Search Results (372)

Integration of lead zirconate titanate (PZT) films on metallic substrates is important for flexible piezoelectric devices, but achieving highly textured crystallinity without detrimental interfacial diffusion or oxidation remains challenging. In this work, PZT thick films (~1.3 μm) were deposited on titanium substrates using radio-frequency magnetron sputtering at 400 °C followed by rapid thermal processing at 640 °C for 2.5 min. A conductive LaNiO₃ buffer layer was introduced to promote the nucleation of the perovskite phase and suppress interfacial degradation. The resulting PZT films on the LNO/Pt/Ti substrates exhibit a strong (001) preferred orientation and a dense microstructure. The films show a large remnant polarization P_r of ~61 μC cm⁻² and a low coercive field E_c of ~56 kV cm⁻¹ at 60 V, together with a dielectric constant ε_r of ~1350–1612 and a dielectric loss tanδ ≤ 0.06 in the frequency range of 1 kHz to 1 MHz. Patterned Pt/PZT/LNO/Pt/Ti cantilevers yield a transverse piezoelectric coefficient e_31,f of ~−6.7 C/m², significantly outperforming reported piezoelectric films deposited on Ti. These results demonstrate that controlled nucleation and rapid thermal crystallization enable highly textured PZT films on reactive metallic substrates, providing a viable route for flexible piezoelectric MEMS devices. Full article

This review presents a comprehensive and thorough evaluation of recent developments in physical vapour deposition (PVD) radiofrequency (RF)-sputtered β-Ga₂O₃ thin-film-based solar-blind ultraviolet (UV) photodetectors (SB-UVPDs), emphasizing their potential for next-generation optoelectronic applications. The review highlights different photodetector architectures, the performance characteristics of SB-UVPDs, and an overview of the attributes of β-Ga₂O₃ that make it a promising wide-bandgap semiconductor for next-generation devices. Additionally, the working principle of the PVD RF magnetron sputtering technique is discussed briefly, with a particular focus on the influence of deposition parameters, including sputtering power, gas pressure, deposition time, target-to-substrate distance, and substrate temperature, on the resulting film’s crystallinity and morphology and the optical quality of SB-UVPDs. Moreover, the impact of post-deposition treatments, such as post-annealing and elemental doping, is also discussed here for SB-UVPDs. And finally, the electrical performance characteristics of SB-UVPDs are discussed categorically based on deposition parameters. Overall, this review establishes that PVD RF magnetron sputtering is a highly versatile and controllable technique for fabricating high-quality β-Ga₂O₃ thin film-based SB-UVPDs. By carefully optimizing deposition and post-processing parameters, the optoelectronic performance of β-Ga₂O₃-based SB-UVPDs can be effectively tuned, enabling their integration into next-generation high-performance optoelectronic and photonic systems. Full article

To clarify the instability behavior of the columnar microstructure in RF magnetron sputtered TiN coatings under compressive loading, experimental characterization and finite element simulation were combined to investigate the microstructural features, mechanical properties, and linear and nonlinear buckling responses of the coating. TiN coatings were deposited on cemented carbide and Si substrates by RF magnetron sputtering using a 99.9% purity TiN target. The surface and cross-sectional morphologies were characterized by field-emission scanning electron microscopy, and the nanohardness and Young’s modulus were determined by nanoindentation. Based on the experimentally observed morphology and measured mechanical properties, a finite element model of the columnar structure was established in ABAQUS, and the instability responses predicted by solid, shell, and beam element models were comparatively analyzed. The results showed that the as-deposited TiN coating exhibited a dense and uniform surface and a distinct columnar microstructure in cross-section. Linear buckling analysis indicated that the first-order critical buckling loads predicted by different element models were different, among which the solid element model gave a value of 3.43 × 10⁻⁵ N, showing the closest agreement with the theoretical result. Furthermore, nonlinear buckling analysis was performed by introducing an initial geometric imperfection of 4 × 10⁻³ mm based on the first-order buckling mode of the solid element model. The results showed that the columnar structure became unstable at a load of 0.74 × 10⁻⁶ N, accompanied by irreversible deformation. These findings demonstrate that linking experimentally observed TiN columnar microstructures with microstructure-informed instability analysis provides a useful perspective for understanding the local instability behavior and potential failure tendency of sputtered coatings and offers theoretical support for the structural design and reliability evaluation of protective coatings for cutting tools. Full article

