Search Results (2,410)

Photocatalytic composite materials (TiO₂/SiO₂/BFSF) were first fabricated using the sol–gel method of loading SiO₂ and TiO₂ on blast furnace slag fibers (BFSFs) in sequence and using them as a new carrier. Then, TG-DTA, XRD, BET, SEM-EDS, and UV-Vis absorption spectra, as well as spectrophotometric measurements, were employed to analyze the physicochemical properties of TiO₂. The influence of SiO₂ coating, the number of impregnations in TiO₂ sol, the calcination temperature, and the number of repeated usages on the activity of TiO₂/SiO₂/BFSF was researched by analyzing the degradation of methylene blue (MB) aqueous solution. The results show that SiO₂ could increase the load of TiO₂, impede the growth of TiO₂ grains, and inhibit the recombination of electron–hole pairs, ultimately enhancing the photocatalytic activity of samples. The activity of TiO₂/SiO₂/BFSF first quickly increased and then slowly decreased with an increase in the loading times of TiO₂ sol and calcination temperature. After three impregnations in TiO₂ sol and calcining at 450 °C for 2.5 h, a uniform and compact anatase TiO₂ thin film was deposited on the surface of TiO₂/SiO₂/BFSF, showing the strongest activity. When this sample was used to degrade MB aqueous solution for 180 min under ultraviolet light irradiation, the degradation proportion reached a maximum of 96%. After four reuses, the degradation ratio could still reach 67%. In addition, three potential photocatalytic mechanisms were proposed. Finally, the high-value-added application of blast furnace slag for preparing photocatalytic composite materials was achieved, successfully turning solid waste into “treasure”. Full article

Ag₂Se has attracted significant attention as a promising alternative to Bi₂Te₃ for near-room-temperature thermoelectric (TE) applications. In this study, flexible Ag₂Se thin films were fabricated via magnetron sputtering under different sputtering power settings, followed by post-deposition annealing to optimize their TE properties. Structural and compositional analyses confirmed the successful synthesis of Ag₂Se films with high crystallinity. Additionally, tuning the sputtering power and annealing temperatures can effectively enhance the electrical conductivity, Seebeck coefficient, and overall power factor. A significant power factor of ~17.4 µW·cm⁻¹·K⁻² at 100 °C was achieved in the 30 W sputtering power and 300 °C annealing sample, pointing out the huge potential of Ag₂Se thin films as self-powered flexible devices. Full article

Thin-film detection technology plays a significant role in particle physics, X-ray imaging and radiation monitoring. In this paper, the detection capability of a Cs₃Cu₂I₅ thin-film scintillator toward α particles is investigated. The flexible thin-film scintillator is fabricated by a facile and cost-effective in situ strategy, exhibiting excellent scintillation properties. Upon α-particle excitation, the light yield of the Cs₃Cu₂I₅ thin-film is 2400 photons/MeV, which greatly benefits its application for single-particle events detection. Moreover, it shows linear energy response within the range of 4.7–5.5 MeV and moderate decay time of 667 ns. We further explored the cryogenic scintillation performance of Cs₃Cu₂I₅@PMMA film. As the temperature decreases from 300 K to 50 K, its light yield gradually increases to 1.3 fold of its original value, while its decay time remains almost unchanged. This scintillator film also shows excellent low-temperature stability and flexible operational stability. This work demonstrates the great potential of the Cs₃Cu₂I₅@PMMA film for the practical utilization in α-particle detection application. Full article

Graphene’s exceptional carrier mobility and broadband absorption make it promising for ultrafast photodetection. However, its low optical absorption limits responsivity, while the absence of a bandgap results in high dark current, constraining the signal-to-noise ratio and efficiency. Although silicon (Si) photodetectors normally offer fabrication compatibility, their performance is severely hindered by interface trap states and optical shading. To overcome these limitations, we demonstrate an epitaxial graphene/n-Si heterojunction photodiode. This device utilizes graphene epitaxially grown on germanium integrated with a transferred Si thin film, eliminating polymer residues and interface defects common in transferred graphene. As a result, the fabricated photodetector achieves an ultralow dark current of 1.2 × 10⁻⁹ A, a high responsivity of 1430 A/W, and self-powered operation at room temperature. This work provides a strategy for high-sensitivity and low-power photodetection and demonstrates the practical integration potential of graphene/Si heterostructures for advanced optoelectronics. Full article

