Self-sustained feedback oscillators referenced to MEMS/NEMS resonators have the potential for a wide range of applications in timing and sensing systems. In this paper, we describe a real-time temperature compensation approach to improving the long-t...
In this study, we propose a lateral power-reduced surface field FinFET (LPR-FinFET) to achieve high breakdown voltage and low on-resistance. We investigate the electric field distribution within the reduced surface field (RESURF) structure under reve...
Sensors fabricated by using a silicon-on-insulator (SOI) platform provide promising solutions to issues such as size, power consumption, wavelength-specific nature of end reflectors and difficulty to detect ternary mixture. To address these limitatio...
FinFET devices and Silicon-On-Insulator (SOI) devices are two mainstream technical routes after the planar MOSFET reached the limit for scaling. The SOI FinFET devices combine the benefits of FinFET and SOI devices, which can be further boosted by Si...
A back-illuminated time-of-flight (ToF) image sensor based on a 0.2 µm silicon-on-insulator (SOI) CMOS detector technology using fully-depleted substrate is developed for the light detection and ranging (LiDAR) applications. A fully-depleted 200 µm-t...
Since the oxide/source overlap structure can improve the tunneling probability and on-state current of tunneling field effect transistor (TFET) devices, and the silicon-on-insulator (SOI) structure has the effect of resisting the single event effect,...
As a promising candidate in space radiation hardened applications, silicon-on-insulator (SOI) devices face the severe problem of total ionizing dose (TID) radiation because of the thick buried oxide (BOX) layer. The direct-current current–voltage (DC...
The integration of Single-Photon Avalanche Diodes (SPADs) in CMOS Fully Depleted Silicon-On-Insulator (FD-SOI) technology under a buried oxide (BOX) layer and a silicon film containing transistors makes it possible to realize a 3D SPAD at the chip le...
This study illustrates a type of novel device. Integrating fin field-effect transistors (FinFETs) with current silicon-on-insulator (SOI) wafers provides an excellent platform to fabricate advanced specific devices. An SOI FinFET device consists of t...
Based on silicon-on-insulator (SOI) rib waveguide with large cross-section, a micro integrated surface plasmon resonance (SPR) biochemical sensor platform is proposed. SPR is excited at the deeply etched facet of the bend waveguide by the guiding mod...
The total ionizing dose (TID) effects on single-event upset (SEU) hardness are investigated for two silicon-on-insulator (SOI) static random access memories (SRAMs) with different layout structures in this paper. The contrary changing trends of TID o...
The detection of influenza A virions with a nanoribbon detector (NR detector) has been demonstrated. Chips for the detector have been fabricated based on silicon-on-insulator nanoribbon structures (SOI nanoribbon chip), using a complementary metal-ox...
This study aimed to propose a silicon-on-insulator (SOI)-based charge-trapping synaptic transistor with engineered tunnel barriers using high-k dielectrics for artificial synapse electronics capable of operating at high temperatures. The transistor e...
This paper presents a piezoresistive differential pressure sensor based on a silicon-on-insulator (SOI) structure for low pressure detection from 0 to 30 kPa. In the design phase, the stress distribution on the sensing membrane surface is simulated,...
Ultra-high pressure measurement has significant applications in various fields such as high pressure synthesis of new materials and ultra-high pressure vessel monitoring. This paper proposes a novel ultra-high pressure sensor combining a truncated-co...
This paper presents a micromachined resonant pressure sensor. The sensor is designed to optimize the sensitivity and reduce the cross-talk between the driving electrodes and sensing electrodes. The relationship between the sensitivity of the sensor a...
In this study, a hybrid statistical analysis (Taguchi method supported by analysis of variance (ANOVA) and regression analysis) and numerical analysis (utilizing a Silvaco device simulator) was implemented to optimize the structural parameters of sil...
The micro-electromechanical system (MEMS) sensors are suitable devices for vibrational analysis in complex systems. The Fabry–Pérot interferometer (FPI) is used due to its high sensitivity and immunity to electromagnetic interference (EM...
Over the past few decades, on-chip photonic integrated circuits based on silicon photonics (SiPh) platforms have gained widespread attention due to the fact that they offer many advantages, such as high bandwidth, low loss, compact size, low power co...
Assuming that the 0.6-μm silicon-on-insulator (SOI) complementary metal–oxide–semiconductor (CMOS) technology, different Si-based temperature sensors such as metal-oxide-semiconductor field-effect transistor (MOSFET) (n-channel and p-c...
This paper deals with the manipulation of micro-objects operated by a new concept multi-hinge multi-DoF (degree of freedom) microsystem. The system is composed of a planar 3-DoF microstage and of a set of one-DoF microgrippers, and it is arranged is...
Optical power splitters (OPSs) are utilized extensively in integrated photonic circuits, drawing significant interest in research on power splitters with adjustable splitting ratios. This paper introduces a compact, low-loss 1 × 2 asymmetric mu...
Nanowire or nanobelt sensors based on silicon-on-insulator field-effect transistors (SOI-FETs) are one of the leading directions of label-free biosensors. An essential issue in this device construction type is obtaining reproducible results from elec...
This paper presents a broadband millimeter-wave (mm-Wave) low noise amplifier (LNA) designed in a 22 nm fully depleted silicon-on-insulator (FD-SOI) CMOS technology. Electromagnetic (EM) simulations suggest that the LNA has a 3-dB bandwidth (BW) from...
