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Electronics
Special Issues
Analog/Mixed Signal Integrated Circuit Design
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Analog/Mixed Signal Integrated Circuit Design

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Circuit and Signal Processing".

Deadline for manuscript submissions: 15 November 2025 | Viewed by 1748

Special Issue Editors

Dr. Chengying Chen

E-Mail Website
Guest Editor
School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 966675, China
Interests: voltage controlled oscillators; analog-to-digital converter; continuous time
Dr. Xinghua Wang

E-Mail Website
Guest Editor
1. School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
2. BIT Chongqing Institute of Microelectronics and Microsystems, Chongqing 401332, China
3. Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China
4. Advanced Technology Research Institute, Beijing Institute of Technology, Jinan 250101, China
Interests: AFE; computing-in-memory
Dr. Xiaoran Li

E-Mail Website
Guest Editor
School of Information and Electronics, Beijing Institute of Technology, Beijing 100081, China
Interests: analog; RF/MMW IC design

Special Issue Information

Dear Colleagues,

Analog/mixed-signal-integrated circuits are an essential component for the collection, reception, and processing analysis of signals from the natural world, which are crucial in key areas such as audio and video signal processing, wireless communication, high-resolution instrumentation, and power management systems. They are optimized for tasks like signal amplification, filtering, and analog-to-digital conversion, while providing excellent performance in noise cancellation and bandwidth management. These circuits are cost-effective and help to reduce the complexity of systems. To meet specific application requirements, analog/mixed-signal-integrated circuits must offer high resolution and superior linearity, which are essential for maintaining signal integrity.

This Special Issue aims to collect original research articles on analog/mixed-signal-integrated circuit design. The topics of interest for this Special Issue include, but are not limited to, the following:

  • Analog-to-digital/digital-to-analog convertor;
  • Operational amplifier;
  • Filters;
  • Oscillator;
  • RF and microwave circuit;
  • Power management circuit;
  • Interface circuit;
  • Processor;
  • Computing-in-memory.

Dr. Chengying Chen
Dr. Xinghua Wang
Dr. Xiaoran Li
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • analog-to-digital/digital-to-analog convertor
  • operational amplifier
  • filters
  • oscillator
  • RF and microwave circuit
  • power management circuit
  • interface circuit
  • processor
  • computing-in-memory

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Published Papers (3 papers)

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Research

22 pages, 38738 KiB  
Article
A 0.6 V 68.2 dB 0.42 µW SAR-ΣΔ ADC for ASIC Chip in 0.18 µm CMOS
by Xinyu Li, Kentaro Yoshioka, Zhongfeng Wang, Jun Lin and Congyi Zhu
Electronics 2025, 14(10), 2030; https://doi.org/10.3390/electronics14102030 - 16 May 2025
Viewed by 48
Abstract
This paper presents a successive approximation register (SAR) and incremental sigma-delta modulator (ISDM) hybrid analog-to-digital converter (ADC) that operated at a minimum voltage supply of 0.575 V. A thorough analysis of the non-linearities caused by PVT variations and common-mode voltage (VCM) shifts in [...] Read more.
This paper presents a successive approximation register (SAR) and incremental sigma-delta modulator (ISDM) hybrid analog-to-digital converter (ADC) that operated at a minimum voltage supply of 0.575 V. A thorough analysis of the non-linearities caused by PVT variations and common-mode voltage (VCM) shifts in the ISDM stage is presented. The ADC employs an improved high-precision double-bootstrapped switch, and the synchronous clock is also double-bootstrapped to work under the low supply voltage. A modified merged capacitor switching (MCS) approach is presented to maintain a stable VCM at the differential input. The chip was fabricated using a 0.18 µm CMOS process, with a core area of 0.21 mm2. It consumed only 0.42 µW at a 0.6 V supply and a sampling rate of 10 kS/s, which achieved an effective number of bits (ENOB) of 11.03. The resulting figure of merit (FOMW) was 20.05 fJ/conversion-step, which is the lowest reported for ADCs of this architecture in a 0.18 µm process. Full article
(This article belongs to the Special Issue Analog/Mixed Signal Integrated Circuit Design)
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14 pages, 6309 KiB  
Article
A 64 dB-DR, 4.5 GHz-BW Logarithmic Amplifier for RSSI Measurement in 180 nm SiGe Process
by Yanhu Wang, Wei Ruan, Yuanjie Zhou, Mengchen Lu, Rui Teng and Jiapeng Li
Electronics 2025, 14(5), 958; https://doi.org/10.3390/electronics14050958 - 27 Feb 2025
Viewed by 486
Abstract
For RSSI measurement of RF systems, a wide band, large dynamic range (DR), parallel-summation logarithmic amplifier is presented in this paper. The circuit adopts an 8-stage DC-coupled cascaded limiting amplifier structure. The output voltage of the limiting amplifier is converted into current through [...] Read more.
For RSSI measurement of RF systems, a wide band, large dynamic range (DR), parallel-summation logarithmic amplifier is presented in this paper. The circuit adopts an 8-stage DC-coupled cascaded limiting amplifier structure. The output voltage of the limiting amplifier is converted into current through a rectifier to realize parallel summation. In order to reduce offset, this paper introduces offset reduction circuits in the gain and output stage, respectively. In addition, a log slope adjuster is proposed, which can achieve log slope control of different frequency inputs. The post-simulation results show that at a power supply voltage of 5 V, the 3 dB gain bandwidth is 4.5 GHz, the dynamic range reaches 64 dB, and the log error is less than ±1 dB. The overall circuit consumes 21 mA of current. Full article
(This article belongs to the Special Issue Analog/Mixed Signal Integrated Circuit Design)
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9 pages, 4517 KiB  
Article
Band Alignment of AlN/InGaZnO Heterojunction for Thin-Film Transistor Application
by Hongpeng Zhang, Tianli Huang, Rongjun Cao, Chen Wang, Bo Peng, Jibao Wu, Shaochong Wang, Kunwei Zheng, Renxu Jia, Yuming Zhang and Hongyi Zhang
Electronics 2024, 13(23), 4602; https://doi.org/10.3390/electronics13234602 - 22 Nov 2024
Viewed by 862
Abstract
Uncrystallized indium-gallium-zinc-oxide (InGaZnO) thin-film transistors (TFTs) combined with an aluminum nitride (AlN) dielectric have been used to promote performance and steadiness. However, the high deposition temperature of AlN films limits their application in InGaZnO flexible TFTs. In this work, AlN layers were deposited [...] Read more.
Uncrystallized indium-gallium-zinc-oxide (InGaZnO) thin-film transistors (TFTs) combined with an aluminum nitride (AlN) dielectric have been used to promote performance and steadiness. However, the high deposition temperature of AlN films limits their application in InGaZnO flexible TFTs. In this work, AlN layers were deposited via low-temperature plasma-enhanced atomic layer deposition (PEALD), and InGaZnO films were fabricated via high-power impulse magnetron sputtering (HIPIMS). The band alignment of the AlN/InGaZnO heterojunction was studied using the X-ray photoemission spectrum and ultraviolet visible transmittance spectrum. It was found that the AlN/InGaZnO system exhibited a staggered band alignment with a valence band offset ΔEv of −1.25 ± 0.05 eV and a conduction band offset ΔEc of 4.01 ± 0.05 eV. The results imply that PEALD AlN could be more useful for surface passivation than a gate dielectric to promote InGaZnO device reliability under atmospheric exposure. Full article
(This article belongs to the Special Issue Analog/Mixed Signal Integrated Circuit Design)
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