X-band copper resonating cavities are key components of future pulsed GHz normal-conductive multi-TeV accelerators. High electric field gradients are required for emerging applications; however, as gradients increase, components’ lifetime decreases, primarily due to radiofrequency (RF) breakdown. Coating technologies are being investigated in several laboratories to improve RF structure, performance and lifetime. To this end, we investigated the feasibility of fabricating nanometer-periodic Cu/Mo metallic multilayers on three-dimensional (3D) aluminum mandrels designed to replicate X-band copper resonating cavities. These nanometer-period multilayers are proposed to mitigate surface degradation due to electric breakdown at high accelerating gradients by stabilizing inner cavity surfaces against dislocation evolution and roughening caused by thermo-mechanical fatigue. High-Power Impulse Magnetron Sputtering (HiPIMS) in a bias-controlled dual closed-field magnetron configuration was employed to deposit alternating Mo and Cu nano-layers onto the 3D geometries. Given the complexity of HiPIMS technology, plasma pulse evolution was studied by combining time-resolved optical emission spectroscopy with electrical measurements of the pulse discharge. The influence of the process parameters, particularly the applied DC bias, on film growth was studied using non-destructive microprobe α-particle elastic backscattering spectrometry (µEBS) and scanning transmission electron microscopy (STEM). STEM and µEBS analyses confirmed that Mo layers with thicknesses of approximately 5–35 nm were successfully deposited repeatedly on thicker Cu layers (30–150 nm), preserving individual layer properties with minimal interdiffusion and alloying. The layers were deposited inside trenches with an aspect ratio of 5:1 representative of X-band irises. This technology, coupled with the replica process, could be applied to highly engineered nanostructured coatings for X-band cavity treatment in compact particle accelerator prototypes, as it may improve electrical breakdown lifetime under high accelerating fields, at least for degradation processes driven by the high mobility of copper dislocations. Full article

Lead zirconate titanate (PZT) is a widely used material for applications in microsensors, actuators, and transducers. Due to its high piezoelectric coefficient, large dielectric constant, and strong polarization capability near the morphotropic phase boundary (Zr/Ti ≈ 52/48), it is considered one of the most attractive materials for micro-electromechanical systems (MEMS). These advantageous material properties strongly depend on the PZT layer’s microstructure and crystallinity, which are primarily determined by the choice of seed layer, deposition conditions, and the post-deposition annealing treatment that promotes the formation of the PZT’s perovskite phase. In this contribution, sputter-deposited PZT thin films were crystallized by conventional furnace annealing (CFA) to evaluate the effect of heating/cooling rates (1 °C·min⁻¹–7 °C·min⁻¹) within a temperature range of 450 °C to 700 °C on structural, electrical, and ferroelectric properties, with consideration of the seed layer preparation. We characterized the materials’ properties by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and measurements of the ferroelectric hysteresis, capacitance, and leakage current. All samples annealed at temperatures of at least 500 °C fully crystallized into the perovskite phase, independently of the heating/cooling rate. The best ferroelectric performance was achieved at 550 °C with a 1 °C·min⁻¹ heating/cooling rate, yielding a saturation polarization of 82.8 µC·cm⁻² and a remnant polarization of 36.9 µC·cm⁻² under a maximum applied field of 300 kV·cm⁻¹. Full article

