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Microstructure and Optoelectronic Properties of WZO/Al/Cu/Al/WZO Multilayer Films
 
 
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Nanomaterials
Volume 15
Issue 23
10.3390/nano15231780
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This is an early access version, the complete PDF, HTML, and XML versions will be available soon.
Article

Improved Optoelectronic Properties and Temporal Stability of AZO/Cu/AZO Films by Inserting an Ultrathin Al Layer

by
Haijuan Mei
1,
Rui Wang
2,
Jianming Deng
1,*,
Yi Yu
1,
Yimeng Song
1,
Zhenting Zhao
1,
Junfeng Zhao
1,
Qiuguo Li
1,
Zhaohui Guo
1,
Cihong Lin
3 and
Weiping Gong
1,*
1
Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516007, China
2
Guangxi Key Laboratory of Special Engineering Equipment and Control, Guilin University of Aerospace Technology, Guilin 541004, China
3
Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518000, China
*
Authors to whom correspondence should be addressed.
Nanomaterials 2025, 15(23), 1780; https://doi.org/10.3390/nano15231780
Submission received: 29 October 2025 / Revised: 18 November 2025 / Accepted: 25 November 2025 / Published: 26 November 2025
(This article belongs to the Special Issue Nanostructured Materials and Thin Films for Advanced Engineering Applications and Green Sustainable Solutions)
Versions Notes

Abstract

An ultrathin Al layer was introduced into AZO/Cu/AZO films to further enhance the optoelectronic performance. The AZO/Al/Cu/AZO films were deposited on glass substrates by DC and RF magnetron sputtering; the microstructure and optoelectronic properties were analyzed by XRD, SEM, AFM, TEM, visible spectrophotometer, and Hall effect measurement system. The results indicated that the Al layer played a crucial role in modulating the crystallization behavior and optoelectronic properties of the films, exhibiting a distinct thickness-threshold effect. At an Al layer thickness of 1 nm, the film exhibited optimal optoelectronic performance, achieving a high FOM of 0.71 Ω−1, a high transmittance of 85%, and a low resistivity of 5.7 × 10−5 Ω·cm. However, when the Al layer thickness exceeded 1 nm, the crystallinity of the films deteriorated significantly, the grain boundary scattering and light absorption effect enhanced, leading to the deterioration of photoelectric properties. The introduction of the Al layer significantly improved the stability of the films, and the AZO/Al(2 nm)/Cu/AZO film exhibited the best temporal stability after being exposed to air for 20 months.
Keywords: AZO/Al/Cu/AZO; microstructure; optoelectronic properties; temporal stability AZO/Al/Cu/AZO; microstructure; optoelectronic properties; temporal stability

Share and Cite

MDPI and ACS Style

Mei, H.; Wang, R.; Deng, J.; Yu, Y.; Song, Y.; Zhao, Z.; Zhao, J.; Li, Q.; Guo, Z.; Lin, C.; et al. Improved Optoelectronic Properties and Temporal Stability of AZO/Cu/AZO Films by Inserting an Ultrathin Al Layer. Nanomaterials 2025, 15, 1780. https://doi.org/10.3390/nano15231780

AMA Style

Mei H, Wang R, Deng J, Yu Y, Song Y, Zhao Z, Zhao J, Li Q, Guo Z, Lin C, et al. Improved Optoelectronic Properties and Temporal Stability of AZO/Cu/AZO Films by Inserting an Ultrathin Al Layer. Nanomaterials. 2025; 15(23):1780. https://doi.org/10.3390/nano15231780

Chicago/Turabian Style

Mei, Haijuan, Rui Wang, Jianming Deng, Yi Yu, Yimeng Song, Zhenting Zhao, Junfeng Zhao, Qiuguo Li, Zhaohui Guo, Cihong Lin, and et al. 2025. "Improved Optoelectronic Properties and Temporal Stability of AZO/Cu/AZO Films by Inserting an Ultrathin Al Layer" Nanomaterials 15, no. 23: 1780. https://doi.org/10.3390/nano15231780

APA Style

Mei, H., Wang, R., Deng, J., Yu, Y., Song, Y., Zhao, Z., Zhao, J., Li, Q., Guo, Z., Lin, C., & Gong, W. (2025). Improved Optoelectronic Properties and Temporal Stability of AZO/Cu/AZO Films by Inserting an Ultrathin Al Layer. Nanomaterials, 15(23), 1780. https://doi.org/10.3390/nano15231780

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