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Journal: Micromachines, 2019
Volume: 10
Number: 91

Article: A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer
Authors: by Youlei Sun, Ying Wang, Jianxiang Tang, Wenju Wang, Yifei Huang and Xiaofei Kuang
Link: https://www.mdpi.com/2072-666X/10/2/91

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