Potassium bromide (KBr) thin films were deposited by resistive thermal evaporation at substrate temperatures ranging from 50 °C to 250 °C to systematically elucidate the temperature-dependent evolution of their physical properties. Structural, morphological, and optical characteristics were examined by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and Fourier transform infrared spectroscopy (FTIR). The results reveal a complex, non-monotonic response to temperature rather than a simple linear trend. As the substrate temperature increases, growth evolves from a mixed polycrystalline texture to a pronounced (200) preferred orientation. Morphological analysis shows that the film surface is smoothest at 150 °C, while the microstructure becomes densest at 200 °C. These structural variations directly modulate the optical constants: the refractive index attains its highest values in the 150–200 °C window, approaching that of bulk KBr. Cryogenic temperature (6 K) FTIR measurements further demonstrate that suppression of multi-phonon absorption markedly enhances the infrared transmittance of the films. Taken together, the data indicate that 150–200 °C constitutes an optimal process window for fabricating KBr films that combine superior crystallinity, low defect density, and high packing density. This study elucidates the temperature-driven structure–property coupling and offers valuable guidance for optimizing high-performance infrared and cryogenic optical components. Full article

Highly integrable silicon carbide (SiC) has emerged as a promising platform for photonic integrated circuits (PICs), offering a comprehensive set of material and optical properties that are ideal for the integration of nonlinear devices and solid-state quantum defects. However, despite significant progress in nanofabrication technology, the development of SiC on an insulator (SiCOI)-based photonics faces challenges due to fabrication-induced material optical losses and complex processing steps. An alternative approach to mitigate these fabrication challenges is the direct deposition of amorphous SiC on an insulator (a-SiCOI). However, there is a lack of systematic studies aimed at producing high optical quality a-SiC thin films, and correspondingly, on evaluating and determining their optical properties in the telecom range. To this end, we have studied a single-source precursor, 1,3,5-trisilacyclohexane (TSCH, C₃H₁₂Si₃), and chemical vapor deposition (CVD) processes for the deposition of SiC thin films in a low-temperature range (650–800 °C) on a multitude of different substrates. We have successfully demonstrated the fabrication of smooth, uniform, and stoichiometric a-SiCOI thin films of 20 nm to 600 nm with a highly controlled growth rate of ~0.5 Å/s and minimal surface roughness of ~5 Å. Spectroscopic ellipsometry and resonant micro-photoluminescence excitation spectroscopy and mapping reveal a high index of refraction (~2.7) and a minimal absorption coefficient (<200 cm⁻¹) in the telecom C-band, demonstrating the high optical quality of the films. These findings establish a strong foundation for scalable production of high-quality a-SiCOI thin films, enabling their application in advanced chip-scale telecom PIC technologies. Full article

High-performance hydrogen gas sensors have gained considerable interest for their crucial function in reducing H₂ explosion risk. Although MoS₂ has good potential for chemical sensing, its application in hydrogen detection at room temperature is limited by slow response and incomplete recovery. In this work, Pd-doped MoS₂ thin films are deposited on a Si substrate, forming Pd-doped MoS₂/Si heterojunctions via magnetron co-sputtering. The incorporation of Pd nanoparticles significantly enhances the catalytic activity for hydrogen adsorption and facilitates more efficient electron transfer. Owing to its distinct structural characteristics and sharp interface properties, the fabricated Pd-doped MoS₂/Si heterojunction device exhibits excellent H₂ sensing performance under room temperature conditions. The gas sensor device achieves an impressive sensing response of ~6.4 × 10³% under 10,000 ppm H₂ concentration, representing a 110% improvement compared to pristine MoS₂. Furthermore, the fabricated heterojunction device demonstrates rapid response and recovery times (24.6/12.2 s), excellent repeatability, strong humidity resistance, and a ppb-level detection limit. These results demonstrate the promising application prospects of Pd-doped MoS₂/Si heterojunctions in the development of advanced gas sensing devices. Full article

