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Keywords = resistive gas sensors

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16 pages, 2105 KB  
Article
Synthesis of CSA-Capped Poly (Aniline-Co-Aniline-2-Sulfonic Acid) Spherical Nanoparticles for Gas Sensor Applications
by Ki-Hyun Pyo, Ji-Sun Kim, Yoon Hee Jang and Jin-Yeol Kim
Chemosensors 2025, 13(10), 364; https://doi.org/10.3390/chemosensors13100364 - 4 Oct 2025
Viewed by 178
Abstract
We synthesized emeraldine salts of poly(aniline-co-aniline-2-sulfonic acid) capped with camphorsulfonic acid (CSA), forming spherical nanoparticles (NPs), i.e., CSA-capped P(ANi-co-ASNi), and demonstrated their efficacy as gas sensor elements. The synthesized core–shell spherical NPs, averaging 265 nm in diameter, feature a CSA shell with a [...] Read more.
We synthesized emeraldine salts of poly(aniline-co-aniline-2-sulfonic acid) capped with camphorsulfonic acid (CSA), forming spherical nanoparticles (NPs), i.e., CSA-capped P(ANi-co-ASNi), and demonstrated their efficacy as gas sensor elements. The synthesized core–shell spherical NPs, averaging 265 nm in diameter, feature a CSA shell with a porous thin-film morphology, characterized by the uneven distribution of fine particulate domains across the outer surface of the positively charged P(ANi-co-ASNi) cores. This uniquely heterogeneous shell architecture facilitates stable charge transport at the core–shell interface, enhances resistance to ambient humidity, and promotes efficient interaction with organic gas molecules. The CSA-capped P(ANi-co-ASNi) sensors reliably detected low concentrations of acetone (1–5 ppm) and water vapor (1–28% RH) under ambient conditions. Furthermore, the sensors exhibited superior stability across varying temperature, humidity, and cyclic performance, outperforming conventional pure PANiNi. Full article
(This article belongs to the Special Issue Functional Nanomaterial-Based Gas Sensors and Humidity Sensors)
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22 pages, 3094 KB  
Article
Enhanced NO2 Detection in ZnO-Based FET Sensor: Charge Carrier Confinement in a Quantum Well for Superior Sensitivity and Selectivity
by Hicham Helal, Marwa Ben Arbia, Hakimeh Pakdel, Dario Zappa, Zineb Benamara and Elisabetta Comini
Chemosensors 2025, 13(10), 358; https://doi.org/10.3390/chemosensors13100358 - 1 Oct 2025
Viewed by 309
Abstract
NO2 is a toxic gas mainly generated by combustion processes, such as vehicle emissions and industrial activities. It is a key contributor to smog, acid rain, ground-level ozone, and particulate matter, all of which pose serious risks to human health and the [...] Read more.
NO2 is a toxic gas mainly generated by combustion processes, such as vehicle emissions and industrial activities. It is a key contributor to smog, acid rain, ground-level ozone, and particulate matter, all of which pose serious risks to human health and the environment. Conventional resistive gas sensors, typically based on metal oxide semiconductors, detect NO2 by resistance modulation through surface interactions with the gas. However, they often suffer from low responsiveness and poor selectivity. This study investigates NO2 detection using nanoporous zinc oxide thin films integrated into a resistor structure and floating-gate field-effect transistor (FGFET). Both Silvaco-Atlas simulations and experimental fabrication were employed to evaluate sensor behavior under NO2 exposure. The results show that FGFET provides higher sensitivity, faster response times, and improved selectivity compared to resistor-based devices. In particular, FGFET achieves a detection limit as low as 89 ppb, with optimal performance around 400 °C, and maintains stability under varying humidity levels. The enhanced performance arises from quantum well effects at the floating-gate Schottky contact, combined with NO2 adsorption on the ZnO surface. These interactions extend the depletion region and confine charge carriers, amplifying conductivity modulation in the channel. Overall, the findings demonstrate that FGFET is a promising platform for NO2 sensors, with strong potential for environmental monitoring and industrial safety applications. Full article
(This article belongs to the Special Issue Functionalized Material-Based Gas Sensing)
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31 pages, 1560 KB  
Review
Overcoming Immune Therapy Resistance in Cancer Through Innate Immune Reprogramming
by Giada Mandracci, Nardine Soliman and Nadia El Khawanky
Int. J. Mol. Sci. 2025, 26(19), 9554; https://doi.org/10.3390/ijms26199554 - 30 Sep 2025
Viewed by 579
Abstract
Overcoming immune resistance remains the critical barrier to durable immunotherapy responses. Tumors with non-inflamed, “cold” microenvironments exclude cytotoxic lymphocytes and evade checkpoint blockade. Innate nucleic acid-sensing pathways—including TLRs, RIG-I-like RNA sensors, and the cGAS–STING DNA-sensing axis—can recondition this hostile landscape by licensing dendritic [...] Read more.
