Efficiency- and Reliability-Oriented Design of Power Electronic Devices, Converters, and Systems

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Power Electronics".

Deadline for manuscript submissions: 15 April 2026 | Viewed by 7134

Special Issue Editor


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Guest Editor
Energy Technology, Aalborg University, Aalborg 9100, Denmark
Interests: optimal control of power electronic converters; dual-active-bridge (DAB) converters; multilevel converters; digital twin modeling of power electronic converters

Special Issue Information

Dear Colleagues,

Efficiency and reliability are two major issues of power electronic devices, converters, and systems that strongly affect their long-term stable, efficient, and robust operation. Therefore, efficiency- and reliability-oriented design is a crucial research topic in a variety of areas, including modeling, assessment, control, hardware design, and prototype demonstration. This Special Issue aims to reveal the current research, challenges, and prospects related to the efficiency- and reliability-oriented design of power electronics. Topics that will be covered include, but are not limited to, the following:

  • The modeling, simulation, and assessment of the efficiency and reliability of power components, converters, and systems.
  • Control strategies to improve the efficiency of power electronic converters and systems.
  • Control strategies to enhance reliability such as voltage and current stress mitigation, power loss and thermal balancing, fault tolerance, and so on.
  • Optimal hardware design such as power device selection, topology improvement, protection systems, and so on.
  • Prototype demonstration with efficiency- and reliability-oriented design.
  • State-of-the-art reviews on efficiency- and reliability-oriented design.

Dr. Chaochao Song
Guest Editor

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Keywords

  • power electronics
  • efficiency
  • reliability
  • optimal control
  • hardware design

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Published Papers (5 papers)

