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Applied Optoelectric and Energy Materials

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Materials Science and Engineering".

Deadline for manuscript submissions: closed (20 December 2022) | Viewed by 3158

Special Issue Editors


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Guest Editor
Division of Electronics and Electrical Information Engineering, Korea Maritime & Ocean University, Busan 49112, Korea
Interests: semiconductor; optoelectronic devices; quantum dot; thin-film transistor; nanowires; nanostructures

E-Mail Website
Guest Editor
Division of Electronics and Electrical Information Engineering, Korea Maritime & Ocean University, Busan 49112, Korea
Interests: GaN; LED; quantum effect devices; energy harvesting; nanogenerator; triboelectric; perovskite

Special Issue Information

Dear Colleagues,

Optoelectronic and energy materials are of growing interest for a range of emerging technological applications. The ability to control the interaction of freedom in functional materials, that may be combined in different geometrical arrangements, opens up a wide range of functionalities for applications. Moreover, devices can be used to conduct some useful function, but they can also be used to study the physics and combinations of materials. Moreover, nanomaterials provide novel properties which are not found in the same material in its bulk form, and these novel properties might be exploited in a vast range of applications. Semiconducting materials underpin many of the modern technologies in a vast range of contexts.

The Special Issue places an emphasis on original research, and the scope is intentionally broad with performance of various materials relating to optoelectric and energy applied science but are not limited, for example, to 2D heterostructure devices. All scales of analysis and research are welcomed.

Dr. Young Tea Chun
Prof. Dr. Sam Nyung Yi
Guest Editors

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Keywords

  • optoelectronics:optics
  • light-emitting materials
  • displays
  • 3D holographic Energy:energy harvesting
  • photovoltaics
  • batteries
  • supercapacitors
  • storage Nanostructure:materials for nanodevices
  • nanowires
  • quantum dots Heterostructure:organic and inorganic photonic devices
  • 2D materials
  • memory Semiconductor:semiconductor for power systems
  • energy systems
  • thin films

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Published Papers (1 paper)

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Research

15 pages, 3801 KiB  
Article
Understanding the Light Detection in an Integrated Novel Electrophotonic Wavesensor Photodetector
by Joaquín Hernández-Betanzos, Mariano Aceves-Mijares and Alfredo Abelardo González-Fernández
Appl. Sci. 2022, 12(3), 1264; https://doi.org/10.3390/app12031264 - 25 Jan 2022
Cited by 1 | Viewed by 2437
Abstract
This work presents a novel integrable silicon photodetector which can only be conceived as part of a monolithic electrophotonic basic structure formed of a silicon light emitter, waveguide and light detector. That is, it cannot operate as a single electronic or photonic device. [...] Read more.
This work presents a novel integrable silicon photodetector which can only be conceived as part of a monolithic electrophotonic basic structure formed of a silicon light emitter, waveguide and light detector. That is, it cannot operate as a single electronic or photonic device. The detector presents current gain, and photons reach the depletion region straightforward, allowing the detection of low power light produced by silicon light sources currently in use, which is difficult for existing photodetectors. The waveguide core is made of silicon nitride, and it is simultaneously the insulator in a MOS-like device. The light detection unit is intended for novel seamless electrophotonic platforms, and it is called wavesensor. In spite that the device is a MOS-like structure, it is not a MOSFET neither a lateral bipolar transistor, and one of the main differences with the former is that this is a bulk device working in Punch-Through regime. Being a MOS-like structure, it is fully compatible with standard microelectronics technology. A development of the mathematics involved in its operation is carried out in order to understand the physics of the detector, showing a gain factor in the photocurrent. Computer simulations of the fabrication process and photoelectric response of the device confirmed photocurrent values higher than the expected for a photodiode with efficiency = 1, thus demonstrating a new integrable photodetector with gain, capable of detecting light in the range of nW for electrophotonic applications. Full article
(This article belongs to the Special Issue Applied Optoelectric and Energy Materials)
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