Search Results (367)

Recently, diamond-like carbon (DLC) films have been considered for enhancing the wear resistance of rubber because rubber exhibits a high coefficient of friction and is prone to wearing out. However, the significant difference in thermal expansion coefficients between DLC films and rubber often leads to high residual stresses and poor interfacial adhesion, which limits their application in dynamic seals. In this study, Cr-C/DLC composite films were prepared using magnetron sputtering, and the effects of varying Cr contents (0.8 at.%, 1.4 at.%, 4.3 at.%, and 7.0 at.%) on interfacial adhesion and tribological properties were investigated. Scanning electron microscopy (SEM) analysis revealed no distinct demarcation lines in the composite films, indicating strong adhesion to the substrate. X-ray photoelectron spectroscopy (XPS) analysis revealed that chromium doping promoted the conversion of sp³ bonds to sp² bonds. Adhesion and tribology tests revealed that introducing a Cr-C layer with higher Cr content within the range of 0.8 at.% to 7.0 at.% enhanced the film’s adhesion, reducing the CoF value of the composite film to 0.13–0.14. Specifically, the RF80 sample (4.3 at.% Cr) exhibited excellent interfacial adhesion and optimal tribological performance, with a CoF value reduced to 0.13 and wear rate of 3.1 × 10⁻⁴ mm³/(Nm). In summary, modulating the Cr doping content can significantly enhance the interfacial adhesion strength and tribological properties of Cr-C/DLC composite films on rubber surfaces, providing an effective solution for optimizing rubber seals. Full article

Boron coatings were deposited by RF magnetron sputtering in an Ar atmosphere at a constant power of 80 W, varying the working pressure in the 0.6–5 Pa range. Plasma diagnostics were performed by means of a Langmuir probe to determine the electron temperature and electron density under different operating conditions. Within the investigated pressure range, the deposition rate remained nearly constant, whereas a significant decrease in coating mass density was observed with increasing pressure. The coatings display a columnar structure at all investigated pressures, with no significant differences in bulk morphology. Pressure primarily affects the surface features, leading to an increase in the density, lateral dimensions, and height of surface agglomerates with increasing pressure. Compositional analysis by EDX revealed a substantial oxygen incorporation in the films, with the lowest oxygen content (~11 at.%) measured for the coating deposited at 0.6 Pa. XPS depth profiling confirmed the presence of oxygen and evidenced the formation of boron oxide species, while the boron concentration exceeded 80 at.% in all samples. These results highlight the strong sensitivity of boron film density and oxygen uptake to sputtering pressure. Full article

In this work, a study of the chemical composition of the compound Sb₂(S_1−xSe_x)₃ used in thin-film solar cell fabrication, based on correlating data obtained from XRD and XPS analyses, is presented. This approach enables us to propose a mathematical expression for evaluating stoichiometric variations in the material, showing how the variable x evolves as a function of the diffraction angle 2θ. To establish this model, we analyzed the most intense diffraction peak, corresponding to the (221) plane. To validate the proposed method, a series of Sb₂(S_1−xSe_x)₃ thin films with different compositions were synthesized using RF-magnetron sputtering followed by conventional heat treatments in a controlled-atmosphere reaction furnace. The XRD results reveal a systematic 2θ shift in the crystalline diffraction peaks toward the positions of the binary precursor phases—from Sb₂Se₃ to Sb₂S₃—caused by the increased sulfur content during synthesis. XPS measurements confirm the presence of Sb, Se, and S, and high-resolution spectra indicate a decrease in selenium content as the sulfur fraction increases. These results allowed us to elucidate the stoichiometric behavior of antimony sulfoselenide Sb₂(S_1−xSe_x)₃ using trend curves fitted to the characterization data. Full article

High-entropy alloy (HEA) multilayers represent a promising class of advanced coating materials due to their superior mechanical properties, corrosion resistance, and irradiation tolerance. However, the specific role of interface coherency on the creep behavior of HEA multilayers remains unclear. In this work, FCC/BCC Al-Cr-Fe-Ni HEA multilayers with different coherency were prepared by precisely controlling the modulated period (λ) via RF magnetron sputtering. Their room-temperature creep properties were systematically investigated through nanoindentation under different loading rates. The results reveal a strong dependence of creep resistance and deformation mechanisms on the interface coherency. HEA multilayers with semicoherent interfaces (λ = 16 nm) exhibit the highest creep resistance, where creep is primarily mediated by atomic diffusion or interface slip. In contrast, samples dominated by coherent interfaces or grain boundaries (λ = 8, 32, and 80 nm) demonstrate dislocation slip-dominated creep. This work elucidates how interfacial coherency dictates the transition between diffusion-mediated and dislocation-mediated creep mechanisms in HEA multilayers, providing critical insights for the design of next-generation creep-resistant nanostructured coatings. Full article