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Research

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18 pages, 3932 KB  
Article
Drain-Voltage Assessment-Based RC Snubber Design Approach for GaN HEMT Flyback Converters
by Byeong-Je Park, Chae-Jeong Hwang, Geon-Ung Park, Min-Su Park and Daeyong Shim
Electronics 2026, 15(2), 271; https://doi.org/10.3390/electronics15020271 - 7 Jan 2026
Viewed by 429
Abstract
Conventional RC snubber design relies on oscillation frequency-based estimation, which is often influenced by uncontrolled parasitic elements and can therefore limit the accuracy of surge voltage prediction in GaN HEMT flyback converters. To overcome this limitation, a drain-voltage assessment-based design approach is introduced, [...] Read more.
Conventional RC snubber design relies on oscillation frequency-based estimation, which is often influenced by uncontrolled parasitic elements and can therefore limit the accuracy of surge voltage prediction in GaN HEMT flyback converters. To overcome this limitation, a drain-voltage assessment-based design approach is introduced, in which the snubber parameters are extracted directly from the measured voltage characteristics during the turn off transition. This method allows the surge voltage to be modeled more precisely and enables the snubber capacitance to be selected without unnecessary oversizing. Simulation results using the GaN Systems GS66516T device show that the proposed approach reduces the total power loss by 27.67% and 21.84% relative to two empirical design methods and achieves up to 53.64% lower loss compared with other RC combinations in the explored design space. The method suppresses the surge voltage from 877 V to 556 V, which closely aligns with the design target of 550 V, whereas the empirical methods result in maximum voltages of 637 V and 603 V. Finally, the thermal feasibility of the snubber resistor is analytically assessed, indicating that the estimated temperature rise remains within the safe operating range of commercial components. Full article
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16 pages, 3072 KB  
Article
Vibration Suppression Strategy for Bearingless Interior Permanent Magnet Synchronous Motor Based on Proportional–Integral–Resonant Controller
by Yizhou Hua, Chenghao Yao and Zhenghui Zhao
Electronics 2025, 14(22), 4517; https://doi.org/10.3390/electronics14224517 - 19 Nov 2025
Viewed by 504
Abstract
To address the vibration issues in bearingless interior permanent magnet synchronous motors (BIPMSMs) caused by rotor mass unbalance and inverter dead-time (DT) effects during operation, a vibration suppression strategy based on a Proportional–Integral–Resonant (PIR) controller is proposed. Firstly, the mathematical model of the [...] Read more.
To address the vibration issues in bearingless interior permanent magnet synchronous motors (BIPMSMs) caused by rotor mass unbalance and inverter dead-time (DT) effects during operation, a vibration suppression strategy based on a Proportional–Integral–Resonant (PIR) controller is proposed. Firstly, the mathematical model of the BIPMSM is established, and the principle of suspension force generation is analyzed. Secondly, the mechanism underlying rotor vibration is theoretically investigated. Thirdly, a PIR controller is designed by connecting a modified Proportional–Resonant (PR) controller in parallel with a Proportional–Integral (PI) controller. The proposed controller combines the ideal PR controller’s characteristic of achieving infinite gain at the resonant frequency, enabling zero steady-state error tracking for sinusoidal signals at the resonant frequency. Finally, a vibration suppression system based on the PIR controller is constructed, and simulation experiments are conducted for verification. The simulation results show that the PIR controller effectively reduces both rotor mass unbalance vibration and DT vibration in the BIPMSM, while also suppressing current harmonics during the motor’s operation. Full article
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15 pages, 2610 KB  
Article
Parameter Identification of SiC MOSFET Half-Bridge Converters Using a Multi-Objective Optimization Method
by Salvatore Monteleone, Luigi Danilo Tornello, Davide Patti, Giacomo Scelba, Maurizio Palesi, Enrico Russo, Mario Pulvirenti and Luciano Salvo
Electronics 2025, 14(22), 4458; https://doi.org/10.3390/electronics14224458 - 15 Nov 2025
Viewed by 455
Abstract
Silicon carbide (SiC) power converters are attracting increasing interest due to their significant advantages in terms of efficiency, switching speed, and greater temperature tolerance compared to traditional silicon-based converters. Tools to improve the design process, such as those to predict the switching behavior [...] Read more.
Silicon carbide (SiC) power converters are attracting increasing interest due to their significant advantages in terms of efficiency, switching speed, and greater temperature tolerance compared to traditional silicon-based converters. Tools to improve the design process, such as those to predict the switching behavior of silicon carbide-based power converters, can be of great help, e.g., in studying critical electrical/thermal stress in power devices. This work aims to present an effective multi-objective optimization method to identify the main parasitic parameters of a SiC half-bridge power converter related to the board layout and device packaging. This goal was achieved by minimizing the errors between the system responses carried out by the simulated power converter and the measurements collected from a limited number of experimental tests. The feasibility and effectiveness of the method are verified by tests performed on a 1200 V, 75 A, SiC half-bridge converter. Although this methodology has been validated for a specific converter topology, it can be extended to model more complex power converter structures. Full article
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21 pages, 2388 KB  
Article
MTBF-PoL Reliability Evaluation and Comparison Using Prediction Standard MIL-HDBK-217F vs. SN 29500
by Dan Butnicu and Gabriel Bonteanu
Electronics 2025, 14(13), 2538; https://doi.org/10.3390/electronics14132538 - 23 Jun 2025
Cited by 1 | Viewed by 3880
Abstract
In the design of military, automotive, medical, space, and professional equipment, it is essential to demonstrate that devices can operate for a specific duration with a given level of confidence. Reliability must be considered in the design process, which can involve component selection, [...] Read more.
In the design of military, automotive, medical, space, and professional equipment, it is essential to demonstrate that devices can operate for a specific duration with a given level of confidence. Reliability must be considered in the design process, which can involve component selection, component testing, and mitigation techniques such as redundancy and forward error correction (FEC). In modern DC–DC converters, a higher level of reliability is now a mandatory requirement—the ISO 26262, for example, acts as the guidance to provide the appropriate standardized requirements, processes and risk based approach, and it determines integrity levels (known as automotive safety integrity levels or ASILs). The purpose is to reduce risks caused by systematic and random failures to an appropriate level of acceptance. Since the release of MIL-HDBK-217F Notice 2 in 1995, newer standards for predicting failure rates have emerged in the electronic systems reliability market. These updated standards were introduced to address the limitations of the older standards, particularly in relation to advanced component technologies. Numerous studies have shown that the output capacitor bank is one of the most critical components concerning reliability. This work focuses on calculating the failure rates of an output capacitor bank and a MOSFET transistor pair used in a high-current, low-voltage buck converter. The failure rates are calculated using both the latest prediction standard, SN 29500, and the previous MIL-HDBK standard. This comparison serves as a valuable tool for selecting the output capacitor during the early stages of design. Both simulations and experimental setups were employed to measure the temperatures of the components. The SN 29500 standard is particularly beneficial for components operating in harsh environments, as it provides up-to-date failure rate data and stress models. The environmental conditions for the components were defined using a standard point of load (PoL) buck converter for both calculation methods. Results are compared by considering the impact of component temperature and by applying specific parameters such as reference and operating conditions. This kind of comparison is useful for circuit designers, especially in the field of Power electronics when the concept of designing with reliability in mind is adopted. Full article
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Review

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19 pages, 1317 KB  
Review
Integrated High-Voltage Bidirectional Protection Switches with Overcurrent Protection: Review and Design Guide
by Justin Pabot, Mostafa Amer, Yvon Savaria and Ahmad Hassan
Electronics 2025, 14(19), 3819; https://doi.org/10.3390/electronics14193819 - 26 Sep 2025
Viewed by 1422
Abstract
Protecting sensitive electronic interfaces is critical in industrial applications, where exposure to harsh conditions and fault events is common. This paper reviews and compares circuit techniques for the design of bidirectional protection switches, highlighting key features such as analog switching, high-voltage capability, thermal [...] Read more.
Protecting sensitive electronic interfaces is critical in industrial applications, where exposure to harsh conditions and fault events is common. This paper reviews and compares circuit techniques for the design of bidirectional protection switches, highlighting key features such as analog switching, high-voltage capability, thermal shutdown, galvanic input isolation, and adjustable current limiting. Based on this review, we propose a universal architecture that combines the most suitable building blocks identified in the literature, with a focus on options that would enable monolithic integration in high-voltage silicon-on-insulator (SOI) technology and capable of delivering up to 2 A at a maximum voltage of 200 V. The proposed architecture is intended as a design guide for realizing a universal switch, rather than a fabricated implementation. To demonstrate system-level interactions, behavioral MATLAB/Simulink (R2024b) simulations are presented using generic components, which show expected functional responses but are not tied to process-specific device models. Full article
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