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Open AccessArticle

Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1−xN Layers

Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield S1 3JD, UK
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Author to whom correspondence should be addressed.
These authors contributed equally to this work.
Materials 2018, 11(10), 1968; https://doi.org/10.3390/ma11101968
Received: 1 September 2018 / Revised: 28 September 2018 / Accepted: 10 October 2018 / Published: 13 October 2018
(This article belongs to the Special Issue III-Nitrides Semiconductor Research in the UK and Ireland)
We have designed and then grown a simple structure for high electron mobility transistors (HEMTs) on silicon, where as usual two transitional layers of AlxGa1−xN (x = 0.35, x = 0.17) have been used in order to engineer the induced strain as a result of the large lattice mismatch and large thermal expansion coefficient difference between GaN and silicon. Detailed x-ray reciprocal space mapping (RSM) measurements have been taken in order to study the strain, along with cross-section scanning electron microscope (SEM) images and x-ray diffraction (XRD) curve measurements. It has been found that it is critical to achieve a crack-free GaN HEMT epi-wafer with high crystal quality by obtaining a high quality AlN buffer, and then tuning the proper thickness and aluminium composition of the two transitional AlxGa1−xN layers. Finally, HEMTs with high performance that are fabricated on the epi-wafer have been demonstrated to confirm the success of our strain engineering and above analysis. View Full-Text
Keywords: HEMTs; strain; AlxGa1−xN; crack-free; silicon HEMTs; strain; AlxGa1−xN; crack-free; silicon
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MDPI and ACS Style

Cai, Y.; Zhu, C.; Jiu, L.; Gong, Y.; Yu, X.; Bai, J.; Esendag, V.; Wang, T. Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1−xN Layers. Materials 2018, 11, 1968.

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