Recently, diamond-like carbon (DLC) films have been considered for enhancing the wear resistance of rubber because rubber exhibits a high coefficient of friction and is prone to wearing out. However, the significant difference in thermal expansion coefficients between DLC films and rubber often leads to high residual stresses and poor interfacial adhesion, which limits their application in dynamic seals. In this study, Cr-C/DLC composite films were prepared using magnetron sputtering, and the effects of varying Cr contents (0.8 at.%, 1.4 at.%, 4.3 at.%, and 7.0 at.%) on interfacial adhesion and tribological properties were investigated. Scanning electron microscopy (SEM) analysis revealed no distinct demarcation lines in the composite films, indicating strong adhesion to the substrate. X-ray photoelectron spectroscopy (XPS) analysis revealed that chromium doping promoted the conversion of sp³ bonds to sp² bonds. Adhesion and tribology tests revealed that introducing a Cr-C layer with higher Cr content within the range of 0.8 at.% to 7.0 at.% enhanced the film’s adhesion, reducing the CoF value of the composite film to 0.13–0.14. Specifically, the RF80 sample (4.3 at.% Cr) exhibited excellent interfacial adhesion and optimal tribological performance, with a CoF value reduced to 0.13 and wear rate of 3.1 × 10⁻⁴ mm³/(Nm). In summary, modulating the Cr doping content can significantly enhance the interfacial adhesion strength and tribological properties of Cr-C/DLC composite films on rubber surfaces, providing an effective solution for optimizing rubber seals. Full article

Boron coatings were deposited by RF magnetron sputtering in an Ar atmosphere at a constant power of 80 W, varying the working pressure in the 0.6–5 Pa range. Plasma diagnostics were performed by means of a Langmuir probe to determine the electron temperature and electron density under different operating conditions. Within the investigated pressure range, the deposition rate remained nearly constant, whereas a significant decrease in coating mass density was observed with increasing pressure. The coatings display a columnar structure at all investigated pressures, with no significant differences in bulk morphology. Pressure primarily affects the surface features, leading to an increase in the density, lateral dimensions, and height of surface agglomerates with increasing pressure. Compositional analysis by EDX revealed a substantial oxygen incorporation in the films, with the lowest oxygen content (~11 at.%) measured for the coating deposited at 0.6 Pa. XPS depth profiling confirmed the presence of oxygen and evidenced the formation of boron oxide species, while the boron concentration exceeded 80 at.% in all samples. These results highlight the strong sensitivity of boron film density and oxygen uptake to sputtering pressure. Full article

In this work, a study of the chemical composition of the compound Sb₂(S_1−xSe_x)₃ used in thin-film solar cell fabrication, based on correlating data obtained from XRD and XPS analyses, is presented. This approach enables us to propose a mathematical expression for evaluating stoichiometric variations in the material, showing how the variable x evolves as a function of the diffraction angle 2θ. To establish this model, we analyzed the most intense diffraction peak, corresponding to the (221) plane. To validate the proposed method, a series of Sb₂(S_1−xSe_x)₃ thin films with different compositions were synthesized using RF-magnetron sputtering followed by conventional heat treatments in a controlled-atmosphere reaction furnace. The XRD results reveal a systematic 2θ shift in the crystalline diffraction peaks toward the positions of the binary precursor phases—from Sb₂Se₃ to Sb₂S₃—caused by the increased sulfur content during synthesis. XPS measurements confirm the presence of Sb, Se, and S, and high-resolution spectra indicate a decrease in selenium content as the sulfur fraction increases. These results allowed us to elucidate the stoichiometric behavior of antimony sulfoselenide Sb₂(S_1−xSe_x)₃ using trend curves fitted to the characterization data. Full article

