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Characterization and Photovoltaic Properties of BiFeO3 Thin Films

Department of Materials Science, The University of Shiga Prefecture, 2500 Hassaka, Hikone, Shiga 522-8533, Japan
Author to whom correspondence should be addressed.
Academic Editor: Francesco Di Benedetto
Coatings 2016, 6(4), 68;
Received: 19 August 2016 / Revised: 2 December 2016 / Accepted: 5 December 2016 / Published: 8 December 2016
PDF [3303 KB, uploaded 8 December 2016]


Bismuth ferrite (BiFeO3) thin films were prepared by a spin-coating method. Crystal structure and optical properties of the BiFeO3 films were evaluated using X-ray diffraction. The lattice constants, crystallite size, and energy gap of BiFeO3 films depended on the concentration of the BiFeO3 precursor solution. BiFeO3/CH3NH3PbI3 photovoltaic devices were fabricated to investigate photovoltaic properties of BiFeO3. Current density–voltage characteristics of the photovoltaic devices showed rectifying behavior, indicating that BiFeO3 worked as an electron transport layer in CH3NH3PbI3-based photovoltaic devices. View Full-Text
Keywords: bismuth ferrite; thin films; photovoltaic property; CH3NH3PbI3 bismuth ferrite; thin films; photovoltaic property; CH3NH3PbI3

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Shirahata, Y.; Oku, T. Characterization and Photovoltaic Properties of BiFeO3 Thin Films. Coatings 2016, 6, 68.

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