Nanofiltration (NF) is considered a competitive purification method for acidic stream treatments. However, conventional thin-film composite NF membranes degrade under acid exposures, limiting their applications in industrial acid treatment. For example, wet-process phosphoric acid contains impurities of multivalent metal ions, but NF membrane technologies for impurity removal under harsh conditions are still immature. In this work, we develop a novel strategy of acid-resistant nanofiltration membranes based on interfacial polymerization (IP) of polyethyleneimine (PEI) and cyanuric chloride (CC) with the s-triazine ring. The IP process was optimized by orthogonal experiments to obtain positively charged PEI-CC membranes with a molecular weight cut-off (MWCO) of 337 Da. We further applied it to the approximate industrial phosphoric acid purification condition. In the tests using a mixed solution containing 20 wt% P₂O₅, 2 g/L Fe³⁺, 2 g/L Al³⁺, and 2 g/L Mg²⁺ at 0.7 MPa and 25 °C, the NF membrane achieved 56% rejection of Fe, Al, and Mg and over 97% permeation of phosphorus. In addition, the PEI-CC membrane exhibited excellent acid resistance in the 48 h dynamic acid permeation experiment. The simple fabrication procedure of PEI-CC membrane has excellent acid resistance and great potential for industrial applications. Full article

In recent years, significant attention has been directed toward the development of coating materials capable of tailoring surface properties for various functional applications. Transition metal nitrides, in particular, have garnered interest due to their superior physical and chemical properties, including high hardness, excellent wear resistance, and strong corrosion resistance. In this study, a fabrication process for CrN-based thin films was developed by combining reactive direct current magnetron sputtering (dcMS) with post-deposition annealing in air. CrN coatings were deposited by reactive dcMS using different argon-nitrogen (Ar:N₂) gas ratios (4:1, 3:1, 2:1, and 1:1), followed by annealing at 550 °C for 1.5 h in ambient air. XRD and EDS analysis revealed that this treatment results in the formation of a composite phase comprising CrN and Cr₂O₃. The resulting coating exhibited favorable mechanical and tribological properties, including a maximum hardness of 12 GPa, a low wear coefficient of 0.254 and a specific wear rate of 7.05 × 10⁻⁶ mm³/N·m, making it a strong candidate for advanced protective coating applications. Full article

This paper presents a novel approach employing localized annealing through Joule heating to enhance the performance of Thin-Film Piezoelectric-on-Silicon (TPoS) MEMS resonators that are crucial for applications in sensing, energy harvesting, frequency filtering, and timing control. Despite recent advancements, piezoelectric MEMS resonators still suffer from anchor-related energy losses and limited quality factors (Qs), posing significant challenges for high-performance applications. This study investigates interface modification to boost the quality factor (Q) and reduce the motional resistance, thus improving the electromechanical coupling coefficient and reducing insertion loss. To balance the trade-off between device miniaturization and performance, this work uniquely applies DC current-induced localized annealing to TPoS MEMS resonators, facilitating metal diffusion at the interface. This process results in the formation of platinum silicide, modifying the resonator’s stiffness and density, consequently enhancing the acoustic velocity and mitigating the side-supporting anchor-related energy dissipations. Experimental results demonstrate a Q-factor enhancement of over 300% (from 916 to 3632) and a reduction in insertion loss by more than 14 dB, underscoring the efficacy of this method for reducing anchor-related dissipations due to the highest annealing temperature at the anchors. The findings not only confirm the feasibility of Joule heating for interface modifications in MEMS resonators but also set a foundation for advancements of this post-fabrication thermal treatment technology. Full article