In this study, reactive radio frequency magnetron sputtering was used to deposit thin films. Gadolinium oxide was deposited on titanium nitride substrates at different deposition times and oxygen concentrations. Next, rapid thermal annealing and supercritical fluid treatment were performed. The three-dimensional profiler (alpha-step), X-ray diffractometer, and X-ray photoelectron spectroscopy were used to measure the thickness, surface morphology, crystal structure, and element analysis. Then, indium tin oxide was sputtered and deposited on the gadolinium oxide, which was covered with the metal mask to form a top electrode, thereby manufacturing a metal/insulator/metal resistive memory structure. Finally, a power meter was used to measure the characteristics of the resistive random access memory, including the current–voltage characteristics, and to explore the leakage current conduction mechanism and component durability. Full article

Ni thick films have a wide range of applications in mechanical areas for anti-corrosion, anti-friction and protection purposes, and are also extensively employed in the chip packaging field. Yet, the deposition of Ni thick films is still faced with many problems in deposition efficiency, dense structure and adhesion to the substrate. RF magnetron sputtering was employed to deposit on polished Ti substrate up to 10.8 µm thick Ni films at a high deposition rate (45 nm/min) in Ar atmosphere plus a small amount of H₂. Vacuum annealing was performed at 400 °C for 5 h. To characterize the adhesion via friction and scratch test, different loads were applied on both surfaces of as-sputtered and post-annealed Ni thick films, and results were comparatively analyzed. The films have high purity, compact structure, smooth surface and strong adhesion strength. Post-annealed samples showed better and stable adhesion of Ni thick films to the substrate surface. Full article

Background/Objectives: The use of zirconia implants is gaining traction as a potential alternative to titanium. Although having excellent properties, the zirconia surface has limited osteogenic potential. The purpose of this study was to produce, for the first time, mechanically stable, thick micron-scale hydroxyapatite coatings on zirconia implant material using radiofrequency (RF) magnetron sputtering. Methods: Zirconia samples were coated with HA using an RF magnetron sputtering device at a temperature of 125 °C for 20 h with 155 W of power. The procedure included rotating the substrate at a speed of 10 rpm while an argon gas flow was maintained continuously. Field emission scanning electron microscopy (FESEM), energy-dispersive X-ray (EDX) analysis, atomic force microscopy, and Vickers hardness measurements were used to evaluate the coat’s characteristics. Results: A smooth hydroxyapatite coating layer that was consistent and free of cracks was observed in all FESEM pictures. The EDX study revealed that the substrate surface contains HA particles, and the ratio of calcium (Ca) to phosphorus (P) was 16.58 to 11.31, which is very close to the ratio in original HA. FESEM cross-section pictures showed good adhesion between the coating and substrate without any gaps, and the coating thickness was 5 µm on average. A statistically significant difference was found in the roughness analysis between the samples of uncoated Zr and HA-coated Zr (p-value < 0.05). Conclusions: Zirconia implant material can be coated with a uniform layer of HA, displaying good adhesion and a thickness of a few micrometers when using magnetron sputtering for an extended period of time. Full article

Experimental and numerical investigations of the alternating current (AC) susceptibility, $\mathsf{\chi }\left(H\right) ~ \mathrm{d}M/\mathrm{d}H,$ examined multigrain La_0.66Sr_0.34MnO₃ (LSMO) thin films (thickness d = 250 nm) grown by radio-frequency (RF) magnetron sputtering on lattice-mismatched yttria-stabilized zirconia YSZ(001) substrates. The films exhibit a columnar structure comprising two types of grains, with (001)- and (011)-oriented planes of a pseudocubic lattice aligned parallel to the film surface. Field- and angle-dependent AC susceptibility measurements at 78 K reveal characteristic peak- and tip-like anomalies, attributed to contributions from grains with three distinct directions of easy magnetization axes within the film plane. Numerical modeling based on the transverse susceptibility theory for single-domain ferromagnetic grains, incorporating first- and second-order anisotropy constants, corroborates the experimental findings and elucidates the role of different grain types in magnetization switching and AC susceptibility response. This study provides a quantitative determination of the three in-plane easy magnetization axes in LSMO/YSZ(001) films and clarifies their influence on the magnetization dynamics of multigrain thin films. The demonstrated control over multigrain LSMO/YSZ(001) thin films with distinct in-plane easy magnetization axes and well-characterized AC susceptibility suggests potential applications in magnetic memory, spintronic devices, and precision magnetic sensing. Full article