High-entropy alloy (HEA) multilayers represent a promising class of advanced coating materials due to their superior mechanical properties, corrosion resistance, and irradiation tolerance. However, the specific role of interface coherency on the creep behavior of HEA multilayers remains unclear. In this work, FCC/BCC Al-Cr-Fe-Ni HEA multilayers with different coherency were prepared by precisely controlling the modulated period (λ) via RF magnetron sputtering. Their room-temperature creep properties were systematically investigated through nanoindentation under different loading rates. The results reveal a strong dependence of creep resistance and deformation mechanisms on the interface coherency. HEA multilayers with semicoherent interfaces (λ = 16 nm) exhibit the highest creep resistance, where creep is primarily mediated by atomic diffusion or interface slip. In contrast, samples dominated by coherent interfaces or grain boundaries (λ = 8, 32, and 80 nm) demonstrate dislocation slip-dominated creep. This work elucidates how interfacial coherency dictates the transition between diffusion-mediated and dislocation-mediated creep mechanisms in HEA multilayers, providing critical insights for the design of next-generation creep-resistant nanostructured coatings. Full article

In this study, reactive radio frequency magnetron sputtering was used to deposit thin films. Gadolinium oxide was deposited on titanium nitride substrates at different deposition times and oxygen concentrations. Next, rapid thermal annealing and supercritical fluid treatment were performed. The three-dimensional profiler (alpha-step), X-ray diffractometer, and X-ray photoelectron spectroscopy were used to measure the thickness, surface morphology, crystal structure, and element analysis. Then, indium tin oxide was sputtered and deposited on the gadolinium oxide, which was covered with the metal mask to form a top electrode, thereby manufacturing a metal/insulator/metal resistive memory structure. Finally, a power meter was used to measure the characteristics of the resistive random access memory, including the current–voltage characteristics, and to explore the leakage current conduction mechanism and component durability. Full article

Ni thick films have a wide range of applications in mechanical areas for anti-corrosion, anti-friction and protection purposes, and are also extensively employed in the chip packaging field. Yet, the deposition of Ni thick films is still faced with many problems in deposition efficiency, dense structure and adhesion to the substrate. RF magnetron sputtering was employed to deposit on polished Ti substrate up to 10.8 µm thick Ni films at a high deposition rate (45 nm/min) in Ar atmosphere plus a small amount of H₂. Vacuum annealing was performed at 400 °C for 5 h. To characterize the adhesion via friction and scratch test, different loads were applied on both surfaces of as-sputtered and post-annealed Ni thick films, and results were comparatively analyzed. The films have high purity, compact structure, smooth surface and strong adhesion strength. Post-annealed samples showed better and stable adhesion of Ni thick films to the substrate surface. Full article

Background/Objectives: The use of zirconia implants is gaining traction as a potential alternative to titanium. Although having excellent properties, the zirconia surface has limited osteogenic potential. The purpose of this study was to produce, for the first time, mechanically stable, thick micron-scale hydroxyapatite coatings on zirconia implant material using radiofrequency (RF) magnetron sputtering. Methods: Zirconia samples were coated with HA using an RF magnetron sputtering device at a temperature of 125 °C for 20 h with 155 W of power. The procedure included rotating the substrate at a speed of 10 rpm while an argon gas flow was maintained continuously. Field emission scanning electron microscopy (FESEM), energy-dispersive X-ray (EDX) analysis, atomic force microscopy, and Vickers hardness measurements were used to evaluate the coat’s characteristics. Results: A smooth hydroxyapatite coating layer that was consistent and free of cracks was observed in all FESEM pictures. The EDX study revealed that the substrate surface contains HA particles, and the ratio of calcium (Ca) to phosphorus (P) was 16.58 to 11.31, which is very close to the ratio in original HA. FESEM cross-section pictures showed good adhesion between the coating and substrate without any gaps, and the coating thickness was 5 µm on average. A statistically significant difference was found in the roughness analysis between the samples of uncoated Zr and HA-coated Zr (p-value < 0.05). Conclusions: Zirconia implant material can be coated with a uniform layer of HA, displaying good adhesion and a thickness of a few micrometers when using magnetron sputtering for an extended period of time. Full article

