Search Results (2,056)

With the rapid development of information technology and semiconductor technology, the iteration speed of electronic devices has accelerated in an unprecedented manner, and the market demand for miniaturized, highly integrated, and highly intelligent devices continues to rise. But when these electronic devices operate at high power, the electronic components generate a large amount of integrated heat. Due to the limitations of existing heat dissipation channels, the current heat dissipation performance of electronic packaging materials is struggling to meet practical needs, resulting in heat accumulation and high temperatures inside the equipment, seriously affecting operational stability. For electronic devices that require high energy density and fast signal transmission, improving the heat dissipation capability of electronic packaging materials can significantly enhance their application prospects. In order to improve the thermal conductivity of composite materials, hexagonal boron nitride (h-BN) was selected as the thermal filling material in this paper. The BMI resin was structurally modified through molecular structure design. The results showed that the micro-branched structure and h-BN synergistically improved the thermal conductivity and insulation performance of the composite material, with a thermal conductivity coefficient of 1.51 W/(m·K) and a significant improvement in insulation performance. The core mechanism is the optimization of the dispersion state of h-BN filler in the matrix resin through the free volume in the micro-branched structure, which improves the thermal conductivity of the composite material while maintaining high insulation. Full article

This Review examines up-to-date advancements in the integration of biomolecules and solar energy technologies, with a particular focus on biohybrid photovoltaic systems. Biomolecules have recently garnered increasing interest as functional components in a wide range of solar cell architectures, since they offer a huge variety of structural, optical, and electronic properties, useful to fulfill multiple roles within photovoltaic devices. These roles span from acting as light-harvesting sensitizers and charge transport mediators to serving as micro- and nanoscale structural scaffolds, rheological modifiers, and interfacial stabilizers. In this Review, a comprehensive overview of the state of the art about the integration of biomolecules across the various generations of photovoltaics is provided. The functional roles of pigments, DNA, proteins, and polysaccharides are critically reported improvements and limits associated with the use of biological molecules in optoelectronics. The molecular mechanisms underlying the interaction between biomolecules and semiconductors are also discussed as essential for a functional integration of biomolecules in solar cells. Finally, this Review shows the current state of the art, and the most significant results achieved in the use of biomolecules in solar cells, with the main scope of outlining some guidelines for future further developments in the field of biohybrid photovoltaics. Full article

Metasurfaces have drawn extensive research attention for their unique optical properties and vast application potential. Among the various resonant modes induced in metasurfaces, BIC and electric anapole modes stand out as particularly interesting due to their distinctive physical characteristics. In this work, we designed and investigated novel dimeric dumbbell-shaped metasurfaces incorporating two independently tunable asymmetric parameters. This structural innovation enables the simultaneous excitation of both electric anapole and QBIC modes under normally incident MIR illumination. More importantly, by adjusting these two asymmetric parameters, one can independently tune the resonance peaks of the two modes, thereby overcoming the performance limits of conventional single-peak modulation. This metasurface design demonstrates outstanding performance for dielectric environment-sensing applications. We conducted a comprehensive investigation of the sensing sensitivity for dumbbell-shaped metasurfaces of various geometries. Our simulation results show that the circular-shaped configuration achieved high sensitivity, reaching 20,930 GHz/RIU. This work offers a novel design paradigm for multi-mode control and functionalization of metasurface structures. Full article

This paper presents the first hybrid supply modulator (HSM) designed for envelope tracking power amplifiers (ET-PAs) in base station applications. The focus is on a rail-to-rail Class-AB linear amplifier (LA) optimized for high-voltage and wide-bandwidth operation. The LA is designed using 130 nm BCD technology, utilizing Laterally Diffused Metal-Oxide Semiconductor (LDMOS) transistors for high-voltage operation and incorporating shielding MOSFETs to protect the low-voltage devices. The circuit utilizes dual power supply domains (5 V and 30 V) to improve power efficiency. The proposed LA achieves a bandwidth of 100 MHz and a slew rate of +1003/−852 V/$\mathsf{\mu }\mathrm{s}$, with a quiescent power consumption of 0.89 W. Transient simulations using a 50 MHz bandwidth 5G NR envelope input demonstrate that the proposed HSM achieves a power efficiency of 83%. Consequently, the proposed HSM supports high-output (100 W) wideband 5G NR transmission with enhanced efficiency. Full article

