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Journal: Electronics, 2019
Volume: 8
Number: 785

Article: A Surface-Potential-Based Analytical I-V Model of Full-Depletion Single-Gate SOI MOSFETs
Authors: by Chuanzhong Xu, Fei Yu, Gongyi Huang, Wanling Deng, Xiaoyu Ma and Junkai Huang
Link: https://www.mdpi.com/2079-9292/8/7/785

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