Experimental and numerical investigations of the alternating current (AC) susceptibility, $\mathsf{\chi }\left(H\right) ~ \mathrm{d}M/\mathrm{d}H,$ examined multigrain La_0.66Sr_0.34MnO₃ (LSMO) thin films (thickness d = 250 nm) grown by radio-frequency (RF) magnetron sputtering on lattice-mismatched yttria-stabilized zirconia YSZ(001) substrates. The films exhibit a columnar structure comprising two types of grains, with (001)- and (011)-oriented planes of a pseudocubic lattice aligned parallel to the film surface. Field- and angle-dependent AC susceptibility measurements at 78 K reveal characteristic peak- and tip-like anomalies, attributed to contributions from grains with three distinct directions of easy magnetization axes within the film plane. Numerical modeling based on the transverse susceptibility theory for single-domain ferromagnetic grains, incorporating first- and second-order anisotropy constants, corroborates the experimental findings and elucidates the role of different grain types in magnetization switching and AC susceptibility response. This study provides a quantitative determination of the three in-plane easy magnetization axes in LSMO/YSZ(001) films and clarifies their influence on the magnetization dynamics of multigrain thin films. The demonstrated control over multigrain LSMO/YSZ(001) thin films with distinct in-plane easy magnetization axes and well-characterized AC susceptibility suggests potential applications in magnetic memory, spintronic devices, and precision magnetic sensing. Full article

In the presented research, aluminum-doped zinc oxide (AZO) thin films were synthesized on high-power transmission lines using the RF magnetron sputtering process. The impact of deposition power (160 W to 280 W) and deposition pressure (2 Pa to 5 Pa), on key characteristics like material composition, wettability, anti-icing behavior, and average crystal size were analyzed. The optimization of wettability and anti-icing performance was carried out using two-factor, four-level design of the Taguchi method to study the combined effects of multiple parameters rather than the effect of a single parameter. Considerable variation in the water contact angle, from 92.3° to 123.6°, has been observed, suggesting an enhancement in hydrophobic nature with optimized condition. Anti-icing tests demonstrated that the coated surface delayed ice accumulation by approximately 4.56 times compared to the uncoated surface. X-ray diffraction (XRD) analysis was carried out to confirm notable changes in the intensity of the (002) peak along the c-axis, directly correlating with grain size modification. The change in surface roughness was studied using AFM and the results were compared to establish a relationship between surface roughness and average grain size. Overall, the findings highlight the critical role of deposition parameters and their interactions in modifying the surface and structural properties of AZO thin films, which demonstrates their potential application for improving the anti-icing performance of transmission lines. Full article

To enhance the electrical performance of MgZnO-TFTs, this study employed radio-frequency (RF) magnetron sputtering to fabricate MgZnO/ZTO thin films. Using these films as the channel layer, bottom-gate top-contact MgZnO/ZTO-TFT devices were constructed. The thin films were characterized using atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). After optimization, the MgZnO/ZTO-TFT exhibited a high field-effect mobility of 16.80 cm²·V⁻¹·s⁻¹, high Ion/off of 7.63 × 10⁸, threshold voltage of −1.60 V, and subthreshold swing as low as 0.74 V·dec⁻¹. Bias stress stability tests were conducted under positive bias stress (PBS) and negative bias stress (NBS) conditions with a source-drain voltage of 20 V and gate bias stresses (VGS) of +10 V and −10 V, respectively, for a duration of 1000 s. The resulting threshold voltage shifts were only +0.58 V and −0.15 V, respectively, indicating excellent bias stability. These results suggest that the ZTO film, serving as the lower channel layer, effectively enhances carrier transport at the MgZnO/ZTO interface, thereby improving the field-effect mobility and on/off current ratio. Meanwhile, the MgZnO film as the upper channel layer adjusts the device’s threshold voltage and enhances its bias stability. Full article