AlGaN-based high-electron-mobility transistors are critical for next-generation power electronics and radio-frequency applications, yet achieving stable enhancement-mode operation with a high threshold voltage remains a key challenge. In this work, we designed p-AlGaN superlattices with different structures and performed energy band structure simulations using the device simulation software Silvaco. The results demonstrate that thin barrier structures lead to reduced acceptor incorporation, thereby decreasing the number of ionized acceptors, while facilitating vertical hole transport. Superlattice samples with varying periodic thicknesses were grown via metal-organic chemical vapor deposition, and their crystalline quality and electrical properties were characterized. The findings reveal that although gradient-thickness barriers contribute to enhancing hole concentration, the presence of thick barrier layers restricts hole tunneling and induces stronger scattering, ultimately increasing resistivity. In addition, we simulated the structure of the enhancement-mode HEMT with p-AlGaN as the under-gate material. Analysis of its energy band structure and channel carrier concentration indicates that adopting p-AlGaN superlattices as the under-gate material facilitates achieving a higher threshold voltage in enhancement-mode HEMT devices, which is crucial for improving device reliability and reducing power loss in practical applications such as electric vehicles. Full article

In advanced Complementary Metal-Oxide-Semiconductor (CMOS) technologies, where diminished feature sizes amplify radiation-induced soft errors, the optimization of fault-tolerant circuit designs requires detailed transistor-level analysis of reliability–performance trade-offs. As a fundamental building block in digital systems and critical data paths, the 2:1 multiplexer, widely used in data-path routing, clock networks, and reconfigurable systems, provides a critical benchmark for assessing radiation-hardened design methodologies. In this context, this work aims to analyze the power consumption, area overhead, and delay of 2:1 multiplexer designs under transient fault conditions, employing the CMOS and Differential Cascode Voltage Switch Logic (DCVSL) logic styles and mitigation strategies. Electrical simulations were conducted using 32 nm high-performance predictive technology, evaluating both the original circuit versions and modified variants incorporating three mitigation strategies: transistor sizing, D-Cells, and C-Elements. Key metrics, including power consumption, delay, area, and radiation robustness, were analyzed. The C-Element and transistor sizing techniques ensure satisfactory robustness for all the circuits analyzed, with a significant impact on delay, power consumption, and area. Although the D-Cell technique alone provides significant improvements, it is not enough to achieve adequate levels of robustness. Full article

Terahertz (THz) frequencies, spanning from 0.1 to 1 THz, are poised to play a pivotal role in the development of future 6G wireless communication systems. These systems aim to utilize photonic technologies to enable ultra-high data rates—on the order of terabits per second—while maintaining low latency and high efficiency. In this work, we present a novel photonic method for generating sub-THz vector signals within the THz band, employing a semiconductor optical amplifier (SOA) and phase modulator (PM) to create an optical frequency comb, combined with in-phase and quadrature (IQ) modulation techniques. We demonstrate, both through simulation and experimental setup, the generation and successful transmission of a 0.1 THz vector. The process involves driving the PM with a 12.5 GHz radio frequency signal to produce the optical comb; then, heterodyne beating in a uni-traveling carrier photodiode (UTC-PD) generates the 0.1 THz radio frequency signal. This signal is transmitted over distances of up to 30 km using single-mode fiber. The resulting 0.1 THz electrical vector signal, modulated with quadrature phase shift keying (QPSK), achieves a bit error ratio (BER) below the hard-decision forward error correction (HD-FEC) threshold of ${3.8 \times 10}^{-3}$. To the best of our knowledge, this is the first experimental demonstration of a 0.1 THz photonic vector THz wave based on an SOA and a simple PM-driven optical frequency comb. Full article

With continuous advancements in semiconductor technology, mastering efficient designs of high-quality and advanced chips has become an important part of science and technology education. Chip performances will determine the futures of various aspects of societies. However, novice students often encounter difficulties in learning digital chip designs using Verilog programming, a common hardware design language. An efficient self-study system for supporting them that can offer various exercise problems, such that any answer is marked automatically, is in strong demand. In this paper, we design and implement a web-based Verilog programming learning assistant system (VPLAS), based on our previous works on software programming. Using a heuristic and guided learning method, VPLAS leads students to learn the basic circuit syntax step by step, until they acquire high-quality digital integrated circuit design abilities through self-study. For evaluation, we assign the proposal to 50 undergraduate students at the National Taipei University of Technology, Taiwan, who are taking the introductory chip-design course, and confirm that their learning outcomes using VPLAS together are far better than those obtained when following a traditional method. In our final statistics, students achieved an average initial accuracy rate of over 70% on their first attempts at answering questions after learning through our website’s tutorials. With the help of the system’s instant automated grading and rapid feedback, their average accuracy rate eventually exceeded 99%. This clearly demonstrates that our system effectively enables students to independently master Verilog circuit knowledge through self-directed learning. Full article