Overcoming immune resistance remains the critical barrier to durable immunotherapy responses. Tumors with non-inflamed, “cold” microenvironments exclude cytotoxic lymphocytes and evade checkpoint blockade. Innate nucleic acid-sensing pathways—including TLRs, RIG-I-like RNA sensors, and the cGAS–STING DNA-sensing axis—can recondition this hostile landscape by licensing dendritic cells, restoring antigen presentation, and recruiting effector T and NK cells. In this review, we synthesize mechanistic insights into how these receptors function across tumor and immune compartments and evaluate recent translational advances spanning small-molecule and nucleic acid agonists, engineered delivery systems, and clinical trials. We highlight challenges that have limited clinical impact, including pathway silencing, systemic toxicity, and lack of predictive biomarkers, while emphasizing emerging solutions such as tumor-intrinsic targeting, CAR-T/NK engineering, and biomarker-guided patient selection. By integrating innate activation into rational combination regimens, innate immune reprogramming offers a blueprint to convert resistant disease into one susceptible to durable immune control. Full article
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15 pages, 2035 KB  
Article
Real-Time Technique for Semiconductor Material Parameter Measurement Under Continuous Neutron Irradiation with High Integral Fluence
by Ivan S. Vasil’evskii, Aleksey N. Klochkov, Pavel V. Nekrasov, Aleksander N. Vinichenko, Nikolay I. Kargin, Almas Yskakov, Maksim V. Bulavin, Aleksey V. Galushko, Askhat Bekbayev, Bagdaulet Mukhametuly, Elmira Myrzabekova, Nurdaulet Shegebayev, Dana Kulikbayeva, Rassim Nurulin, Aru Nurkasova and Ruslan Baitugulov
Electronics 2025, 14(19), 3802; https://doi.org/10.3390/electronics14193802 - 25 Sep 2025
Viewed by 282
Abstract
The degradation of the electronic properties of semiconductor materials and electronic devices under neutron irradiation is a critical issue for the development of electronic systems intended for use in nuclear and thermonuclear energy facilities. This study presents a methodology for real-time measurement of [...] Read more.
The degradation of the electronic properties of semiconductor materials and electronic devices under neutron irradiation is a critical issue for the development of electronic systems intended for use in nuclear and thermonuclear energy facilities. This study presents a methodology for real-time measurement of the electrical parameters of semiconductor structures during neutron irradiation in a high-flux reactor environment. A specially designed irradiation fixture with an electrical measurement system was developed and implemented at the WWR-K research reactor. The system enables simultaneous measurement of electrical conductivity and the Hall effect, with automatic temperature control and remote data acquisition. The sealed fixture, equipped with radiation-resistant wiring and a temperature control, allows for continuous measurement of remote material properties at neutron fluences exceeding 1018 cm−2, eliminating the limitations associated with post-irradiation handling of radioactive samples. The technique was successfully applied to the two different InGaAs-based heterostructures, revealing distinct mechanisms of radiation-induced modification: degradation of mobility and carrier concentration in the InGaAs quantum well structure on GaAs substrate, and transmutation-induced doping effects in the heterostructure on InP substrate. The developed methodology provides a reliable platform for evaluating radiation resistance and optimizing materials for magnetic sensors and electronic components designed for high-radiation environments. Full article
(This article belongs to the Special Issue Radiation Effects on Advanced Electronic Devices and Circuits)
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17 pages, 2234 KB  
Review
Gallium Oxide Memristors: A Review of Resistive Switching Devices and Emerging Applications
by Alfred Moore, Yaonan Hou and Lijie Li
Nanomaterials 2025, 15(17), 1365; https://doi.org/10.3390/nano15171365 - 4 Sep 2025
Viewed by 1043
Abstract
Gallium oxide (Ga2O3)-based memristors are gaining traction as promising candidates for next-generation electronic devices toward in-memory computing, leveraging the unique properties of Ga2O3, such as its wide bandgap, high thermodynamic stability, and chemical stability. This [...] Read more.
