Chemical Mechanical Polishing
by Yeongkwang Cho, Pengzhan Liu, Sanghuck Jeon, Jungryul Lee, Sunghoon Bae, Seokjun Hong, Young Hwan Kim and Taesung Kim
Appl. Sci. 2022, 12(9), 4339; https://doi.org/10.3390/app12094339 - 25 Apr 2022
Cited by 9 | Viewed by 5545
Abstract
Slurry flow on the pad surface and its effects on oxide chemical mechanical polishing (CMP) performance were investigated in simulations and experiments. A concentric groove pad and the same pad with radial grooves were used to quantitatively compare the slurry saturation time (SST), [...] Read more.
Slurry flow on the pad surface and its effects on oxide chemical mechanical polishing (CMP) performance were investigated in simulations and experiments. A concentric groove pad and the same pad with radial grooves were used to quantitatively compare the slurry saturation time (SST), material removal rate (MRR), and non-uniformity (NU) in polishing. The monitored coefficient of friction (COF) and its slope were analyzed and used to determine SSTs of 25.52 s for the concentric groove pad and 16.06 s for a certain radial groove pad. These values were well correlated with the simulation prediction, with around 5% error. Both the laminar flow and turbulent flow were included in the sliding mesh model. The back mixing effect, which delays fresh slurry supply, was found in the pressure distribution of the wafer–pad interface. Full article
(This article belongs to the Special Issue Recent Advances in CMP Slurries and Post-CMP Cleaning)
Show Figures

Figure 1

7 pages, 2034 KiB  
Communication
Suppression of Dissolution Rate via Coordination Complex in Tungsten Chemical Mechanical Planarization
by Kangchun Lee and Jihoon Seo
Appl. Sci. 2022, 12(3), 1227; https://doi.org/10.3390/app12031227 - 24 Jan 2022
Cited by 6 | Viewed by 4338
Abstract
Topography of tungsten should be assured at a minimum through chemical mechanical planarization (CMP) in the metal gate structures (e.g., buried gates, replacement metal gates) and via contact in the middle of line (MOL) process for sub−7 nm semiconductor applications. However, excessive tungsten [...] Read more.
Topography of tungsten should be assured at a minimum through chemical mechanical planarization (CMP) in the metal gate structures (e.g., buried gates, replacement metal gates) and via contact in the middle of line (MOL) process for sub−7 nm semiconductor applications. However, excessive tungsten dissolution during the CMP process that results from high oxidizer concentrations and acidic atmospheres results in poor tungsten topography. In this study, we report a novel strategy to improve the tungsten topography by suppressing tungsten dissolution via coordination complex formations between picolinic acid and tungsten oxide. With 1.5 wt% picolinic acid for the inhibitor, the dissolution rate of tungsten was dramatically attenuated, and improved topography with a Ra value of 7.8 nm were demonstrated while validating CMP removal rate. Full article
(This article belongs to the Special Issue Recent Advances in CMP Slurries and Post-CMP Cleaning)
Show Figures

Figure 1

14 pages, 47021 KiB  
Article
Fenton Reaction for Enhancing Polishing Rate and Protonated Amine Functional Group Polymer for Inhibiting Corrosion in Ge1Sb4Te5 Film Surface Chemical-Mechanical-Planarization
by Gi-Ppeum Jeong, Young-Hye Son, Jun-Seong Park, Pil-Su Kim, Man-Hyup Han, Seong-Wan Hong, Jin-Hyung Park, Hao Cui, Bo-Un Yoon and Jea-Gun Park
Appl. Sci. 2021, 11(22), 10872; https://doi.org/10.3390/app112210872 - 17 Nov 2021
Cited by 3 | Viewed by 2347
Abstract
A Fenton reaction and a corrosion inhibition strategy were designed for enhancing the polishing rate and achieving a corrosion-free Ge1Sb4Te5 film surface during chemical-mechanical planarization (CMP) of three-dimensional (3D) cross-point phase-change random-access memory (PCRAM) cells and 3D cross-point [...] Read more.
A Fenton reaction and a corrosion inhibition strategy were designed for enhancing the polishing rate and achieving a corrosion-free Ge1Sb4Te5 film surface during chemical-mechanical planarization (CMP) of three-dimensional (3D) cross-point phase-change random-access memory (PCRAM) cells and 3D cross-point synaptic arrays. The Fenton reaction was conducted with 1,3-propylenediamine tetraacetic acid, ferric ammonium salt (PDTA–Fe) and H2O2. The chemical oxidation degree of GeO2, Sb2O3, and TeO2 evidently increased with the PDTA–Fe concentration in the CMP slurry, such that the polishing rate of the Ge1Sb4Te5 film surface linearly increased with the PDTA–Fe concentration. The addition of a corrosion inhibitor having protonated amine functional groups in the CMP slurry remarkably suppressed the corrosion degree of the Ge1Sb4Te5 film surface after CMP; i.e., the corrosion current of the Ge1Sb4Te5 film surface linearly decreased as the corrosion inhibitor concentration increased. Thus, the proposed Fenton reaction and corrosion inhibitor in the Ge1Sb4Te5 film surface CMP slurry could achieve an almost recess-free Ge1Sb4Te5 film surface of the confined-PCRAM cells, having an aspect ratio of 60-nm-height to 4-nm-diameter after CMP. Full article
(This article belongs to the Special Issue Recent Advances in CMP Slurries and Post-CMP Cleaning)
Show Figures

Figure 1

Back to TopTop