Order Article Reprints

Cai Y, Zhu C, Jiu L, Gong Y, Yu X, Bai J, Esendag V, Wang T. Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional Al_xGa_1−xN Layers. Materials. 2018; 11(10):1968. https://doi.org/10.3390/ma11101968

Cai, Yuefei, Chenqi Zhu, Ling Jiu, Yipin Gong, Xiang Yu, Jie Bai, Volkan Esendag, and Tao Wang. 2018. "Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional Al_xGa_1−xN Layers" Materials 11, no. 10: 1968. https://doi.org/10.3390/ma11101968

Cai, Y., Zhu, C., Jiu, L., Gong, Y., Yu, X., Bai, J., Esendag, V., & Wang, T. (2018). Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional Al_xGa_1−xN Layers. Materials, 11(10), 1968. https://doi.org/10.3390/ma11101968