Gallium oxide (Ga2O3)-based memristors are gaining traction as promising candidates for next-generation electronic devices toward in-memory computing, leveraging the unique properties of Ga2O3, such as its wide bandgap, high thermodynamic stability, and chemical stability. This review explores the evolution of memristor theory for Ga2O3-based materials, emphasising capacitive memristors and their ability to integrate resistive and capacitive switching mechanisms for multifunctional performance. We discussed the state-of-the-art fabrication methods, material engineering strategies, and the current challenges of Ga2O3-based memristors. The review also highlights the applications of these memristors in memory technologies, neuromorphic computing, and sensors, showcasing their potential to revolutionise emerging electronics. Special focus has been placed on the use of Ga2O3 in capacitive memristors, where their properties enable improved switching speed, endurance, and stability. In this paper we provide a comprehensive overview of the advancements in Ga2O3-based memristors and outline pathways for future research in this rapidly evolving field. Full article
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21 pages, 11834 KB  
Article
Influence of the Ozonation Process on Expanded Graphite for Textile Gas Sensors
by Paulina Rzeźniczak, Ewa Skrzetuska, Mohanapriya Venkataraman and Jakub Wiener
Sensors 2025, 25(17), 5328; https://doi.org/10.3390/s25175328 - 27 Aug 2025
Viewed by 595
Abstract
In view of the growing demand for flexible, conductive and functional materials for textile gas sensor applications, the effects of ozonation on the properties of expanded graphite (EG) in textile structures were analyzed. Four types of fabrics (cotton, polyamide, viscose, para-aramid) coated with [...] Read more.
In view of the growing demand for flexible, conductive and functional materials for textile gas sensor applications, the effects of ozonation on the properties of expanded graphite (EG) in textile structures were analyzed. Four types of fabrics (cotton, polyamide, viscose, para-aramid) coated with pastes containing EG, which had previously been subjected to a 15-min and 30-min ozonation process, were examined. The paste was prepared using Ebecryl 2002 and the photoinitiator Esacure DP250 and then applied by screen printing. Surface resistance, scanning microscopy and wetting angle analyses were performed. The results showed that short-term ozonation (15 min) notably improved the electrical conductivity and adhesion of EG to the textile substrate, while longer exposure (30 min) led to deterioration of the conductive properties due to excessive functionalization and fragmentation of the conductive layer. The lowest surface resistance was observed in the sample subjected to 15 min of ozonation. The conclusions indicate that a properly controlled ozonation process can increase the usability of EG in sensor applications, especially in the context of smart clothing; however, the optimization of the modification time is crucial for maintaining the integrity and durability of the conductive layer. Full article
(This article belongs to the Special Issue Feature Papers in Physical Sensors 2025)
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17 pages, 8243 KB  
Article
Synthesis of CuO/ZnWO4 Heterojunction Structure for H2S Gas Sensor with Ultra-High Response Value at Room Temperature
by Yuhang Zhai, Lianxu Lv and Jiajie Fan
Processes 2025, 13(9), 2727; https://doi.org/10.3390/pr13092727 - 26 Aug 2025
Viewed by 530
Abstract
H2S detection is critical for personal and industrial safety. Generally, metal oxide-based H2S sensors exhibit no response at room temperature (RT). In this study, CuO/ZnWO4 (C-ZWO) nanocomposites were prepared via a two-step hydrothermal process and applied to RT [...] Read more.