This study presents a photoresist-free patterning method for solution-processed indium zinc oxide (IZO) thin films using two photochemical exposure techniques, namely pulsed ultraviolet (UV) light and UV-ozone, and a plasma-based method using oxygen (O₂) plasma. Pulsed UV light delivers short, high-intensity flashes of light that induce localised photochemical reactions with minimal thermal damage, whereas UV-ozone enables smooth and uniform surface oxidation through continuous low-pressure UV irradiation combined with in situ ozone generation. By contrast, O₂ plasma generates ionised oxygen species via radio frequency (RF) discharge, allowing rapid surface activation, although surface damage may occur because of energetic ion bombardment. All three approaches enabled pattern formation without the use of conventional photolithography or chemical developers, and the UV-ozone method produced the most uniform and clearly defined patterns. The patterned IZO films were applied as active layers in bottom-gate top-contact thin-film transistors, all of which exhibited functional operation, with the UV-ozone-patterned devices exhibiting the most favourable electrical performance. This comparative study demonstrates the potential of photochemical and plasma-assisted approaches as eco-friendly and scalable strategies for next-generation IZO patterning in electronic device applications. Full article

The control of following motion under mesoscale gap flow fields has important applications. The flexible characteristics of the plant, wideband time-varying disturbances caused by the flow field, and requirements of high precision and low overshoot make achieving submicron level accuracy a significant challenge for traditional control methods. This study adopts the control concept of Disturbance Observer Control (DOBC) and uses H_∞ mixed-sensitivity shaping technology to design a Q-filter. Simultaneously, multiple control techniques, such as high-order reference trajectory planning, Proportional-Integral-Derivative (PID) control, low-pass filtering, notch filtering, lead lag correction, and disturbance rejection filtering, are applied to obtain a control system with a high open-loop gain, sufficient phase margin, and stable closed-loop system. Compared to traditional control methods, the new method can increase the open-loop gain by 15 times and the open-loop bandwidth by 8%. We even observed a 150-time increase of the open-loop gain at the peak frequency. Ultimately, the method achieves submicron level accuracy, making important advances in solving the control problem of semiconductor equipment. Full article

Nanoparticle floating gate (NPFG) transistors have gained attention as synaptic devices due to their discrete charge storage capability, which minimizes leakage currents and enhances the memory window. In this study, we propose and evaluate a mesh-type floating gate transistor (Mesh-FGT) designed to emulate the characteristics of NPFG transistors. Individual floating gates with dimensions of 3 µm × 3 µm are arranged in an array configuration to form the floating gate structure. The Mesh-FGT is composed of an Al/Pt/Cr/HfO₂/Pt/Cr/HfO₂/SiO₂/SOI (silicon-on-insulator) stack. Threshold voltages (Vth) extracted from the transfer and output curves followed Gaussian distributions with means of 0.063 V (σ = 0.100 V) and 1.810 V (σ = 0.190 V) for the erase (ERS) and program (PGM) states, respectively. Synaptic potentiation and depression were successfully demonstrated in a multi-level implementation by varying the drain current (I_ds) and Vth. The Mesh-FGT exhibited high immunity to leakage current, excellent repeatability and retention, and a stable memory window that initially measured 2.4 V. These findings underscore the potential of the Mesh-FGT as a high-performance neuromorphic device, with promising applications in array device architectures and neuromorphic neural network implementations. Full article

Ozonation and ozone-based advanced oxidation processes, including ozone/hydrogen peroxide and ozone/ultraviolet irradiation, have been extensively studied for their efficacy in treating wastewater across various industries. While sectors such as pulp and paper, textile, food and beverage, microelectronics, and municipal wastewater have successfully implemented ozone at full scale, others have yet to fully embrace these technologies’ effectiveness. This review article examines recent publications from the past two decades, exploring novel applications of ozone-based technologies in treating wastewater from diverse sectors, including food and beverage, agriculture, aquaculture, textile, pulp and paper, oil and gas, medical and pharmaceutical manufacturing, pesticides, cosmetics, cigarettes, latex, cork manufacturing, semiconductors, and electroplating industries. The review underscores ozone’s broad applicability in degrading recalcitrant synthetic and natural organics, thereby reducing toxicity and enhancing biodegradability in industrial effluents. Additionally, ozone-based treatments prove highly effective in disinfecting pathogenic microorganisms present in these effluents. Continued research and application of these ozonation and ozone-based advanced oxidation processes hold promise for addressing environmental challenges and advancing sustainable wastewater management practices globally. Full article

