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High-Voltage Technology and Engineering Enabling Life and Physical Science Advancement

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Applied Physics General".

Deadline for manuscript submissions: 31 July 2025 | Viewed by 3059

Special Issue Editor


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Guest Editor
Lawrence Livermore National Laboratory, Livermore, CA 94551, USA
Interests: accelerator technology; high voltage/pulsed power; power systems

Special Issue Information

Dear Colleagues,

High-voltage technology and engineering play a fundamental role in the advancement of the life and physical sciences. In 1895, Wilhelm Röntgen generated laboratory X-rays using a high-voltage induction coil. Now, X-rays play a fundamental role in healthcare as both a diagnostic tool and in cancer therapies. Robert J. Van de Graaf and later John Cockroft and Ernest Walton built the first charged particle accelerators in the late 1920s and 1930s, respectively; their unique techniques were the foundation for generating mega-volt potentials. These innovations advanced our collective understanding of the atom. In just a century, high-voltage technology has come to serve as a basis for sterilization and controlling the uptake of drugs, managing pollutants, producing and transmitting energy efficiently, and for continuing research.

For this Special Issue, we invite submissions exploring cutting-edge research and recent advances in the field of high-voltage technology and engineering, with an emphasis on scientific and commercial applications. Both theoretical and experimental studies are welcome, as well as comprehensive reviews and survey papers. Specific papers will be selected and highlighted as “invited” and will serve as the foundation for this Special Issue.

Dr. Stephen E. Sampayan
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Applied Sciences is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • high voltage
  • particle accelerator
  • pulsed power
  • fusion
  • electroporation

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Published Papers (2 papers)

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Research

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12 pages, 1817 KiB  
Article
Nanosecond Breakdown Characteristics of C4F7N and Various Mixtures at Pressures Above 1 Atmosphere in Comparison with SF6
by Luke Silvestre, Jakob Matthies, Luke Boswell, Jacob Stephens, James Dickens, Andrew Young and Andreas Neuber
Appl. Sci. 2024, 14(23), 11268; https://doi.org/10.3390/app142311268 - 3 Dec 2024
Viewed by 761
Abstract
This report evaluates the pulsed breakdown performance of C4F7N under a 6.8 kV/ns voltage excitation. The pulsed dielectric strength of C4F7N is compared to SF6 in the same experimental setup, and it is [...] Read more.
This report evaluates the pulsed breakdown performance of C4F7N under a 6.8 kV/ns voltage excitation. The pulsed dielectric strength of C4F7N is compared to SF6 in the same experimental setup, and it is found that C4F7N concentrations of 50% or greater are required to achieve a dielectric strength greater than or equal to SF6. Pure C4F7N demonstrated higher electric field hold-off for longer time periods and less statistical variance under pulsed conditions when compared to SF6. Mixtures of 50%C4F7N with N2 or CO2 as buffer gases showed no appreciable difference in pulsed dielectric strength. Full article
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Review

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31 pages, 9339 KiB  
Review
Photoconductive Semiconductor Switches: Materials, Physics, and Applications
by Vincent Meyers, Lars Voss, Jack D. Flicker, Luciano Garcia Rodriguez, Harold P. Hjalmarson, Jane Lehr, Nicolas Gonzalez, Gregory Pickrell, Soroush Ghandiparsi and Robert Kaplar
Appl. Sci. 2025, 15(2), 645; https://doi.org/10.3390/app15020645 - 10 Jan 2025
Cited by 1 | Viewed by 1610
Abstract
Photoconductive semiconductor switching (PCSS) devices have unique characteristics to address the growing need for electrically isolated, optically gated, picosecond-scale jitter devices capable of operating at high voltage, current, and frequency. The state of the art in material selection, doping, triggering, and system integration [...] Read more.
Photoconductive semiconductor switching (PCSS) devices have unique characteristics to address the growing need for electrically isolated, optically gated, picosecond-scale jitter devices capable of operating at high voltage, current, and frequency. The state of the art in material selection, doping, triggering, and system integration in PCSSs is presented. The material properties and doping considerations of GaN, GaAs, SiC, diamond, and β-Ga2O3 in the fabrication of PCSS devices are discussed. A review of the current understanding of the physics of the high-gain mode known as lock-on is presented. Full article
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