H2S detection is critical for personal and industrial safety. Generally, metal oxide-based H2S sensors exhibit no response at room temperature (RT). In this study, CuO/ZnWO4 (C-ZWO) nanocomposites were prepared via a two-step hydrothermal process and applied to RT H2S sensing. The results show that the C-ZWO sensors exhibit an elevated response value at RT and balanced gas-sensing properties at 100 °C. Significantly, the response value of a 10% C-ZWO sensor to 25 ppm of H2S at RT is 651.6 with a response time of 78 s, which is 310.3 times that of the ZnWO4 sensor (2.1). The systemic characterization results suggest that the enhanced RT H2S-sensing properties are ascribed to the synergistic effects of the growth-specific surface area and oxygen vacancy occupancy, the enhanced oxygen reduction ability, and the formation of the p–n heterojunction structure between CuO and ZnWO4. The C-ZWO nanocomposites possess added active sites for H2S adsorption and dissociation, with the p–n heterojunction giving rise to higher electrical resistance, and thus, the follow-up produces a high response value even at RT. Full article
(This article belongs to the Special Issue Green Photocatalysis for a Sustainable Future)
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33 pages, 5718 KB  
Article
Progressive Water Deficit Impairs Soybean Growth, Alters Metabolic Profiles, and Decreases Photosynthetic Efficiency
by Renan Falcioni, Caio Almeida de Oliveira, Nicole Ghinzelli Vedana, Weslei Augusto Mendonça, João Vitor Ferreira Gonçalves, Daiane de Fatima da Silva Haubert, Dheynne Heyre Silva de Matos, Amanda Silveira Reis, Werner Camargos Antunes, Luis Guilherme Teixeira Crusiol, Rubson Natal Ribeiro Sibaldelli, Alexandre Lima Nepomuceno, Norman Neumaier, José Renato Bouças Farias, Renato Herrig Furlanetto, José Alexandre Melo Demattê and Marcos Rafael Nanni
Plants 2025, 14(17), 2615; https://doi.org/10.3390/plants14172615 - 22 Aug 2025
Cited by 1 | Viewed by 723
Abstract
Soybean (Glycine max (L.) Merrill) is highly sensitive to water deficit, particularly during the vegetative phase, when morphological and metabolic plasticity support continued growth and photosynthetic efficiency. We applied eleven water regimes, from full irrigation (W100) to total water withholding (W0), to [...] Read more.
Soybean (Glycine max (L.) Merrill) is highly sensitive to water deficit, particularly during the vegetative phase, when morphological and metabolic plasticity support continued growth and photosynthetic efficiency. We applied eleven water regimes, from full irrigation (W100) to total water withholding (W0), to plants grown under controlled conditions. After 14 days, we quantified morphophysiological, biochemical, leaf optical, gas exchange, and chlorophyll a fluorescence traits. Drought induces significant reductions in leaf area, biomass, pigment pools, and photosynthetic rates (A, gs, ΦPSII) while increasing the levels of oxidative stress markers (electrolyte leakage, ROS) and proline accumulation. OJIP transients and JIP test metrics revealed reduced electron-transport efficiency and increased energy dissipation for many parameters under severe stress. Principal component analysis (PCA) clearly separated those treatments. PC1 captured growth and water status variation, whereas PC2 reflected photoprotective adjustments. These data show that progressive drought limits carbon assimilation via coordinated diffusive and biochemical constraints and that the accumulation of proline, phenolics, and lignin is associated with osmotic adjustment, antioxidant buffering, and cell wall reinforcement under stress. The combined use of hyperspectral sensors, gas exchange, chlorophyll fluorescence, and multivariate analyses for phenotyping offers a rapid, nondestructive diagnostic tool for assessing drought severity and the possibility of selecting drought-resistant genotypes and phenotypes in a changing stress environment. Full article
(This article belongs to the Special Issue Plant Challenges in Response to Salt and Water Stress)
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20 pages, 3199 KB  
Article
The Application of a Simple Synthesis Process to Obtain Trirutile-Type Cobalt Antimonate Powders and the Study of Their Electrical Properties in Propane Atmospheres for Use in Gas Sensors
by Lucía Ivonne Juárez Amador, Héctor Guillén Bonilla, Alex Guillén Bonilla, José Trinidad Guillén Bonilla, Verónica María Rodríguez Betancourtt, Jorge Alberto Ramírez Ortega, Antonio Casillas Zamora and Emilio Huizar Padilla
Coatings 2025, 15(8), 952; https://doi.org/10.3390/coatings15080952 - 14 Aug 2025
Viewed by 660
Abstract
The dynamic response in propane atmospheres at different voltages was investigated for samples made from powders of the semiconductor oxide CoSb2O6 synthesized using the microwave-assisted colloidal method. Powders of the compound calcined at 700 °C were studied with X-ray diffraction, [...] Read more.