As semiconductor manufacturing advances into the angstrom-scale era characterized by three-dimensional integration, conventional metrology technologies face fundamental limitations regarding accuracy, speed, and non-destructiveness. Although optical spectroscopy has emerged as a prominent research focus, its application in complex manufacturing scenarios continues to confront significant technical barriers. This review establishes three concrete objectives: To categorize AI–optical spectroscopy integration paradigms spanning forward surrogate modeling, inverse prediction, physics-informed neural networks (PINNs), and multi-level architectures; to benchmark their efficacy against critical industrial metrology challenges including tool-to-tool (T2T) matching and high-aspect-ratio (HAR) structure characterization; and to identify unresolved bottlenecks for guiding next-generation intelligent semiconductor metrology. By categorically elaborating on the innovative applications of AI algorithms—such as forward surrogate models, inverse modeling techniques, physics-informed neural networks (PINNs), and multi-level network architectures—in optical spectroscopy, this work methodically assesses the implementation efficacy and limitations of each technical pathway. Through actual application case studies involving J-profiler software 5.0 and associated algorithms, this review validates the significant efficacy of AI technologies in addressing critical industrial challenges, including tool-to-tool (T2T) matching. The research demonstrates that the fusion of AI and optical spectroscopy delivers technological breakthroughs for semiconductor metrology; however, persistent challenges remain concerning data veracity, insufficient datasets, and cross-scale compatibility. Future research should prioritize enhancing model generalization capability, optimizing data acquisition and utilization strategies, and balancing algorithm real-time performance with accuracy, thereby catalyzing the transformation of semiconductor manufacturing towards an intelligence-driven advanced metrology paradigm. Full article

Indium-based oxide semiconductors have been commercialized because of their excellent electrical properties, but the high cost, limited availability, and environmental toxicity of indium necessitate the development of alternative materials. Among the most promising candidates, zinc–tin oxide (ZTO) is an indium-free oxide semiconductor with considerable potential, but its relatively low carrier mobility and inherent limitations in thin-film quality demand further performance enhancements. This paper proposes a new approach to overcome these challenges by incorporating single-walled carbon nanotubes (SWNTs) as conductive fillers into the ZTO matrix and using a layer-by-layer multiple coating process to construct nanocomposite thin films. As a result, ZTO/SWNTs (0.07 wt.%) thin-film transistors (TFTs) fabricated with three coating cycles exhibited a high saturation mobility of 18.72 cm²/V·s, a threshold voltage of 0.84 V, and a subthreshold swing of 0.51 V/dec. These values represent an approximately four-fold improvement in mobility compared to ZTO TFT, showing that the multiple-coating-based nanocomposite strategy can effectively overcome the fundamental limitations. This study confirms the feasibility of achieving high-performance oxide semiconductor transistors without indium, providing a sustainable pathway for next-generation flexible electronics and display technologies. Full article

CdS nanowires have garnered considerable attention lately for their promising potential in next-generation nanolaser devices, attributed to their relatively high stability and exceptional emission efficiency within the Ⅱ–Ⅵ semiconductor family. In this study, tin-doped CdS nanowires with varying dimensions were synthesized, and the underlying mechanisms responsible for the formation of micro-cavities within these nanowires were systematically explored through scanning electron microscopy (SEM) analysis and photoluminescence mapping. The results show that a very distinct hexagonal-shaped micro-cavity is observed on the cross-section of CdS nanowires, and the size of the micro-cavity is determined by the radius of the nanowire. Additionally, through the use of angle-resolved micro-fluorescence Fourier imaging technology, it is found that under high excitation density conditions, the micro-cavity mode is more prominent at higher collection angles, which is consistent with the mode of the wall-pass cavity micro-cavity. Finally, the formation of the full reflection spectrum of the micro-cavity mode is confirmed through the wavelength shift and intensity shift phenomena related to the excitation power. These results further deepen our understanding of the micro-cavity modes in tin-doped cadmium sulfide nanowires, which may be of great significance for the application of these nanowires in new optical devices. Full article