In the presented research, aluminum-doped zinc oxide (AZO) thin films were synthesized on high-power transmission lines using the RF magnetron sputtering process. The impact of deposition power (160 W to 280 W) and deposition pressure (2 Pa to 5 Pa), on key characteristics like material composition, wettability, anti-icing behavior, and average crystal size were analyzed. The optimization of wettability and anti-icing performance was carried out using two-factor, four-level design of the Taguchi method to study the combined effects of multiple parameters rather than the effect of a single parameter. Considerable variation in the water contact angle, from 92.3° to 123.6°, has been observed, suggesting an enhancement in hydrophobic nature with optimized condition. Anti-icing tests demonstrated that the coated surface delayed ice accumulation by approximately 4.56 times compared to the uncoated surface. X-ray diffraction (XRD) analysis was carried out to confirm notable changes in the intensity of the (002) peak along the c-axis, directly correlating with grain size modification. The change in surface roughness was studied using AFM and the results were compared to establish a relationship between surface roughness and average grain size. Overall, the findings highlight the critical role of deposition parameters and their interactions in modifying the surface and structural properties of AZO thin films, which demonstrates their potential application for improving the anti-icing performance of transmission lines. Full article

To enhance the electrical performance of MgZnO-TFTs, this study employed radio-frequency (RF) magnetron sputtering to fabricate MgZnO/ZTO thin films. Using these films as the channel layer, bottom-gate top-contact MgZnO/ZTO-TFT devices were constructed. The thin films were characterized using atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). After optimization, the MgZnO/ZTO-TFT exhibited a high field-effect mobility of 16.80 cm²·V⁻¹·s⁻¹, high Ion/off of 7.63 × 10⁸, threshold voltage of −1.60 V, and subthreshold swing as low as 0.74 V·dec⁻¹. Bias stress stability tests were conducted under positive bias stress (PBS) and negative bias stress (NBS) conditions with a source-drain voltage of 20 V and gate bias stresses (VGS) of +10 V and −10 V, respectively, for a duration of 1000 s. The resulting threshold voltage shifts were only +0.58 V and −0.15 V, respectively, indicating excellent bias stability. These results suggest that the ZTO film, serving as the lower channel layer, effectively enhances carrier transport at the MgZnO/ZTO interface, thereby improving the field-effect mobility and on/off current ratio. Meanwhile, the MgZnO film as the upper channel layer adjusts the device’s threshold voltage and enhances its bias stability. Full article

An ultrathin Al layer was introduced into AZO/Cu/AZO films to further enhance the optoelectronic performance. The AZO/Al/Cu/AZO films were deposited on glass substrates by DC and RF magnetron sputtering; the microstructure and optoelectronic properties were analyzed by XRD, SEM, AFM, TEM, visible spectrophotometer, and Hall effect measurement system. The results indicated that the Al layer played a crucial role in modulating the crystallization behavior and optoelectronic properties of the films, exhibiting a distinct thickness-threshold effect. At an Al layer thickness of 1 nm, the film exhibited optimal optoelectronic performance, achieving a high F_OM of 0.71 Ω⁻¹, a high transmittance of 85%, and a low resistivity of 5.7 × 10⁻⁵ Ω·cm. However, when the Al layer thickness exceeded 1 nm, the crystallinity of the films deteriorated significantly, the grain boundary scattering and light absorption effect enhanced, leading to the deterioration of photoelectric properties. The introduction of the Al layer significantly improved the stability of the films, and the AZO/Al(2 nm)/Cu/AZO film exhibited the best temporal stability after being exposed to air for 20 months. Full article