The dynamic response in propane atmospheres at different voltages was investigated for samples made from powders of the semiconductor oxide CoSb2O6 synthesized using the microwave-assisted colloidal method. Powders of the compound calcined at 700 °C were studied with X-ray diffraction, confirming the CoSb2O6 crystalline phase. The microstructural characteristics of the oxide were analyzed using scanning and transmission electron microscopy (SEM/TEM), revealing a high abundance of nanorods, nanoplates, and irregular nanoparticles. These nanoparticles have an average size of ~21 nm. Using UV-Vis, absorption bands associated with the electronic transitions of the CoSb2O6’s characteristic bonds were identified, which yielded a bandgap value of ~1.8 eV. Raman spectroscopy identified vibrational bands corresponding to the oxide’s Sb–O and Co–O bonds. Dynamic sensing tests at 300 °C confirmed the material’s p-type semiconductor behavior, showing an increase in resistance upon exposure to propane. Critically, these tests revealed that the sensor’s baseline resistance and overall response are tunable by the applied voltage (1–12 V), with the highest sensitivity observed at the lowest voltages. This establishes a clear relationship between the electrical operating parameters and the sensing performance. The samples exhibited good operational stability, capacity, and efficiency, along with short response and recovery times. Extra-dry air (1500 cm3/min) was used as the carrier gas to stabilize the films’ surfaces during propane detection. These findings lead us to conclude that the CoSb2O6 could serve as an excellent gas detector. Full article
(This article belongs to the Special Issue Thin Films and Nanostructures Deposition Techniques)
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15 pages, 7541 KB  
Article
Improving the Selectivity of a Catalytic Film/Gas-Sensitive Film Laminated Metal Oxide Semiconductor Sensor for Mustard Using Temperature Dynamic Modulation
by Yelin Qi, Ting Liang, Wen Yang, Tengbo Ma, Siyue Zhao and Yadong Liu
Nanomaterials 2025, 15(16), 1232; https://doi.org/10.3390/nano15161232 - 12 Aug 2025
Viewed by 384
Abstract
The poor selectivity of metal oxide semiconductor sensors is a major constraint to their application in the detection of chemical warfare agents. We prepared a (Pt+Pd+Rh)@Al2O3/(Pt+Rh)-WO3 sensor by using (Pt+Pd+Rh)@Al2O3 as a catalytic film material [...] Read more.
The poor selectivity of metal oxide semiconductor sensors is a major constraint to their application in the detection of chemical warfare agents. We prepared a (Pt+Pd+Rh)@Al2O3/(Pt+Rh)-WO3 sensor by using (Pt+Pd+Rh)@Al2O3 as a catalytic film material and (Pt+Rh)-WO3 as a gas-sensitive film material. Using temperature dynamic modulation, the (Pt+Pd+Rh)@Al2O3/(Pt+Rh)-WO3 sensor was realised to improve the selectivity for mustard. Due to the catalytic effect of the (Pt+Pd+Rh)@Al2O3 catalytic film on mustard, mustard was able to be catalytically generated into mustard sulphoxide after passing through the (Pt+Pd+Rh)@Al2O3 catalytic film. Under a certain temperature dynamic modulation, the mustard concentration on the surface of the (Pt+Rh)-WO3 gas-sensitive film showed an increase and then a decrease. Since the resistance response of the (Pt+Rh)-WO3 gas-sensitive film to mustard was much higher than that of mustard sulphoxide, the change in the resistance of the (Pt+Rh)-WO3 gas-sensitive film was mainly determined by the change in the concentration of mustard, which led to the peak signal in the curve of its resistance response to mustard. The experimental results showed that the (Pt+Pd+Rh)@Al2O3/(Pt+Rh)-WO3 sensor had peak signals in the resistance response to mustard only, and not in the resistance response to 12 interfering gases, such as carbon monoxide. Full article
(This article belongs to the Special Issue Advanced Low-Dimensional Materials for Sensing Applications)
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20 pages, 2235 KB  
Review
Resistive-Based Nanostructured CeO2 Gas Sensors: A Review
by Mahmoud Torkamani Cheriani, Ali Mirzaei and Jae-Hun Kim
Chemosensors 2025, 13(8), 298; https://doi.org/10.3390/chemosensors13080298 - 9 Aug 2025
Viewed by 744
Abstract
Air pollution and the emission of toxic gases represent a critical global concern, posing significant threats to human health and environmental stability. Resistive gas sensors are widely employed to detect toxic gases, owing to their cost-effectiveness, high stability, sensitivity, and swift dynamics. Among [...] Read more.