This work presents an innovative hydrothermal approach for fabricating flexible piezoelectric PZT thin films on 20 μm titanium foil substrates using TiO₂ and SrTiO₃ (STO) interlayers. Three heterostructures (Ti/PZT, Ti/TiO₂/PZT, and Ti/TiO₂/STO/PZT) were synthesized to enable low-temperature growth and improve ferroelectric performance for advanced flexible MEMS. Characterizations including XRD, PFM, and P–E loop analysis evaluated crystallinity, piezoelectric coefficient d₃₃, and polarization behavior. The results demonstrate that the multilayered Ti/TiO₂/STO/PZT structure significantly enhances performance. XRD confirmed the STO buffer layer effectively reduces lattice mismatch with PZT to ~0.76%, promoting stable morphotropic phase boundary (MPB) composition formation. This optimized film exhibited superior piezoelectric and ferroelectric properties, with a high d₃₃ of 113.42 pm/V, representing an ~8.65% increase over unbuffered Ti/PZT samples, and displayed more uniform domain behavior in PFM imaging. Impedance spectroscopy showed the lowest minimum impedance of 8.96 Ω at 10.19 MHz, indicating strong electromechanical coupling. Furthermore, I–V measurements demonstrated significantly suppressed leakage currents in the STO-buffered samples, with current levels ranging from 10⁻¹² A to 10⁻⁹ A over ±3 V. This structure also showed excellent fatigue endurance through one million electrical cycles, confirming its mechanical and electrical stability. These findings highlight the potential of this hydrothermally engineered flexible heterostructure for high-performance actuators and sensors in advanced MEMS applications. Full article

In this study, Hf_0.5Zr_0.5O₂ (HZO) thin-films were deposited using a Co-plasma atomic layer deposition (CPALD) process that combined both remote plasma and direct plasma, for the development of ferroelectric memory devices. Ferroelectric capacitors with a symmetric hybrid TiN/W/HZO/W/TiN electrode structure, incorporating W electrodes as insertion layers, were fabricated. Rapid thermal annealing (RTA) was subsequently employed to control the crystalline phase of the films. The electrical and structural properties of the capacitors were analyzed based on the RTA temperature, and the presence, thickness, and position of the W insertion electrode layer. Consequently, the capacitor with 5 nm-thick W electrode layers inserted on both the top and bottom sides and annealed at 700 °C exhibited the highest remnant polarization (2P_r = 61.0 μC/cm²). Moreover, the symmetric hybrid electrode capacitors annealed at 500–600 °C also exhibited high 2P_r values of approximately 50.4 μC/cm², with a leakage current density of approximately 4 × 10⁻⁵ A/cm² under an electric field of 2.5 MV/cm. The findings of this study are expected to contribute to the development of electrode structures for improved performance of HZO-based ferroelectric memory devices. Full article

A wide-bandgap AgInGaSe₂ (AIGS) thin film was fabricated using molecular beam epitaxy (MBE) via a three-stage method. The influence of Selenium (Se) pressure on the properties of AIGS films and solar cells was studied in detail. It was found that Se pressure played a very important role during the fabrication process, whereby Se pressure was varied from 0.8 × 10⁻³ Torr to 2.5 × 10⁻³ Torr in order to specify the effect of Se pressure. A two-stage mechanism during the production of AIGS solar cells was concluded according to the experimental results. With an increase in Se pressure, the grain size significantly increased due to the supply of the Ag–Se phase; the superficial roughness also increased. When Se pressure was increased to 2.1 × 10⁻³ Torr, the morphology of AIGS changed abruptly and clear grain boundaries were observed with a typical grain size of over 1.5 μm. AIGS films fabricated with a low Se pressure tended to show a higher bandgap due to the formation of anti-site defects such as In and Ga on Ag sites as a result of the insufficient Ag–Se phase. With an increase in Se pressure, the crystallinity of the AIGS film changed from the (220)-orientation to the (112)-orientation. When Se pressure was 2.1 × 10⁻³ Torr, the AIGS solar cell demonstrated its best performance of about 9.6% (Voc: 810.2 mV; Jsc: 16.7 mA/cm²; FF: 71.1%) with an area of 0.2 cm². Full article

