Article Versions Notes

Hsiang K-Y, Liao C-Y, Wang J-F, Lou Z-F, Lin C-Y, Chiang S-H, Liu C-W, Hou T-H, Lee M-H. Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf_1−xZr_xO₂ Diodes. Nanomaterials. 2021; 11(10):2685. https://doi.org/10.3390/nano11102685

Hsiang, Kuo-Yu, Chun-Yu Liao, Jer-Fu Wang, Zhao-Feng Lou, Chen-Ying Lin, Shih-Hung Chiang, Chee-Wee Liu, Tuo-Hung Hou, and Min-Hung Lee. 2021. "Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf_1−xZr_xO₂ Diodes" Nanomaterials 11, no. 10: 2685. https://doi.org/10.3390/nano11102685

Hsiang, K.-Y., Liao, C.-Y., Wang, J.-F., Lou, Z.-F., Lin, C.-Y., Chiang, S.-H., Liu, C.-W., Hou, T.-H., & Lee, M.-H. (2021). Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf_1−xZr_xO₂ Diodes. Nanomaterials, 11(10), 2685. https://doi.org/10.3390/nano11102685