This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID) radiation. To achieve such performances, the voltage reference is de...
With the development of the micro electromechanical system (MEMS), which widely adopts micro differential pressure sensors (MDPSs), the demand for high-performance MDPSs had continuously increased. Pressure sensors realized using MEMS technology inte...
This paper presents the first demonstration and comparison of two identical oscillator circuits employing piezoelectric zinc oxide (ZnO) microelectromechanical systems (MEMS) resonators, implemented on conventional printed-circuit-board (PCB) and thr...
Minimizing conductive heat losses in Micro-Electro-Mechanical-Systems (MEMS) thermal (hot-film) flow sensors is the key to minimize the sensors’ power consumption and maximize their sensitivity. Through a comprehensive review of literature on M...
A high-sensitivity Mach-Zehnder interferometer (MZI) biochemical sensing platform based on Silicon-in-insulator (SOI) rib waveguide with large cross section is proposed in this paper. Based on the analyses of the evanescent field intensity, the mode...
We have investigated the selective epitaxial growth of GeSi bulk material on silicon-on-insulator substrates by reduced pressure chemical vapor deposition. We employed AFM, SIMS, and Hall measurements, to characterize the GeSi heteroepitaxy quality....
The demand for faster and more efficient optical communication systems has driven significant advancements in integrated photonic technologies, with optical switches playing a pivotal role in high-speed, low-latency data transmission. In this work, w...
In this paper, we extensively analyzed the drain-induced barrier lowering (DIBL) and leakage current characteristics of the proposed partial isolation field-effect transistor (PiFET) structure. We then compared the PiFET with the conventional planar...
An ultrafast Active Quenching—Active Reset (AQAR) circuit is presented for the afterpulsing reduction in a Single Photon Avalanche Diode (SPAD). The proposed circuit is designed in a 28 nm Fully Depleted Silicon On Insulator (FD-SOI) CMOS technology....
The scaled charge trapping (CT) type silicon on insulator (SOI) FinFET flash memories with different blocking layer materials of Al2O3 and SiO2 have successfully been fabricated, and their electrical characteristics including short-channel effect (SC...
Current research in the field of aviation considers actively controlled high-lift structures for future civil airplanes. Therefore, pressure data must be acquired from the airfoil surface without influencing the flow due to sensor application. For ex...
We propose and demonstrate a Mach–Zehnder Interferometer (MZI)-based optical neural network (ONN) to classify and regenerate a four-level pulse-amplitude modulation (PAM4) signal with high inter-symbol interference (ISI) generated experimentall...
We present the design and experimental measurement of tellurium oxide-clad silicon microring resonators with internal Q factors of up to 1.5 × 106, corresponding to a propagation loss of 0.42 dB/cm at wavelengths around 1550 nm. This compares t...
While 3-D microelectromechanical systems (MEMS) allow switching between a large number of ports in optical telecommunication networks, the development of such systems often suffers from design, fabrication and packaging constraints due to the complex...
Optical neural networks (ONN) have become the most promising solution to replacing electronic neural networks, which have the advantages of large bandwidth, low energy consumption, strong parallel processing ability, and super high speed. Silicon-bas...
The full-vectorial finite difference method with perfectly matched layer boundaries is used to identify the single-mode operation region of submicron rib waveguides fabricated using silicon-on-insulator material system. Achieving high-mode power conf...
For the development of minimized and high-rate photonic-integrated fiber Bragg grating interrogation (FBGI) systems, arrayed waveguide grating (AWG) has been widely used as one of the critical components. In this paper, we present an 8-channel SOI-ba...
This paper presents a low-noise amplifier (LNA) with an integrated input and output matching network designed using RF-SOI technology. This LNA was designed with a resistive feedback topology and an inductive peaking technology to provide 600 MHz of...
We report on the design of an ultra-compact integrated wavelength demultiplexer in echelle configuration for the optical O-band realized on silicon-on-insulator technology. The device has four channels with channel spacing of 800 GHz and a small foot...
A table-based method for the estimation of heavy-ion-induced Digital Single Event Transient (DSET) voltage pulse-width in a single logic cell has been developed. The estimation method is based on the actual heavy-ion-induced transient current data in...
Microelectromechanical system (MEMS) pressure sensors have a wide range of applications based on the advantages of mature technology and easy integration. Among them, piezoresistive sensors have attracted great attention with the advantage of simple...
This paper presents recent results on CMOS integrated circuits for automotive radar sensor applications in the 77 GHz frequency band. It is well demonstrated that nano-scale CMOS technologies are the best solution for the implementation of low-cost a...
Micro-opto-electro-mechanical (MOEM) accelerometers that can measure small accelerations are attracting growing attention thanks to their considerable advantages—such as high sensitivity and immunity to electromagnetic noise—over their ri...
In this paper, the degradation mechanism of the RF performance of 22 nm fully depleted (FD) silicon-on-insulator nMOSFETs at different total ionizing dose levels has been investigated. The RF figures of merit (the cut-off frequency fT, maximum oscill...
In this paper, the experimental methodology for the single-crystal circular plate deformation measurement and subsequent procedure for the quantitation of its mechanical properties are developed. The procedure is based on a new numerical-analytical s...
This work presents a laterally rotating micromachined platform integrated under optical waveguides to control the in-plane propagation direction of light within a die to select one of multiple outputs. The platform is designed to exhibit low constant...
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