This study explores how post-deposition thermal annealing alters the structural, morphological, and electronic properties of Sn–Te–O thin films grown by radio-frequency magnetron co-sputtering. Thin films were annealed at temperatures ranging from 298 K to 873 K and analyzed using a suite of techniques, including X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and atomic force microscopy (AFM). Annealing at 473 K resulted in increased surface roughness (R_q) in Te-rich films, while higher annealing temperatures promoted a chemical shift in tin oxidation states from Sn²⁺ to Sn⁴⁺. XRD patterns of films annealed at 473 K revealed the emergence of cubic-phase SnTe reflections not prominent in unannealed samples. Contact angle measurements indicated enhanced wettability in high-Te films after annealing, and work function analysis via Kelvin probe showed a trend of decreasing surface potential with lower Te content. These results provide insight into the thermal oxidation behavior and surface evolution of SnTe films, relevant for thermoelectric and topological applications. Full article

Ba_0.6Sr_0.4TiO₃ (BST) thin films were deposited on ITO substrates via rf magnetron sputtering, followed by structural and morphological characterization using XRD and FE-SEM. Metal–insulator–metal (MIM) RRAM devices were fabricated by depositing Al top electrodes, and their electrical properties were examined through I–V measurements. The optimized BST films deposited at 40% oxygen concentration exhibited stable resistive switching, with an operating voltage of 3 V, an on/off ratio of 1, and a leakage current of 10⁻⁸ A. After rapid thermal annealing at 500 °C, the on/off ratio improved to 2 but leakage increased to 10⁻³ A. Incorporating an electron transport layer (ETL) effectively suppressed the leakage current to 10⁻⁵ A while maintaining the on/off ratio at 2. Moreover, a transition from bipolar to unipolar switching was observed at higher oxygen concentration (60%). These results highlight the role of ETLs in reducing leakage and stabilizing switching characteristics, providing guidance for the development of transparent, low-power, and high-reliability BST-based RRAM devices. This study aims to investigate the role of Ba_0.6Sr_0.4TiO₃ (BST) ferroelectric oxide as a functional switching layer in resistive random-access memory (RRAM) and to evaluate how interface engineering using an electron transport layer (ETL) can improve resistive switching stability, leakage suppression, and device reliability. Full article

TiW thin films with superior surface properties were deposited at room temperature using RF magnetron sputtering under low-temperature process conditions. The correlation between bulk plasma characteristics and thin-film properties was investigated as a function of applied RF power (200–600 W) and process pressure (1–10 mTorr). Plasma potential and ion density were measured using a Langmuir probe, while deposition rate, surface roughness, sheet resistance, and crystallinity were evaluated. Increasing the applied RF power simultaneously increased plasma potential and ion density, enhancing ion bombardment energy at both the target and substrate, which improved sputtering efficiency and deposition rate. Under low-temperature deposition, thermal stress induced by differences in thermal expansion between the film and substrate was minimal. However, limited surface diffusion of adatoms caused incomplete coalescence of nucleation islands, adversely affecting film crystallinity. Refractory metals such as tungsten exhibit strong dependence of residual stress and microstructure on deposition conditions, highlighting the importance of plasma and process parameters on TiW film properties. When RF power was increased, the enhancement in deposition rate outweighed the effect of increased ion energy, leading to tensile stress from void formation dominating over compressive stress induced by high-energy ions. This also contributed to increased grain size and reduced sheet resistance. In contrast, variations in process pressure had minor effects on plasma characteristics, resulting in limited changes in the deposited film properties. Full article

This study investigates the influence of multilayer architecture on the mechanical, corrosion, and tribological properties of Ti/TiN coatings deposited on biomedical Ti-6Al-4V alloy. Nine multilayer configurations were prepared by DC/RF magnetron sputtering using metallic Ti and ceramic TiN targets, with a fixed TiN/Ti ratio of 3:1 and varying total numbers of layers (3, 5, and 7) and deposition times (30, 60, and 120 min). A strict application of the 10% indentation depth rule was implemented to eliminate substrate effects, which revealed significantly higher intrinsic hardness values (540–740 HV) and indentation moduli (124–143 GPa) compared to the substrate (353 HV; 114 GPa). In contrast, conventional higher-load testing underestimated coating performance due to substrate dominance. Among the investigated architectures, the Ti/TiN-7 configuration exhibited the best balance of properties, combining high hardness (~690 HV), modulus (~137 GPa), improved corrosion resistance (Ecorr up to −0.13 V, Icorr reduced by an order of magnitude), and stable abrasive wear behavior. These findings demonstrate that both bilayer number and deposition time critically determine the mechanical and functional response of Ti/TiN multilayers. The results provide practical guidelines for the reliable characterization and design of multilayer coatings for biomedical and aerospace applications. Full article