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Journal: Micromachines, 2019
Volume: 10
Number: 723

Article: Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors
Authors: by Dongmin Keum and Hyungtak Kim
Link: https://www.mdpi.com/2072-666X/10/11/723

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