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Journal: Materials, 2018
Volume: 11
Number: 1968

Article: Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1−xN Layers
Authors: by Yuefei Cai, Chenqi Zhu, Ling Jiu, Yipin Gong, Xiang Yu, Jie Bai, Volkan Esendag and Tao Wang
Link: https://www.mdpi.com/1996-1944/11/10/1968

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