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Journal: Electronics, 2022
Volume: 11
Number: 53
53
Article: Memory Characteristics of Thin Film Transistor with Catalytic Metal Layer Induced Crystallized Indium-Gallium-Zinc-Oxide (IGZO) Channel
Authors: by Hoonhee Han, Seokmin Jang, Duho Kim, Taeheun Kim, Hyeoncheol Cho, Heedam Shin and Changhwan Choi
Link: https://www.mdpi.com/2079-9292/11/1/53

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