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Journal: MicromachinesVolume: 12Number: 709
Article: On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs
- Authors:
- Nicolò Zagni 1,*,
- Alessandro Chini 1 and
- Giovanni Verzellesi 2
- et al.
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