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Applied Sciences
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Metamaterials, Quantum and Nanophotonics in the Third Millennium
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Metamaterials, Quantum and Nanophotonics in the Third Millennium

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Optics and Lasers".

Deadline for manuscript submissions: closed (20 September 2024) | Viewed by 5569

Special Issue Editors

Prof. Dr. Eduard Babulak

E-Mail Website
Guest Editor
National Science Foundation (NSF), Alexandria, VA, USA
Interests: computer security; computer networking; Internet of Things; quality of service provision assessment
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Dieter Bimberg

E-Mail Website
Guest Editor
1. Bimberg Chinese-German Center for Green Photonics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
2. Technische Universität Berlin, Center of NanoPhotonics Hardenbergstr. 36, 10623 Berlin, Germany
Interests: ultra-high bit rate VCSELs based on QWs and QDs; energy efficiency; integration with CMOS drivers and nanophotonic structures; high-brilliance edge emitters; q-bit emitters; quantum dot lasers, passive- and active-mode-locked lasers; quantum dot amplifiers (QD amplifiers)
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

This Special Issue comprises some of the most important contributions presented at NANOPHOTONICS2022, the world’s leading conference on nanophotonics and metamaterials. In addition this Issue is open to a restricted number of leading scientists in these rapidly advancing areas to present their latest results.

The Special Issue presents the most important selected papers discussing current research trends in the fields of nanophotonics and metamaterials, such as topological effects in optics, two-dimensional materials, light–matter interaction in nanocavities, plasmonic circuits, thermal engineering, and quantum photonic systems.

Thus, this Special Issue provides insights into current research trends and future research directions and addresses current and future applications and challenges.

Prof. Dr. Eduard Babulak
Prof. Dr. Dieter Bimberg
Guest Editors

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Applied Sciences is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • single quantum dots and q-bit emitters
  • entangled photons
  • Si photonic quantum computing
  • quantum dot photonic devices
  • mode-locked and directly modulated quantum dot lasers
  • qunatum dot VCSELs and nanolasers
  • topological effects in optics
  • two-dimensional materials
  • light–matter interaction in nanocavities
  • plasmonic circuits
  • thermal engineering
  • and quantum photonic systems

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Published Papers (2 papers)

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Research

13 pages, 5109 KiB  
Article
Integrated Deep Ultraviolet Doublet Metalens for Projection Imaging
by Xiaoyan Shi, Fuming Yang, Enzhu Hou and Zhongzhu Liang
Appl. Sci. 2024, 14(3), 1316; https://doi.org/10.3390/app14031316 - 5 Feb 2024
Cited by 1 | Viewed by 2123
Abstract
Metalenses, with their unique modulation of light, are in great demand for many potential applications. As a proof-of-principle demonstration, we focus on designing SiO2 metalenses that operate in the deep ultraviolet region, specifically around 193 nm. Based on the deep ultraviolet metalens [...] Read more.
Metalenses, with their unique modulation of light, are in great demand for many potential applications. As a proof-of-principle demonstration, we focus on designing SiO2 metalenses that operate in the deep ultraviolet region, specifically around 193 nm. Based on the deep ultraviolet metalens proposed in this paper, an integrated deep ultraviolet doublet metalens is further offered. When the incident light is a plane wave with a wavelength of 193 nm, the integrated doublet metalens can reduce the beam size by a factor of 4:1, and the emitted light is flat. The integrated doublet metalens can project the reticle image proportionally, making the projection image clear. The integrated doublet metalens has the best imaging effect at the propagation distance of 2 μm and can tolerate ±3 degrees of incident angle deviation. Our findings establish general and systematic strategies to guide the design of traditional optical lens arrays with excellent integrated doublet metalenses and pave the way for enhanced optical performance in the application of large-relative-aperture deep ultraviolet detection, deep ultraviolet microscope systems, laser beam combining systems, deep ultraviolet lithography systems, etc. Full article
(This article belongs to the Special Issue Metamaterials, Quantum and Nanophotonics in the Third Millennium)
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17 pages, 715 KiB  
Article
Two-Step Relaxation of Non-Equilibrium Electrons in Graphene: The Key to Understanding Pump–Probe Experiments
by Diogo F. P. Cunha, Rui Dias, Manuel J. L. F. Rodrigues and Mikhail I. Vasilevskiy
Appl. Sci. 2024, 14(3), 1250; https://doi.org/10.3390/app14031250 - 2 Feb 2024
Cited by 1 | Viewed by 1683
Abstract
In the majority of experiments targeting nonlinear optical phenomena, the application of high-intensity pulses drives electrons in graphene into a strongly non-equilibrium state. Under these conditions, conventional perturbation theory falls short in explaining graphene’s intricate optical response because of significant deviations in electron [...] Read more.
In the majority of experiments targeting nonlinear optical phenomena, the application of high-intensity pulses drives electrons in graphene into a strongly non-equilibrium state. Under these conditions, conventional perturbation theory falls short in explaining graphene’s intricate optical response because of significant deviations in electron distribution over energy states from the equilibrium Fermi-Dirac one. In this work, we present a two-step relaxation model capable of predicting the transient dynamics of graphene’s carriers out of equilibrium, from the generation of spectrally narrow populations of non-thermalized electrons and holes to the establishment of a hot-electron gas and its subsequent cooling toward equilibrium with the crystal lattice. By comparing our model calculations to experimental results, we demonstrate its reliability and relevance to pump–probe experiments, providing insights into the pivotal role of hot electrons in comprehending ultrafast dynamics in graphene. Full article
(This article belongs to the Special Issue Metamaterials, Quantum and Nanophotonics in the Third Millennium)
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