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Open AccessArticle

Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1−xN Layers

Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield S1 3JD, UK
Author to whom correspondence should be addressed.
These authors contributed equally to this work.
Materials 2018, 11(10), 1968;
Received: 1 September 2018 / Revised: 28 September 2018 / Accepted: 10 October 2018 / Published: 13 October 2018
(This article belongs to the Special Issue III-Nitrides Semiconductor Research in the UK and Ireland)
We have designed and then grown a simple structure for high electron mobility transistors (HEMTs) on silicon, where as usual two transitional layers of AlxGa1−xN (x = 0.35, x = 0.17) have been used in order to engineer the induced strain as a result of the large lattice mismatch and large thermal expansion coefficient difference between GaN and silicon. Detailed x-ray reciprocal space mapping (RSM) measurements have been taken in order to study the strain, along with cross-section scanning electron microscope (SEM) images and x-ray diffraction (XRD) curve measurements. It has been found that it is critical to achieve a crack-free GaN HEMT epi-wafer with high crystal quality by obtaining a high quality AlN buffer, and then tuning the proper thickness and aluminium composition of the two transitional AlxGa1−xN layers. Finally, HEMTs with high performance that are fabricated on the epi-wafer have been demonstrated to confirm the success of our strain engineering and above analysis. View Full-Text
Keywords: HEMTs; strain; AlxGa1−xN; crack-free; silicon HEMTs; strain; AlxGa1−xN; crack-free; silicon
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Cai, Y.; Zhu, C.; Jiu, L.; Gong, Y.; Yu, X.; Bai, J.; Esendag, V.; Wang, T. Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1−xN Layers. Materials 2018, 11, 1968.

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