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Journal: Nanomaterials, 2021
Volume: 11
Number: 3166

Article: Effect of Step Gate Work Function on InGaAs p-TFET for Low Power Switching Applications
Authors: by Sayed Md Tariful Azam, Abu Saleh Md Bakibillah, Md Tanvir Hasan and Md Abdus Samad Kamal
Link: https://www.mdpi.com/2079-4991/11/12/3166

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