Air pollution and the emission of toxic gases represent a critical global concern, posing significant threats to human health and environmental stability. Resistive gas sensors are widely employed to detect toxic gases, owing to their cost-effectiveness, high stability, sensitivity, and swift dynamics. Among various sensing materials, comparatively less attention has been paid to CeO2 despite its good catalytic activity and high stability. In this review paper, we are focusing on CeO2 gas sensors in pristine, doped, decorated, and composite forms. Using numerous examples, we have shown the great potential of CeO2 for gas sensing. The main features of CeO2 as a gas sensor include excellent environmental stability, the abundance of oxygen vacancies, high mechanical strength, cost-effectiveness, and good catalytic activity. However, low electrical conductivity is the main shortage of CeO2 as a gas sensor. With a high emphasis on the sensing mechanism, we believe that this review paper is highly useful for researchers working in this field. Full article
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13 pages, 1717 KB  
Article
High-Performance Hydrogen Gas Sensor Based on Pd-Doped MoS2/Si Heterojunction
by Enyu Ma, Zihao Xu, Ankai Sun, Shuo Yang and Jianyu Jiang
Sensors 2025, 25(15), 4753; https://doi.org/10.3390/s25154753 - 1 Aug 2025
Viewed by 763
Abstract
High-performance hydrogen gas sensors have gained considerable interest for their crucial function in reducing H2 explosion risk. Although MoS2 has good potential for chemical sensing, its application in hydrogen detection at room temperature is limited by slow response and incomplete recovery. [...] Read more.
High-performance hydrogen gas sensors have gained considerable interest for their crucial function in reducing H2 explosion risk. Although MoS2 has good potential for chemical sensing, its application in hydrogen detection at room temperature is limited by slow response and incomplete recovery. In this work, Pd-doped MoS2 thin films are deposited on a Si substrate, forming Pd-doped MoS2/Si heterojunctions via magnetron co-sputtering. The incorporation of Pd nanoparticles significantly enhances the catalytic activity for hydrogen adsorption and facilitates more efficient electron transfer. Owing to its distinct structural characteristics and sharp interface properties, the fabricated Pd-doped MoS2/Si heterojunction device exhibits excellent H2 sensing performance under room temperature conditions. The gas sensor device achieves an impressive sensing response of ~6.4 × 103% under 10,000 ppm H2 concentration, representing a 110% improvement compared to pristine MoS2. Furthermore, the fabricated heterojunction device demonstrates rapid response and recovery times (24.6/12.2 s), excellent repeatability, strong humidity resistance, and a ppb-level detection limit. These results demonstrate the promising application prospects of Pd-doped MoS2/Si heterojunctions in the development of advanced gas sensing devices. Full article
(This article belongs to the Special Issue 2D Materials for Advanced Sensing Technology)
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12 pages, 2303 KB  
Article
Fabrication of Low-Power Consumption Hydrogen Sensor Based on TiOx/Pt Nanocontacts via Local Atom Migration
by Yasuhisa Naitoh, Hisashi Shima and Hiroyuki Akinaga
Nanomaterials 2025, 15(15), 1154; https://doi.org/10.3390/nano15151154 - 25 Jul 2025
Viewed by 478
Abstract
Hydrogen (H2) gas sensors are essential for detecting leaks and ensuring safety, thereby supporting the broader adoption of hydrogen energy. The performance of H2 sensors has been shown to be improved by the incorporation of TiO2 nanostructures. The key [...] Read more.
Hydrogen (H2) gas sensors are essential for detecting leaks and ensuring safety, thereby supporting the broader adoption of hydrogen energy. The performance of H2 sensors has been shown to be improved by the incorporation of TiO2 nanostructures. The key findings are summarized as follows: (1) Resistive random-access memory (ReRAM) technology was used to fabricate extremely compact H2 sensors via various forming techniques, and substantial sensor performance enhancement was investigated. (2) A nanocontact composed of titanium oxide (TiOx)/platinum (Pt) was subjected to various forming operations to establish a Schottky junction with a nanogap structure on a tantalum oxide (Ta2O5) layer, and its properties were assessed. (3) When the Pt electrode was on the positive side during the forming operation used for ReRAM technology, a Pt nanopillar structure was produced. By contrast, when the forming operation was conducted with a positive bias on the TiOx side, a mixed oxide film of Ta and Ti was produced, which indicates local Ta doping into the TiOx. A sensor response of over 1000 times was achieved at a minimal voltage of 1 mV at room temperature. (4) This sensor fabrication technology based on the forming operation is promising for the development of low-power consumption sensors. Full article
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13 pages, 2020 KB  
Article
Micro-Gas Flow Sensor Utilizing Surface Network Density Regulation for Humidity-Modulated Ion Transport
by Chuanjie Liu and Zhihong Liu
Gels 2025, 11(8), 570; https://doi.org/10.3390/gels11080570 - 23 Jul 2025
Viewed by 445
Abstract
As a bridge for human–machine interaction, the performance improvement of sensors relies on the in-depth understanding of ion transport mechanisms. This study focuses on the surface effect of resistive gel sensors and designs a polyacrylic acid/ferric ion hydrogel (PAA/Fe3+) gas flow [...] Read more.