During the last few years, the requirements for highly efficient, sustainable, and versatile materials in modern biomedicine, aircraft and aerospace industries, automotive production, and electronic and electrical engineering applications have increased. This has led to the development of new and innovative methods for material modification and optimization. This can be achieved in many different ways, but one such approach is the application of surface thin films. They can be conductive (metallic), semi-conductive (metal-ceramic), or isolating (polymeric). Special emphasis is placed on applying semi-conductive thin films due to their unique properties, be it electrical, chemical, mechanical, or other. The particular thin films of interest are composite ones of the type of transition metal oxide (TMO) and transition metal nitride (TMN), due to their widespread configurations and applications. Regardless of the countless number of studies regarding the application of such films in the aforementioned industrial fields, some further possible investigations are necessary to find optimal solutions for modern problems in this topic. One such problem is the possibility of characterization of the applied thin films, not via textbook approaches, but through a simple, modern solution using their electrical properties. This can be achieved on the basis of measuring the films’ electrical impedance, since all different semi-conductive materials have different impedance values. However, this is a huge practical work that necessitates the collection of a large pool of data and needs to be based on well-established methods for both characterization and formation of the films. A thorough review on the topic of applying thin films using physical vapor deposition techniques (PVD) in the field of different modern applications, and the current results of such investigations are presented. Furthermore, current research regarding the possible methods for applying such films, and the specifics behind them, need to be summarized. Due to this, in the present work, the specifics of applying thin films using PVD methods and their expected structure and properties were evaluated. Special emphasis was paid to the electrical impedance spectroscopy (EIS) method, which is typically used for the investigation and characterization of electrical systems. This method has increased in popularity over the last few years, and its applicability in the characterization of electrical systems that include thin films formed using PVD methods was proven many times over. However, a still lingering question is the applicability of this method for backwards engineering of thin films. Currently, the EIS method is used in combination with traditional techniques such as X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDX), and others. There is, however, a potential to predict the structure and properties of thin films using purely a combination of EIS measurements and complex theoretical models. The current progress in the development of the EIS measurement method was described in the present work, and the trend is such that new theoretical models and new practical testing knowledge was obtained that help implement the method in the field of thin films characterization. Regardless of this progress, much more future work was found to be necessary, in particular, practical measurements (real data) of a large variety of films, in order to build the composition–structure–properties relationship. Full article

Fabric veneer panels were prepared using ethylene-vinyl acetate copolymer film (EVA) as the intermediate layer and poplar plywood as the substrate. Eight fabrics with different compositions were selected for evaluation to screen out fabric materials suitable for poplar plywood veneer. The fabrics were objectively analyzed by bending and draping, compression, and surface roughness, and subjectively evaluated by establishing seven levels of semantic differences. ESEM, surface adhesive properties, and peel resistance tests were used to characterize the microstructure and physical–mechanical properties of the composites. The results show that cotton and linen fabrics and corduroy fabrics are superior to other fabrics in performance, and they are suitable for decorative materials. Because the fibers of the doupioni silk fabric are too thin, and the fibers of felt fabric are randomly staggered, they are not suitable for the surface decoration materials of man-made panels. The acetate veneer surface gluing performance was 1.31 MPa, and the longitudinal peel resistance was 20.98 N, significantly exceeding that of other fabric veneers. Through the subjective and objective analysis of fabrics and gluing performance tests, it was concluded that, compared with fabrics made of natural fibers, man-made fiber fabrics are more suitable for use as surface finishing materials for wood-based panels. The results of this study provide a theoretical basis and process reference for the development of environmentally friendly decorative panels, which can be expanded and applied to furniture, interior decoration, and other fields. Full article