As a bridge for human–machine interaction, the performance improvement of sensors relies on the in-depth understanding of ion transport mechanisms. This study focuses on the surface effect of resistive gel sensors and designs a polyacrylic acid/ferric ion hydrogel (PAA/Fe3+) gas flow sensor. Prepared by one-pot polymerization, PAA/Fe3+ forms a three-dimensional network through the entanglement of crosslinked and uncrosslinked PAA chains, where the coordination between Fe3+ and carboxyl groups endows the material with excellent mechanical properties (tensile strength of 80 kPa and elongation at break of 1100%). Experiments show that when a gas flow acts on the hydrogel surface, changes in surface humidity alter the density of the network structure, thereby regulating ion migration rates: the network loosens to promote ion transport during water absorption, while it tightens to hinder transport during water loss. This mechanism enables the sensor to exhibit significant resistance responses (ΔR/R0 up to 0.55) to gentle breezes (0–13 m/s), with a response time of approximately 166 ms and a sensitivity 40 times higher than that of bulk deformation. The surface ion transport model proposed in this study provides a new strategy for ultrasensitive gas flow sensing, showing potential application values in intelligent robotics, electronic skin, and other fields. Full article
(This article belongs to the Special Issue Polymer Gels for Sensor Applications)
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81 pages, 10454 KB  
Review
Glancing Angle Deposition in Gas Sensing: Bridging Morphological Innovations and Sensor Performances
by Shivam Singh, Kenneth Christopher Stiwinter, Jitendra Pratap Singh and Yiping Zhao
Nanomaterials 2025, 15(14), 1136; https://doi.org/10.3390/nano15141136 - 21 Jul 2025
Cited by 1 | Viewed by 1149
Abstract
Glancing Angle Deposition (GLAD) has emerged as a versatile and powerful nanofabrication technique for developing next-generation gas sensors by enabling precise control over nanostructure geometry, porosity, and material composition. Through dynamic substrate tilting and rotation, GLAD facilitates the fabrication of highly porous, anisotropic [...] Read more.
Glancing Angle Deposition (GLAD) has emerged as a versatile and powerful nanofabrication technique for developing next-generation gas sensors by enabling precise control over nanostructure geometry, porosity, and material composition. Through dynamic substrate tilting and rotation, GLAD facilitates the fabrication of highly porous, anisotropic nanostructures, such as aligned, tilted, zigzag, helical, and multilayered nanorods, with tunable surface area and diffusion pathways optimized for gas detection. This review provides a comprehensive synthesis of recent advances in GLAD-based gas sensor design, focusing on how structural engineering and material integration converge to enhance sensor performance. Key materials strategies include the construction of heterojunctions and core–shell architectures, controlled doping, and nanoparticle decoration using noble metals or metal oxides to amplify charge transfer, catalytic activity, and redox responsiveness. GLAD-fabricated nanostructures have been effectively deployed across multiple gas sensing modalities, including resistive, capacitive, piezoelectric, and optical platforms, where their high aspect ratios, tailored porosity, and defect-rich surfaces facilitate enhanced gas adsorption kinetics and efficient signal transduction. These devices exhibit high sensitivity and selectivity toward a range of analytes, including NO2, CO, H2S, and volatile organic compounds (VOCs), with detection limits often reaching the parts-per-billion level. Emerging innovations, such as photo-assisted sensing and integration with artificial intelligence for data analysis and pattern recognition, further extend the capabilities of GLAD-based systems for multifunctional, real-time, and adaptive sensing. Finally, current challenges and future research directions are discussed, emphasizing the promise of GLAD as a scalable platform for next-generation gas sensing technologies. Full article
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